Construction of an in-situ radiation test system for semiconductor materials and devices based on a 4.5 MV accelerator

Abstract

Real-time monitoring the electrical property of semiconductor materials and devices under irradiation can minimize the impact of room temperature annealing and obtain data conveniently. In this work, an in-situ radiation test system was constructed based on a 4.5 MV accelerator and used to measure the electrical property of 4H-SiC under 2 MeV protons irradiation. The results show that the resistance of 4H-SiC increases when the ion fluence increases from 6.37×1013 cm−2 to 8.16×1015 cm−2, showing the system is a powerful tool to investigate the in-situ change of the resistance under MeV ion irradiation.