1992 Proceedings 42nd Electronic Components & Technology Conference最新文献

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A novel 850-nm surface-emitting LED with 131-nm spectral width 一种具有131nm光谱宽度的850 nm表面发光LED
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204239
H.K. Nettelbladt, M. Widman
{"title":"A novel 850-nm surface-emitting LED with 131-nm spectral width","authors":"H.K. Nettelbladt, M. Widman","doi":"10.1109/ECTC.1992.204239","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204239","url":null,"abstract":"Large bandwidth infrared light emitting diodes (LEDs) were fabricated by liquid-phase epitaxy. The spectral bandwidth is a maximum of 131 nm at room temperature (754-885 nm). Normally, the bandwidth of a 850-nm LED is 60 nm. The mean spectral bandwidth of the new LEDs is 110 nm at room temperature, 99 nm at -55 degrees C, and 120 nm at +125 degrees C. The optical power coupled through a 100-m 100- mu m-core-diameter optical fiber with NA=0.29 is typically -3 dBm. The power decrease by change of temperature is 3%/ degrees C. Initial results from an accelerated endurance test are presented. The characteristics of the new large bandwidth LED show good stability over a temperature range of -55 to +125 degrees C, which makes it suitable for wavelength division multiplex applications in aircraft and space systems.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"381 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124751944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel TAB inner lead bonding technology eliminating bump formation process 新颖的TAB内引线粘合技术,消除了凹凸形成过程
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204310
Y. Otsuka, H. Kaneko, J. Sasaki, M. Itoh, K. Takekawa, A. Yoshigai, M. Urushima
{"title":"Novel TAB inner lead bonding technology eliminating bump formation process","authors":"Y. Otsuka, H. Kaneko, J. Sasaki, M. Itoh, K. Takekawa, A. Yoshigai, M. Urushima","doi":"10.1109/ECTC.1992.204310","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204310","url":null,"abstract":"A novel tape automated bonding (TAB) inner lead bonding (ILB) technology, wherein an individual inner lead can be directly bonded with an individual bonding pad for ICs without using any gold bumps, was developed. The proposed ILB technology makes it possible to attain high density packaging as well as highly reliable connections. In addition, packaging costs can be drastically reduced, by eliminating the bump formation process. The key to successful direct connections, practical bond strength without causing any damage in the pad structure, is producing uniform vertical stress distribution on the bonding area during the bonding process. A newly developed bonding process and a specifically designed bond tool make it possible to produce uniform vertical stress distribution. A bondability study, involving pull tests on the bonded tape leads and high-temperature storage tests, was carried out. The results showed the viability of the proposed ILB technology as a reliable connection process. Basic bond tests for high density packaging were also attempted. It was ascertained that this technology has a great potential for fine pitch connections.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125593352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Influence of pre-synthetic spinels on electrical properties of ZnO varistors 预合成尖晶石对ZnO压敏电阻电性能的影响
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204225
Z. Qing, M. Zhongyan
{"title":"Influence of pre-synthetic spinels on electrical properties of ZnO varistors","authors":"Z. Qing, M. Zhongyan","doi":"10.1109/ECTC.1992.204225","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204225","url":null,"abstract":"A method of preparation of ZnO varistors, presynthetic spinels, was explored and its influence on electrical properties was examined. Microstructural features and distribution characteristics of the spinel phase in ZnO varistors were also investigated by electron probe microanalysis and TEM (transmission electron microscopy). The electrical properties of two types of samples are compared and discussed in relation to the spinel characteristics. The procedure of presynthetic spinels results in a drop of breakdown voltage of about 50%, a one-order decrease of leakage current, and a significant improvement of thermal stability. The I-V characteristics of ZnO varistors are influenced not only by the Bi/sub 2/O/sub 3/ intergranular phase, but also by the distribution characteristics of the spinel phases, which can be modified considerably by varying the technological procedure.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134538178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New twist to water cleaning guarantees reliability 新的扭转水清洗保证可靠性
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204184
J. Ameen
{"title":"New twist to water cleaning guarantees reliability","authors":"J. Ameen","doi":"10.1109/ECTC.1992.204184","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204184","url":null,"abstract":"The author previously showed how different types of testers can be used to monitor wet processes and determine the amount of ionic residues being left on a printed circuit. In the present work, it is shown how this type of technology can be upscaled so that substrates, cards, and boards can be cleaned to levels cleaner than that required of integrated circuits using mostly water. Cleaning circuits beyond the 18.3-M Omega resistivity endpoint of water is easily accomplished producing reliable circuits, which can easily pass insulation resistance testing. The units considered are characterized by relatively low cost, low pollution, and low water usage. These units are particularly desirable where pollution criteria and water usage are severely restricted.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130929071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Relative effectiveness of thermal cycling versus burn-in: a case study 热循环与老化的相对有效性:一个案例研究
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204205
F. Lovasco, K. Lo
{"title":"Relative effectiveness of thermal cycling versus burn-in: a case study","authors":"F. Lovasco, K. Lo","doi":"10.1109/ECTC.1992.204205","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204205","url":null,"abstract":"In environmental stress testing (EST) programs for various types of communications equipment, two experiments were conducted to gauge the relative effectiveness of thermal cycling and burn-in for a typical communications system which uses optical transmission. The first EST regimen was a series of thermal cycles (A) followed by an extended period of burn-in (B). This order was reversed in the second EST regimen which consisted of (B) followed by (A). By comparing the failure distributions in time for the AB and BA experiments, one can discern the relative effectiveness of the thermal cycling and burn-in for stimulating failures. The results clearly show that thermal cycling reveals important failure modes which are not effectively precipitated by burn-in alone. Some of these failures occur as intermittent failures during the temperature transients. Moreover, thermal cycling does tend to reveal many of the same failure modes precipitated by burn-in because the thermocyclic test regimen inherently involves successive time intervals at elevated temperature. On the other hand, the data suggest that time-at-temperature (burn-in) failures are also involved. Therefore, a balanced test regimen of thermal cycling and burn-in seems advisable.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131103637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Dielectric and piezoelectric properties of PZT ceramics doped with 4PbO-B/sub 2/O/sub 3/ 掺4PbO-B/sub 2/O/sub 3/ PZT陶瓷介电和压电性能
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204222
Long Wu, Chung-Heuy Wang
{"title":"Dielectric and piezoelectric properties of PZT ceramics doped with 4PbO-B/sub 2/O/sub 3/","authors":"Long Wu, Chung-Heuy Wang","doi":"10.1109/ECTC.1992.204222","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204222","url":null,"abstract":"Piezoelectric materials consisting of Pb(Zr/sub x/Ti/sub 1-x/) O/sub 3/ (x=0.52 and 0.94) and glass powder 4PbO-B/sub 2/O/sub 3/ were studied. It is shown that, if a small amount of 4PbO-B/sub 2/O/sub 3/ glass powder is added to the PZT system, the sintering temperature can be reduced and the dielectric and piezoelectric properties will be enhanced. For PZT (52/48) doped with 0.2 wt.% 4PbO-B/sub 2/O/sub 3/ and sintered at 1150 degrees C for 30 h, the planar coupling factor k/sub p/ is higher than that of plain PZT (52/48). For PZT (94/6) doped with 0.5 wt.% 4PbO-B/sub 2/O/sub 3/, a planar coupling factor and a dielectric constant equal to 0.16 and 330, respectively, can be attained with sintering at 950 degrees C for 30 h.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"99 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130236724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A computer-aided, spatially-selective protection technique for multichip module and chip-on-board devices 一种用于多芯片模块和片上器件的计算机辅助、空间选择性保护技术
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204335
J. Mann
{"title":"A computer-aided, spatially-selective protection technique for multichip module and chip-on-board devices","authors":"J. Mann","doi":"10.1109/ECTC.1992.204335","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204335","url":null,"abstract":"The use of a precise computer-controlled dispensing system to fashion medium-modulus, very thin silicone dams around the interconnection area of IC devices is described. The computer-controlled capability greatly facilitates changing circuit layouts and designs. An inner dam confines the gel to a desired area and to a sufficient height above the ICs. An outer dam confines the hard shell encapsulant while creating a structural wall of required width and height, permitting overcoating of the inner gel area. The flexible placement of dams eliminates the need for expensive molds and larger-cavity molded dams that are not optimum for the configuration. In addition, some data are presented to determine some of the parameters needed to provide adequate device protection. This technique of flexible dam positioning permits telecommunication circuit prototypes to be fabricated, such as a high-data-rate (155-Mb/s) circuit, on a single unit basis. This technique could find important applications in rapid prototyping.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114316441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of materials and processing on the reliability of silver-glass die attach pastes 材料及工艺对银玻璃模贴料可靠性的影响
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204208
S. M. Dershem, C. E. Hoge
{"title":"Effects of materials and processing on the reliability of silver-glass die attach pastes","authors":"S. M. Dershem, C. E. Hoge","doi":"10.1109/ECTC.1992.204208","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204208","url":null,"abstract":"The benchmark tests for goodness of silver-glass pastes have been the postfire adhesion and residual moisture present in package cavity head-space. However, as die sizes have increased in edge dimensions and silicon design rules have progressed below 1 mu m, processing and evaluation criteria have become more stringent. Evaluation criteria have begun to focus more heavily on the mechanical behavior of the die bond joint. Temperature cycling from -65 degrees to +150 degrees has become a standard procedure for evaluation of silver-glass die bond materials. The percent degradation in tensile adhesion immediately following die attach and after 500 or 1000 cycle tests has become an important criterion for determination of paste robustness. Experimental results have shown that the composition of the glassy phase and the ratio of silver to glass affect the durability of the die bond zone. Several glass compositions were investigated to determine optimum firing conditions and resistance to both mechanical and chemical (ambient gas) degradation. The effects of various metal-to-glass ratios were studied. Optimum ratios other than the traditional 4:1 by weight ratio were identified to give superior performance from the standpoints of chemical and mechanical durability.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114706108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Mechanical behavior and reliability of solder joint interconnections in thermally matched assemblies 热匹配组件中焊点互连的机械性能和可靠性
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204260
E. Suhir
{"title":"Mechanical behavior and reliability of solder joint interconnections in thermally matched assemblies","authors":"E. Suhir","doi":"10.1109/ECTC.1992.204260","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204260","url":null,"abstract":"It is pointed out that matched thermal expansion (contraction) between soldered components should result in a more reliable solder joint interconnection. The author investigates, both theoretically and experimentally, the mechanical behavior and reliability of such interconnections in application to silicon-on-silicon flip-chip technology. The study is limited to the case of the uniform change in temperature (thermal cycling conditions), so that the stresses and strains in the solder joints are caused exclusively by the mismatch between the solder material and silicon. In the theoretical analysis the author considers an axially symmetric elastic problem for a finite circular cylinder whose end planes are subjected to identical radial deformations. The solution obtained is used to evaluate the magnitude and the distribution of the low-temperature strains and stresses in solder joints in a flip-chip package design and to assess the effect of the diameter-to-height ratio on the strains and stresses. The main objectives of the experimental investigations were to identify the potential reliability problems, as well as to accumulate reliability statistics. It is concluded that application of thermally matched assemblies results in a rather reliable interconnection, although it should be be regarded as a panacea for mechanical problems.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"180 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131780295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
High-leadcount, single- and multi-metal-layer TAB: design considerations 高引线数,单层和多层金属标签:设计考虑因素
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204234
K. Mabin
{"title":"High-leadcount, single- and multi-metal-layer TAB: design considerations","authors":"K. Mabin","doi":"10.1109/ECTC.1992.204234","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204234","url":null,"abstract":"It is suggested that high-leadcount, single- and multi-metal-layer TAB (tape automated bonding) can offer a viable, longer-term power distribution alternative. High-leadcount, single-metal-layer TAB will soon provide in excess of 1000 I/O at an inner lead bond pitch of 0.002\". The overall size of the TAB package, or its outer lead bond (OLB) footprint, can be minimized by reducing a 2* fanout to zero-fanout. This shortens the line length, which improves the electrical performance characteristics of the device, provides drastic reductions in inductance, and takes up much less area. As board-mounted device speeds exceed 50 MHz, critical parameters can best be optimized by the use of multi-metal-layer TAB. The addition of a ground plane in close proximity to the signal plane also allows for reduced inductance, thus lowering simultaneous switching noise. The three-metal-layer design approach offers even lower simultaneous switching noise by further reducing inductance. Area array TAB, which uses a three-metal-layer construction, offers a more powerful interconnection solution. This approach enables design engineers to locate power and ground planes directly over the active area of the die.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133738794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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