Ondrej Dyck, Aisha Okmi, Kai Xiao, Sidong Lei, Andrew R. Lupini, Stephen Jesse
{"title":"Your Clean Graphene is Still Not Clean","authors":"Ondrej Dyck, Aisha Okmi, Kai Xiao, Sidong Lei, Andrew R. Lupini, Stephen Jesse","doi":"10.1002/admi.202400598","DOIUrl":"https://doi.org/10.1002/admi.202400598","url":null,"abstract":"<p>Researchers working with thin samples, such as monolayer graphene, are consistently struggling against contamination. Indeed, the problem of hydrocarbon contamination is known from the earliest days of electron microscopy and efforts to reduce this problem are ubiquitous to almost all high-vacuum experiments. Accurate knowledge of the behavior of such contamination is essential for electron beam (e-beam) based atomic fabrication, where it is aspired to select and control matter on an atom-by-atom basis. Here, the vexing question of hydrocarbon contamination on graphene is taken up. Image intensity is used to directly reveal the presence of diffusing hydrocarbons on ostensibly clean graphene. These diffusing hydrocarbons are previously inferred but not directly observed. Surprising dynamic variations of the concentration of these hydrocarbons impels questions about their origin. Here, some possible explanations are presented and some tentative conclusions are drawn. This work updates the conceptual model of “clean graphene” and offers refinements to the description of e-beam induced hydrocarbon deposition.</p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"12 1","pages":""},"PeriodicalIF":4.3,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202400598","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143119710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yu-Han Huang, Zhi-Wei Chen, Chao-Hsin Wu, Po-Tsung Lee, Shih-Yen Lin
{"title":"Layer Number Controllable Molybdenum Disulfide Film Growth and Its Applications in Vertical and Planar Photodetectors","authors":"Yu-Han Huang, Zhi-Wei Chen, Chao-Hsin Wu, Po-Tsung Lee, Shih-Yen Lin","doi":"10.1002/admi.202400641","DOIUrl":"https://doi.org/10.1002/admi.202400641","url":null,"abstract":"<p>Wafer-scale and layered MoS<sub>2</sub> films are grown by sulfurizing amorphous MoS<sub>2</sub> films deposited on sapphire substrates by using a radio-frequency sputtering system. To verify the layer numbers of the multi-layer MoS<sub>2</sub> films, atomic layer etchings are adopted. Wafer-scale MoS<sub>2</sub> film growth with good layer number uniformity up to 30 is observed. A vertical device with 20-layer MoS<sub>2</sub> embedded in between Al (bottom) and Au (top) electrodes is fabricated. With different work functions of the metal electrodes, photo-excited electrons and holes in the MoS<sub>2</sub> layer can be separated and form photovoltaic responses. With the insertion of 5 nm MoO<sub>3</sub> carrier transport layer between the MoS<sub>2</sub> layer and the top Au electrode, enhanced photovoltaic responses are observed for the device. By using graphene as the carrier transport layer and MoS<sub>2</sub> as the light absorption layer, avalanche photocurrents are observed for planar MoS<sub>2</sub>/graphene photoconductive devices. With the assist of the higher electron density in multi-layer MoS<sub>2</sub>, an easier compensation in the loss of photo-excited electrons and therefore, charge neutrality in the MoS<sub>2</sub> layer can be maintained. Significant reduction in the rise/fall times from >100 ms. to <10 ms. is also observed for the planar photodetector with 10-layer MoS<sub>2</sub> absorption layer.</p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"12 5","pages":""},"PeriodicalIF":4.3,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202400641","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143497411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Nickel Age of High-Temperature Superconductivity","authors":"S. Lin Er Chow, A. Ariando","doi":"10.1002/admi.202400717","DOIUrl":"https://doi.org/10.1002/admi.202400717","url":null,"abstract":"<p>Unconventional high-temperature superconductivity has long been a captivating puzzle in condensed matter physics. The 1987 Nobel Prize in Physics celebrated the discovery of high-temperature superconductivity in copper oxide ceramics. Nearly four decades later, a broad class of high-temperature superconducting oxides has yet to be demonstrated, and the fundamental understanding of the pairing mechanism remains inconclusive. Recently, nickel oxides have emerged as a new class of high-temperature superconductors, beyond copper, where correlated phases can be controlled by doping, pressure, strain, and dimensionality. In this article, we provide our perspective on the recent developments and prospects of the nickel age of high-temperature superconductivity.</p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"12 4","pages":""},"PeriodicalIF":4.3,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202400717","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143431794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Richard Schönlein, Xabier Larrañaga, Asier Panfilo, Yu Li, Aitor Larrañaga, Guoming Liu, Alejandro J. Müller, Robert Aguirresarobe, Jone M. Ugartemendia
{"title":"Enhanced Piezoelectric Properties of Poly(L-lactide) Nanocomposite Microfiber Scaffolds Due to Polydopamine-Coating of Barium Titanate Nanoparticles","authors":"Richard Schönlein, Xabier Larrañaga, Asier Panfilo, Yu Li, Aitor Larrañaga, Guoming Liu, Alejandro J. Müller, Robert Aguirresarobe, Jone M. Ugartemendia","doi":"10.1002/admi.202400546","DOIUrl":"https://doi.org/10.1002/admi.202400546","url":null,"abstract":"<p>Recent biomedical applications demand piezoelectric polylactide (PLA)-based polymers, possessing biodegradable and biocompatible properties for tissue regeneration, implantable force sensors, and energy harvesting devices. However, piezoelectric poly(L-lactide) (PLLA) possesses weak piezoelectric properties in comparison to non-biodegradable poly(vinylidene fluoride) (PVDF), limiting its application. This contribution presents, for the first time, a nanocomposite strategy to enhance the piezoelectric properties of PLLA, while maintaining cytocompatibility. Biocompatible and piezoelectric barium titanate (BTO) nanoparticles (NPs) are coated by polydopamine (PDA) (cBTO NPs) to improve the quality of the matrix-filler interface and enhanced the force transmission toward the BTO NPs. Electrospun PLLA/cBTO nanocomposite microfiber scaffolds with 5 wt% of PDA-coated BTO NPs (cBTO) exhibited an increase in piezoelectric properties of 120% in comparison to pristine PLLA microfiber scaffolds, implying a voltage output increase from 1.4 ± 0.1 to 3.2 ± 0.2 V. Furthermore, the PDA-coating of BTO (cBTO) NPs itself has an intensifying impact on the piezoelectric properties of PLLA/cBTO nanocomposite compared to non-coated BTO NPs, increasing the voltage output by 41%. This demonstrates the great potential of PDA-coating of piezoelectric NPs to enhance the piezoelectric response of PLLA.</p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"12 1","pages":""},"PeriodicalIF":4.3,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202400546","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143118859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kelly Turner, Gerard Colston, Katarzyna Stokeley, Andrew Newton, Arne Renz, Marina Antoniou, Peter Gammon, Philip Mawby, Vishal Shah
{"title":"Effect of Mesa Sidewall Angle on 4H-Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride (Adv. Mater. Interfaces 33/2024)","authors":"Kelly Turner, Gerard Colston, Katarzyna Stokeley, Andrew Newton, Arne Renz, Marina Antoniou, Peter Gammon, Philip Mawby, Vishal Shah","doi":"10.1002/admi.202470080","DOIUrl":"https://doi.org/10.1002/admi.202470080","url":null,"abstract":"<p><b>Silicon Carbide</b></p><p>The wide bandgap semiconductor material Silicon Carbide (SiC) is an attractive proposition to replace Silicon for the development of advanced novel power electronic devices, such as superjunction devices. Trench refill epitaxy (TFE) has been developed, where semiconductor processing techniques have been used to create microstructures in SiC and refilled with single crystal SiC to fabricate these exotic superjunction structures. More details can be found in article 2400466 by Vishal Shah and co-workers.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"11 33","pages":""},"PeriodicalIF":4.3,"publicationDate":"2024-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202470080","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142708294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Effect of Surface Functionalization of Si3N4 Fillers on Thermal and Mechanical Properties of TIMs","authors":"Zaifu Jin, JinHong Li, Jiaqing Zhao, Yixuan Ge","doi":"10.1002/admi.202400503","DOIUrl":"https://doi.org/10.1002/admi.202400503","url":null,"abstract":"<p>Thermal interface materials (TIMs), which consist of polymers and thermally conductive fillers, are crucial for improving heat dissipation. This study examines the impact of surface functionalization of Si₃N₄ thermal conductive fillers on the performance of TIMs. Si₃N₄ fillers are modified with silane coupling agents of varying alkyl chain lengths, producing fillers with contact angles ranging from 25° to 151.2°, thereby ensuring enhanced interfacial compatibility with various polymers. The modified fillers are incorporated into three common polymers—silica gel (SG), epoxy resin (EP), and polyurethane (PU)—to fabricate TIMs. When the contact angle of Si₃N₄ fillers is 73.3°, they demonstrate excellent interfacial compatibility with EP, leading to a 54.37% increase in thermal conductivity and a 162.75% enhancement in elongation at break for the TIM. At a contact angle of 132.7°, the TIMs prepared with SG exhibit an 86.36% increase in thermal conductivity and a 23.88% increase in elongation at break. Given that the original Si₃N₄ already possesses adequate interfacial compatibility with PU, no further modification is required. These findings offer valuable insights for future research aimed at optimizing Si₃N₄ fillers and TIMs to achieve enhanced thermal and mechanical properties.</p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"12 1","pages":""},"PeriodicalIF":4.3,"publicationDate":"2024-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202400503","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143118830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Haris Naeem Abbasi, Moheb Sheikhi, Donghyeok Kim, Ranveer Singh, Jiarui Gong, Jie Zhou, Qiming Zhang, Shuoyang Qiu, Carolina Adamo, Patrick Marshall, Clincy Cheung, Vincent Gambin, Zhenqiang Ma
{"title":"Highly Strained AlGaAs-GaAsP Nanomembranes-Based High-Performance Diode","authors":"Haris Naeem Abbasi, Moheb Sheikhi, Donghyeok Kim, Ranveer Singh, Jiarui Gong, Jie Zhou, Qiming Zhang, Shuoyang Qiu, Carolina Adamo, Patrick Marshall, Clincy Cheung, Vincent Gambin, Zhenqiang Ma","doi":"10.1002/admi.202400588","DOIUrl":"https://doi.org/10.1002/admi.202400588","url":null,"abstract":"<p>Nanomembranes (NMs) made from single-crystalline inorganic semiconductors offer unique properties, such as flexibility, transparency, and tunable bandgaps, making them suitable for complex device integration and next-generation high-power devices. In this study, the fabrication of a high-performing emitter and base (<i>E</i>-<i>B</i>) diode using transferable NMs of <i>n</i>-AlGaAs/<i>p</i>-GaAsP is demonstrated. Using a modified epitaxial lift-off and transfer method, a single-crystalline <i>n</i>-AlGaAs/<i>p</i>-GaAsP fragile NMs transfer onto ultrathin oxide (UO) grown GaN and Si substrates. The crystalline quality of the NMs is characterized by X-ray diffraction and Raman spectroscopy techniques before and after transfer, no noticeable degradation has been found in its crystalline quality. In addition, atomic force microscopy and scanning electron microscopy images confirm the smooth surface and uniformity of the NMs over the whole substrate without any formation of cracks, respectively. Kelvin probe force microscopy demonstrates the formation of a nanoscale contact potential barrier at the interface of the <i>E-B</i> diode. Furthermore, current–voltage (<i>I</i>–<i>V</i>) measurements demonstrate that the performance of the NM-based <i>E</i>-<i>B</i> diode is comparable to that of a rigid diode on the as-grown sample. The findings highlight the potential of the epitaxial lift-off and transfer method for the heterogeneous integration of III–V semiconductor materials to overcome the lattice-mismatch limitations.</p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"12 3","pages":""},"PeriodicalIF":4.3,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202400588","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143118199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Farzaneh Talebkeikhah, Yu-Cheng Lin, Jeremy S. Luterbacher
{"title":"Synthesis of High-Surface-Area Alumina using Carbon Templating and Liquid Phase Atomic Layer Deposition","authors":"Farzaneh Talebkeikhah, Yu-Cheng Lin, Jeremy S. Luterbacher","doi":"10.1002/admi.202400520","DOIUrl":"https://doi.org/10.1002/admi.202400520","url":null,"abstract":"<p>Certain metal oxides exhibit unique phases and associated properties that can generally only be accessed via high temperature treatments. However, high temperature processes usually lead to surface reconstruction and pore collapse, which reduces the active surface area. In this study, a novel method for accessing phases is demonstrated at high temperature while maintaining porosity by depositing thin oxide films onto a temperature stable activated carbon template. Subsequent annealing and calcination creates the phase of interest while maintaining the porous structure. Specifically, stoichiometrically limited liquid phase atomic layer deposition is used to deposit 6, 9, 12 and 15 layers of amorphous alumina, which, following high temperature treatment, led to a mixture of α and δ phases with surface areas of 186 and 146 m<sup>2</sup> g<sup>−1</sup> for 6 and 9 layers respectively. Pure α alumina can also be achieved with high surface areas of 76 and 45 m<sup>2</sup> g<sup>−1</sup> for 12 and 15 layers. Importantly, all the samples retained the porosity imparted by the carbon structure, with primarily meso and macro pores. Furthermore, different metal oxides are also deposited onto the activated carbon surface, including ZnO, TiO<sub>2</sub>, ZrO<sub>2</sub>, and Ga<sub>2</sub>O<sub>3</sub> illustrating this templating concept can also be applied to different materials.</p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"11 36","pages":""},"PeriodicalIF":4.3,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202400520","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142868915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Karen M. Marshall, Jonathan P. Wojciechowski, Vineetha Jayawarna, Abshar Hasan, Cécile Echalier, Sebastien J. P. Callens, Tao Yang, Janos M. Kanczler, Jonathan I. Dawson, Alvaro Mata, Manuel Salmeron-Sanchez, Molly M. Stevens, Richard O. C. Oreffo
{"title":"Bioactive Coatings on 3D Printed Polycaprolactone Scaffolds for Bone Regeneration: A Novel Murine Femur Defect Model for Examination of the Biomaterial Capacity for Repair","authors":"Karen M. Marshall, Jonathan P. Wojciechowski, Vineetha Jayawarna, Abshar Hasan, Cécile Echalier, Sebastien J. P. Callens, Tao Yang, Janos M. Kanczler, Jonathan I. Dawson, Alvaro Mata, Manuel Salmeron-Sanchez, Molly M. Stevens, Richard O. C. Oreffo","doi":"10.1002/admi.202400389","DOIUrl":"https://doi.org/10.1002/admi.202400389","url":null,"abstract":"<p>Bone tissue engineering seeks to develop treatment approaches for nonhealing and large bone defects. An ideal biodegradable scaffold will induce and support bone formation. The current study examines bone augmentation in critical-sized bone defects, using functionalized scaffolds, with the hypothesized potential to induce skeletal cell differentiation. 3D printed, porous poly(caprolactone) trimethacrylate (PCL-TMA900) scaffolds are applied within a murine femur defect, stabilized by a polyimide intramedullary (IM) pin. The PCL-TMA900 scaffolds are coated with i) elastin-like polypeptide (ELP), ii) poly(ethyl acrylate) (PEA)/fibronectin (FN)/bone morphogenetic protein-2 (PEA/FN/BMP-2), iii) both ELP and PEA/FN/BMP-2, or iv) Laponite nanoclay binding BMP-2. Sequential microcomputed tomography (µCT) and histological analysis are performed. PCL-TMA900 is robust and biocompatible and when coated with the nanoclay material Laponite and BMP-2 induce consistent, significant bone formation compared to the uncoated PCL-TMA900 scaffold. Critically, the BMP-2 is retained, due to the Laponite, producing bone around the scaffold in the desired shape and volume, compared to bone formation observed with the positive control (collagen sponge/BMP-2). The ELP and/or PEA/FN/BMP-2 scaffolds do not demonstrate significant or consistent bone formation. In summary, Laponite/BMP-2 coated PCL-TMA900 scaffolds offer a biodegradable, osteogenic construct for bone augmentation with potential for development into a large scale polymer scaffold for clinical translation.</p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"12 1","pages":""},"PeriodicalIF":4.3,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202400389","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143118066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}