Dielectric and piezoelectric properties of PZT ceramics doped with 4PbO-B/sub 2/O/sub 3/

Long Wu, Chung-Heuy Wang
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Abstract

Piezoelectric materials consisting of Pb(Zr/sub x/Ti/sub 1-x/) O/sub 3/ (x=0.52 and 0.94) and glass powder 4PbO-B/sub 2/O/sub 3/ were studied. It is shown that, if a small amount of 4PbO-B/sub 2/O/sub 3/ glass powder is added to the PZT system, the sintering temperature can be reduced and the dielectric and piezoelectric properties will be enhanced. For PZT (52/48) doped with 0.2 wt.% 4PbO-B/sub 2/O/sub 3/ and sintered at 1150 degrees C for 30 h, the planar coupling factor k/sub p/ is higher than that of plain PZT (52/48). For PZT (94/6) doped with 0.5 wt.% 4PbO-B/sub 2/O/sub 3/, a planar coupling factor and a dielectric constant equal to 0.16 and 330, respectively, can be attained with sintering at 950 degrees C for 30 h.<>
掺4PbO-B/sub 2/O/sub 3/ PZT陶瓷介电和压电性能
研究了由Pb(Zr/sub x/Ti/sub 1-x/) O/sub 3/ (x=0.52和0.94)和玻璃粉4PbO-B/sub 2/O/sub 3/组成的压电材料。结果表明,在PZT体系中加入少量的4PbO-B/sub 2/O/sub 3/玻璃粉,可以降低烧结温度,提高PZT的介电和压电性能。对于掺杂0.2 wt.% 4PbO-B/sub 2/O/sub 3/的PZT(52/48),在1150℃下烧结30 h,其平面耦合系数k/sub p/高于普通PZT(52/48)。对于掺杂0.5 wt.% 4PbO-B/sub 2/O/sub 3/的PZT(94/6),在950℃下烧结30 h,可获得平面耦合系数0.16和介电常数330
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