A novel 850-nm surface-emitting LED with 131-nm spectral width

H.K. Nettelbladt, M. Widman
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Abstract

Large bandwidth infrared light emitting diodes (LEDs) were fabricated by liquid-phase epitaxy. The spectral bandwidth is a maximum of 131 nm at room temperature (754-885 nm). Normally, the bandwidth of a 850-nm LED is 60 nm. The mean spectral bandwidth of the new LEDs is 110 nm at room temperature, 99 nm at -55 degrees C, and 120 nm at +125 degrees C. The optical power coupled through a 100-m 100- mu m-core-diameter optical fiber with NA=0.29 is typically -3 dBm. The power decrease by change of temperature is 3%/ degrees C. Initial results from an accelerated endurance test are presented. The characteristics of the new large bandwidth LED show good stability over a temperature range of -55 to +125 degrees C, which makes it suitable for wavelength division multiplex applications in aircraft and space systems.<>
一种具有131nm光谱宽度的850 nm表面发光LED
采用液相外延技术制备了大带宽红外发光二极管。在室温(754-885 nm)下,光谱带宽最大为131 nm。正常情况下,850纳米的LED带宽为60纳米。新led的平均光谱带宽在室温下为110 nm,在-55℃时为99 nm,在+125℃时为120 nm。通过100-m - 100 μ m芯径光纤耦合的光功率通常为-3 dBm,光纤NA=0.29。温度变化使功率降低3%/℃,给出了加速耐久试验的初步结果。新型大带宽LED的特性在-55至+125℃的温度范围内显示出良好的稳定性,这使得它适合于飞机和航天系统中的波分复用应用。
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