{"title":"掺4PbO-B/sub 2/O/sub 3/ PZT陶瓷介电和压电性能","authors":"Long Wu, Chung-Heuy Wang","doi":"10.1109/ECTC.1992.204222","DOIUrl":null,"url":null,"abstract":"Piezoelectric materials consisting of Pb(Zr/sub x/Ti/sub 1-x/) O/sub 3/ (x=0.52 and 0.94) and glass powder 4PbO-B/sub 2/O/sub 3/ were studied. It is shown that, if a small amount of 4PbO-B/sub 2/O/sub 3/ glass powder is added to the PZT system, the sintering temperature can be reduced and the dielectric and piezoelectric properties will be enhanced. For PZT (52/48) doped with 0.2 wt.% 4PbO-B/sub 2/O/sub 3/ and sintered at 1150 degrees C for 30 h, the planar coupling factor k/sub p/ is higher than that of plain PZT (52/48). For PZT (94/6) doped with 0.5 wt.% 4PbO-B/sub 2/O/sub 3/, a planar coupling factor and a dielectric constant equal to 0.16 and 330, respectively, can be attained with sintering at 950 degrees C for 30 h.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"99 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dielectric and piezoelectric properties of PZT ceramics doped with 4PbO-B/sub 2/O/sub 3/\",\"authors\":\"Long Wu, Chung-Heuy Wang\",\"doi\":\"10.1109/ECTC.1992.204222\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Piezoelectric materials consisting of Pb(Zr/sub x/Ti/sub 1-x/) O/sub 3/ (x=0.52 and 0.94) and glass powder 4PbO-B/sub 2/O/sub 3/ were studied. It is shown that, if a small amount of 4PbO-B/sub 2/O/sub 3/ glass powder is added to the PZT system, the sintering temperature can be reduced and the dielectric and piezoelectric properties will be enhanced. For PZT (52/48) doped with 0.2 wt.% 4PbO-B/sub 2/O/sub 3/ and sintered at 1150 degrees C for 30 h, the planar coupling factor k/sub p/ is higher than that of plain PZT (52/48). For PZT (94/6) doped with 0.5 wt.% 4PbO-B/sub 2/O/sub 3/, a planar coupling factor and a dielectric constant equal to 0.16 and 330, respectively, can be attained with sintering at 950 degrees C for 30 h.<<ETX>>\",\"PeriodicalId\":125270,\"journal\":{\"name\":\"1992 Proceedings 42nd Electronic Components & Technology Conference\",\"volume\":\"99 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-05-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 Proceedings 42nd Electronic Components & Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC.1992.204222\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 Proceedings 42nd Electronic Components & Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.1992.204222","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dielectric and piezoelectric properties of PZT ceramics doped with 4PbO-B/sub 2/O/sub 3/
Piezoelectric materials consisting of Pb(Zr/sub x/Ti/sub 1-x/) O/sub 3/ (x=0.52 and 0.94) and glass powder 4PbO-B/sub 2/O/sub 3/ were studied. It is shown that, if a small amount of 4PbO-B/sub 2/O/sub 3/ glass powder is added to the PZT system, the sintering temperature can be reduced and the dielectric and piezoelectric properties will be enhanced. For PZT (52/48) doped with 0.2 wt.% 4PbO-B/sub 2/O/sub 3/ and sintered at 1150 degrees C for 30 h, the planar coupling factor k/sub p/ is higher than that of plain PZT (52/48). For PZT (94/6) doped with 0.5 wt.% 4PbO-B/sub 2/O/sub 3/, a planar coupling factor and a dielectric constant equal to 0.16 and 330, respectively, can be attained with sintering at 950 degrees C for 30 h.<>
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
