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1992 Proceedings 42nd Electronic Components & Technology Conference最新文献

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On the role of adhesion in plastic packaged chips under thermal cycling stress 热循环应力作用下塑料封装芯片中的粘附作用
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204316
P. Alpern, O. Selig, R. Tilgner
{"title":"On the role of adhesion in plastic packaged chips under thermal cycling stress","authors":"P. Alpern, O. Selig, R. Tilgner","doi":"10.1109/ECTC.1992.204316","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204316","url":null,"abstract":"Scanning acoustic microscopy (SAM) was used to evaluate the degradation of adhesion on a blown up sample, i.e. a Si-beam coated only on the passivated side with the molding compound under consideration. Such a bending beam sample offers two advantages for evaluation by SAM over conventionally plastic mounted chips: (1) for the acoustic waves the sample is flat, which helps to eliminate or reduce the influence of chip topography, and (2) the bending stress tends to open any partial delamination, giving better defined conditions for SAM examination. From the SAM analysis of the bending beam sample a very low stress molding compound, which had caused an unexpectedly high failure rate, was found to show poor adhesion after thermal cycling in delamination near the corners of the sample. No delaminations could be observed by means of SAM at molded product test chips, however. Thus, it is concluded that poor adhesion of the molding compound which caused delaminations in the bending beam's corner regions resulted in an increased chip failure rate.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117142791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Role of design factors for improving moisture performance of plastic packages 设计因素对提高塑料包装防潮性能的作用
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204319
S. Altimari, S. Golwalkar, P. Boysan, R. Foehringer
{"title":"Role of design factors for improving moisture performance of plastic packages","authors":"S. Altimari, S. Golwalkar, P. Boysan, R. Foehringer","doi":"10.1109/ECTC.1992.204319","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204319","url":null,"abstract":"The authors investigated both the chemical and physical nature of mold compound adhesion to the leadframe with the 32 lead SOP and 32 lead TSOP as the primary vehicles. The choice of molding compound is shown to be, a significant factor in enhancing the performance of plastic packages with respect to package cracking. The molding compound primarily determines the chemical adhesion between the leadframe and the molding compound, which prevents the initiation of delamination which eventually can result in package cracking. In terms of improving the mechanical adhesion between the molding compound and the leadframe, round and square shaped dimples if properly spaced seem to provide adequate mechanical adhesion to prevent delamination as well as package cracking in normal surface mount use conditions.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126184957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Wire bond development for high-pincount surface-mount 用于高针脚数表面贴装的线键发展
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204312
B. Shu
{"title":"Wire bond development for high-pincount surface-mount","authors":"B. Shu","doi":"10.1109/ECTC.1992.204312","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204312","url":null,"abstract":"The continuous miniaturization of computers necessitates the use of new high pin count plastic packages such as TQFP (thin quad flat pack). These new package types, with 1.4-, 1.0-, or 0.8-mm plastic package body thickness, have very limited space for bond wire, specifically in the loop height dimension. This restriction imposes a challenge to the traditional wire bond technology, especially when long wire is needed for small die. The author reviews the constraints a thin plastic package imposes on wire bonding, and presents a statistical design of an experiment based on a response surface methodology to characterize wire loop profile control. Based on the regression equations generated, a mathematical model is established to guide the development of a predetermined loop profile suitable for thin plastic package assembly. The effects of major bonding parameters, such as wire length, kink-height, reverse loop, loop factor, bonding speeds, and wire tension, and their interactions on loop profile are analyzed.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123706787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Signal propagation over perforated reference planes in stripline interconnect structures 带状线互连结构中信号在穿孔参考平面上的传播
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204283
R. Senthinathan, W. E. Pence, N. Raver, J. Prince
{"title":"Signal propagation over perforated reference planes in stripline interconnect structures","authors":"R. Senthinathan, W. E. Pence, N. Raver, J. Prince","doi":"10.1109/ECTC.1992.204283","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204283","url":null,"abstract":"An experimental and theoretical investigation of signal propagation in high-speed interconnect structures containing perforations in the reference planes is presented. Discontinuities of this type occur in many practical package designs and must be modeled correctly (in the time-domain) in order to account for the additional noise which is introduced on the signal line. To establish valid modeling techniques for this class of interconnects, measurements are made on two custom-designed test structures and compared with results obtained from simulation. The effect of the reference plane discontinuity is studied as a function of signal conductor height for a standard stripline configuration. Two- and three-dimensional parasitic extraction tools, along with full-wave electromagnetic solvers, are used to calculate the discontinuity element values. For both test structures, good correlation is obtained between measurements and modeling results. The value of different modeling approaches is discussed, and design guidelines for practical interconnect structures are proposed.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116230810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High-density zero insertion force microcoaxial cable interconnection technology 高密度零插入力微同轴电缆互连技术
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204218
R. Rothenberger, R. Mroczkowski
{"title":"High-density zero insertion force microcoaxial cable interconnection technology","authors":"R. Rothenberger, R. Mroczkowski","doi":"10.1109/ECTC.1992.204218","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204218","url":null,"abstract":"A novel high-density zero-insertion-force microcoaxial cable interconnection method has been developed. The system consists of a microferrule to connect to the served shield wires of each coaxial cable, a modular microstrip style coaxial cable to PWB (printed wiring board) connector with compliant pin technology, a variable geometry PWB separable interface contact distribution, and a fine-pitch interposer contact array to serve as the separable interface. This system has been designed with manufacturing as a key design objective and can be semiautomated with careful attention to detail. Contact density is currently 91 contacts per square inch, including provisions for mounting hardware and support structures. A major advantage of this interconnection approach is that it provides a versatile format for custom cable interconnection platforms to meet individual customer requirements for pin counts and signal/ground ratios.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"232 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122827823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Guidelines for thermal management of multichip modules 多芯片模块热管理指南
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204295
L. Liang, A. Hamzehdoost
{"title":"Guidelines for thermal management of multichip modules","authors":"L. Liang, A. Hamzehdoost","doi":"10.1109/ECTC.1992.204295","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204295","url":null,"abstract":"Thermal issues affecting MCM (multichip module) performance are addressed. The empirical data collected using a test chip, in accordance with SEMI-Standard measurement guidelines, are compared with the numerical values obtained using the finite element analysis software HYBRID THERMAL. Emphasis is placed in a low-cost MCM utilizing PCB (printed circuit board) and ceramic substrates where thermal management is most critical. Among the factors discussed are Si chip size, the distance of the chips from each other, heat spreading resistance throughout the package, substrate material, and thermal vias. The results obtained provide baseline guidelines which are valuable for small systems where low cost is key and thermal management options are limited. They are also useful for high-performance MCM applications, such as silicon-based substrates for high end application.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"2007 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128215639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Direct chip interconnect with adhesive-connector films 直接芯片互连与粘合剂连接膜
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204250
N. Basavanhally, D. D. Chang, B. Cranston, S.G. Seger
{"title":"Direct chip interconnect with adhesive-connector films","authors":"N. Basavanhally, D. D. Chang, B. Cranston, S.G. Seger","doi":"10.1109/ECTC.1992.204250","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204250","url":null,"abstract":"The authors discuss the results of feasibility studies of direct chip interconnect (DCI) using anisotropic conductive polymer material on both flexible and rigid substrates. The concept is to simultaneously attach and electrically interconnect IC chips to circuit traces. When conductors are joined under heat and pressure to form a bond, metallic spheres within the adhesive layer make contact with both conductor surfaces but not each other; hence the anisotropic conductivity. Electrically anisotropic conductive adhesives offer numerous other advantages in the assembly of electronic circuits, including low temperature assembly, fluxless bonding which eliminates the need for cleaning, and low cost. In addition, the anisotropy inherent in these materials makes them excellent candidates for very fine pitch components.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123994496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 31
An overview of elastomeric conductive polymer interconnection materials and their use in MCM technology 综述了弹性导电聚合物互连材料及其在MCM技术中的应用
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204248
J. Fulton, D. D. Chang, J.R. Nis, M. Schmidt
{"title":"An overview of elastomeric conductive polymer interconnection materials and their use in MCM technology","authors":"J. Fulton, D. D. Chang, J.R. Nis, M. Schmidt","doi":"10.1109/ECTC.1992.204248","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204248","url":null,"abstract":"A family of anisotropically conducting metal-filled polymer composites that are representative of ACPF (anisotropically conducting polymer film) has been developed. These composites are collectively referred to as elastomeric conductive polymer interconnection (ECPI) materials. The ECPI materials are metal-polymer composites with conduction isolated to the thin (or Z) direction, as are all ACPF materials. These materials offer unique advantages over more conventional technologies used for module attachment, high density connectors, socketing, and device testing. ECPI materials are well suited to interconnecting pad-grid arrays and, because of their electrical properties and mechanical compliance, they can accommodate short-range surface variations of several mils and transmit high-frequency signals without distortion, and their through-contact resistance is low. In general, ECPI needs only the application of pressure to give interconnection, but a group of design criteria was developed to assure optimal performance. The ECPI structure is discussed, the electrical and mechanical properties of typical ECPI interconnections are described, and design guidelines for using ECPI in connector and testing applications are summarized.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123642442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Steady-state and transient C-V response of a high-voltage nonlinear barium titanate ceramic-disc power-snubber capacitor 高压非线性钛酸钡陶瓷盘功率缓冲电容器的稳态和瞬态C-V响应
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204265
C. Campbell, J. D. van Wyk, M.F.K. Holm, J.J.R. Prinsloo, J. Schoeman
{"title":"Steady-state and transient C-V response of a high-voltage nonlinear barium titanate ceramic-disc power-snubber capacitor","authors":"C. Campbell, J. D. van Wyk, M.F.K. Holm, J.J.R. Prinsloo, J. Schoeman","doi":"10.1109/ECTC.1992.204265","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204265","url":null,"abstract":"Observations are reported on the steady-state and transient capacitance-voltage (C-V) response of barium titanate (BaTiO/sub 3/) nonlinear ceramic-disk capacitors with breakdown voltages above 1500 V, fabricated for use in power electronic dissipative resistance-capacitance-diode (RCD) snubbers to reduce the stored-energy requirement. This includes the in situ C-V snubber performance in a 1000 V bipolar junction transistor switch test circuit. The considerable difference between the room-temperature C-V response in a conventional AC test bridge and that in a novel 1500 V quasi-DC charge/discharge hysteresis test circuit is explained in terms of an equivalent circuit model derived for such nonlinear ceramic-disk capacitors.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114453676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Constitutive relations for tin-based-solder joints 锡基焊点的本构关系
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204257
R. Darveaux, K. Banerji
{"title":"Constitutive relations for tin-based-solder joints","authors":"R. Darveaux, K. Banerji","doi":"10.1109/ECTC.1992.204257","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204257","url":null,"abstract":"The authors present extensive data on 62Sn36Pb2Ag, 60Sn40Pb, 96.5Sn3.5Ag, 97Pb3Sn, and 95Pb5Sn solders. All of the data were collected on actual soldered assemblies to properly account for the effects of grain size and intermetallic compound distribution. Tensile and shear loading were employed in the strain rate range between 10/sup -7/ and 10/sup -1/ s/sup -1/ and temperature range between 25 and 135 degrees C. It is noted that all of the data can be fit to the same general form of constitutive relations, i.e. only the constants depend on the solder alloy. The derived constitutive relations are used to predict solder joint response under thermal cycling. Based on the calculated hysteresis loops, it is apparent that each solder will have a different acceleration factor between field use cycling and accelerated test cycling.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126341977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 467
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