Advanced Materials Interfaces最新文献_第6页

Methodology for Liquid Foam Templating of Hydrogel Foams: A Rheological and Tomographic Characterization (Adv. Mater. Interfaces 31/2024) 水凝胶泡沫的液体泡沫模板化方法：流变学和层析表征（Adv. Mater. Interfaces 31/2024）

IF 4.3 3区材料科学

Advanced Materials Interfaces Pub Date : 2024-11-03 DOI: 10.1002/admi.202470076

Manon Jouanlanne, Imene Ben-Djemaa, Antoine Egelé, Leandro Jacomine, Jean Farago, Wiebke Drenckhan, Aurélie Hourlier-Fargette

引用次数: 0

Exfoliating Ti3AlC2 MAX into Ti3C2Tz MXene: A Powerful Strategy to Enhance High-Voltage Dielectric Performance of Percolation-Based PVDF Nanodielectrics 将Ti3AlC2 MAX剥离成Ti3C2Tz MXene：一种增强PVDF纳米电介质高压介电性能的有效策略

IF 4.3 3区材料科学

Advanced Materials Interfaces Pub Date : 2024-11-03 DOI: 10.1002/admi.202400499

Ruben Windey, Nick Goossens, Marion Cardous, Jeroen Soete, Jozef Vleugels, Martine Wevers

{"title":"Exfoliating Ti3AlC2 MAX into Ti3C2Tz MXene: A Powerful Strategy to Enhance High-Voltage Dielectric Performance of Percolation-Based PVDF Nanodielectrics","authors":"Ruben Windey, Nick Goossens, Marion Cardous, Jeroen Soete, Jozef Vleugels, Martine Wevers","doi":"10.1002/admi.202400499","DOIUrl":"https://doi.org/10.1002/admi.202400499","url":null,"abstract":"All-solid-state polymer dielectrics benefit from a superior voltage window and conveniently circumvent fire hazards associated with liquid electrolytes. Nevertheless, their future competitiveness with alternative energy storage technologies requires a significant enhancement in their energy density. The addition of conductive 2D MXene particles is a promising strategy for creating percolation-based nanodielectrics with improved dielectric response. However, a full understanding of the nanodielectric production – microstructure – dielectric performance correlations is crucial. Therefore, this research considered Ti3AlC2 MAX phase and Ti3C2Tz MXene as electrically conductive ceramic fillers in polyvinylidene fluoride (PVDF). Microstructural characterization of both nanodielectrics demonstrated excellent filler dispersion. Additionally, the exfoliation of Ti3AlC2 brought forth extensive alignment and interface accessibility, synergistically activating a pronounced interfacial polarization and nanocapacitor mechanism that enhanced the energy density of PVDF by a factor 100 to 3.1 Wh kg−1@0.1 Hz at 22.9 vol% MXene filler. The stellar increase in the PVDF energy density occurred for a broad MXene filler loading range owing to the unique 2D morphology of MXenes, whereas the addition of Ti3AlC2 fillers only caused a detrimental reduction. Hence, this study buttressed the importance to exfoliate the parental MAX phase into multi-layered MXene as a decisive strategy for boosting nanodielectric performance.","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"11 36","pages":""},"PeriodicalIF":4.3,"publicationDate":"2024-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202400499","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142868073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Masthead: (Adv. Mater. Interfaces 31/2024) 刊头：（Adv. Mater. Interfaces 31/2024）

IF 4.3 3区材料科学

Advanced Materials Interfaces Pub Date : 2024-11-03 DOI: 10.1002/admi.202470077

引用次数: 0

Bone-Induced Nanocomposite Coating with a “Sandwich” Structure 具有“三明治”结构的骨诱导纳米复合涂层

IF 4.3 3区材料科学

Advanced Materials Interfaces Pub Date : 2024-11-02 DOI: 10.1002/admi.202400164

Yushuang Guan, Guoming Zou, Henigul osman, Dong Zhang, Tianyou Zhou, Wenguo Cui, Yingbo Wang

{"title":"Bone-Induced Nanocomposite Coating with a “Sandwich” Structure","authors":"Yushuang Guan, Guoming Zou, Henigul osman, Dong Zhang, Tianyou Zhou, Wenguo Cui, Yingbo Wang","doi":"10.1002/admi.202400164","DOIUrl":"https://doi.org/10.1002/admi.202400164","url":null,"abstract":"Infection-induced bone defects present significant challenges in clinical bone regeneration, frequently leading to poor bone induction, recurring infections, and complications such as pain and chronic inflammation. This study introduces a novel Ti/Lignin-Ag@PLL composite coating with a “sandwich” structure, designed to integrate pro-adhesion, photothermal-photodynamic antibacterial, and osteogenic properties. The Ti/Lignin-Ag@PLL composite coating is fabricated using self-assembly technology, in which Ag+ is reduced to silver nanoparticles (Ag-NPs) by lignin, followed by Polylysine (PLL) grafting. Photothermal conversion efficiency is evaluated under near-infrared (NIR) laser irradiation, while antibacterial activity is tested against E. coli and S. aureus. Biocompatibility is also assessed using vascular endothelial cells (VECs) and osteoblasts (OBs). The results indicate that the Ti/Lignin-Ag@PLL coating demonstrates a 31% photothermal conversion efficiency and nearly 100% antibacterial efficacy against Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) under NIR irradiation for 10 min. Without irradiation, the antibacterial rates are 85% and 94%, respectively, after 24 h. Additionally, the coating significantly promotes cell adhesion, proliferation, and osteogenesis, as evidenced by the upregulation of Runx2 and Collagen I. This study uniquely contributes to the development of a multifunctional composite coating that effectively combines robust antibacterial properties with enhanced osteogenic potential, offering a promising solution for bone tissue repair and infection prevention.","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"11 36","pages":""},"PeriodicalIF":4.3,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202400164","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142868071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Controlled Engineering of Defects and Interfaces in Thermoelectric Materials With Atomic Layer Deposition

IF 4.3 3区材料科学

Advanced Materials Interfaces Pub Date : 2024-10-31 DOI: 10.1002/admi.202400581

Gwang Min Park, Seunghyeok Lee, Tae Joo Park, Seung-Hyub Baek, Jin-Sang Kim, Seong Keun Kim

{"title":"Controlled Engineering of Defects and Interfaces in Thermoelectric Materials With Atomic Layer Deposition","authors":"Gwang Min Park, Seunghyeok Lee, Tae Joo Park, Seung-Hyub Baek, Jin-Sang Kim, Seong Keun Kim","doi":"10.1002/admi.202400581","DOIUrl":"https://doi.org/10.1002/admi.202400581","url":null,"abstract":"Enhancing the performance of thermoelectric materials remains critical for practical applications. Increasing the power factor and reducing the thermal conductivity are key strategies for improving the thermoelectric performance. Doping, incorporating secondary phases, and generating dislocations can be used to introduce defects and grain boundaries to improve the thermoelectric performance. The application of an ultrathin film as a coating on thermoelectric materials via atomic layer deposition (ALD) has recently attracted attention as a novel approach to enhance the performance. The excellent conformality of ALD enables the conformal deposition of ultrathin films on powder to enable the interfacial properties to be meticulously controlled even after sintering. Using ALD to deposit an ultrathin layer on the thermoelectric powder matrix induces various defects through the interactions of the coating material with the thermoelectric matrix, which provide exquisite control over the material properties. This review discusses the phenomena induced by applying ultrathin coatings to thermoelectric materials through ALD, elucidates the underlying mechanisms, and examines the effects on the thermoelectric performance. Based on these insights, innovative pathways for applying ALD to thermoelectric materials are proposed, and robust strategies for enhancing these properties through the precise modulation of diverse defects and interfaces are discussed.","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"12 3","pages":""},"PeriodicalIF":4.3,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202400581","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143121404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultra-Thin Strain-Relieving Si1−xGex Layers Enabling III-V Epitaxy on Si

IF 4.3 3区材料科学

Advanced Materials Interfaces Pub Date : 2024-10-25 DOI: 10.1002/admi.202400580

Trevor R. Smith, Spencer McDermott, Vatsalkumar Patel, Ross Anthony, Manu Hedge, Sophie E. Bierer, Sunzhuoran Wang, Andrew P. Knights, Ryan B. Lewis

{"title":"Ultra-Thin Strain-Relieving Si1−xGex Layers Enabling III-V Epitaxy on Si","authors":"Trevor R. Smith, Spencer McDermott, Vatsalkumar Patel, Ross Anthony, Manu Hedge, Sophie E. Bierer, Sunzhuoran Wang, Andrew P. Knights, Ryan B. Lewis","doi":"10.1002/admi.202400580","DOIUrl":"https://doi.org/10.1002/admi.202400580","url":null,"abstract":"The explosion of artificial intelligence, the possible end of Moore's law, dawn of quantum computing, and the continued exponential growth of data communications traffic have brought new urgency to the need for laser integration on the diversified Si platform. While diode lasers on group III-V platforms have long-powered internet data communications and other optoelectronic technologies, direct integration with Si remains problematic. A paradigm-shifting solution requires exploring new and unconventional materials and integration approaches. In this work, it is shown that a sub-10-nm ultra-thin Si1−xGex buffer layer fabricated by an oxidative solid-phase epitaxy process can facilitate extraordinarily efficient strain relaxation. The Si1−xGex layer is formed by ion implanting Ge into Si(111) and selectively oxidizing Si atoms in the resulting ion-damaged layer, precipitating a fully strain-relaxed Ge-rich layer between the Si substrate and surface oxide. The efficient strain relaxation results from the high oxidation temperature, producing a periodic network of dislocations at the substrate interface, coinciding with modulations of the Ge content in the Si1−xGex layer and indicating the presence of defect-mediated diffusion of Si through the layer. The epitaxial growth of high-quality GaAs is demonstrated on this ultra-thin Si1−xGex layer, demonstrating a promising new pathway for integrating III-V lasers directly on the Si platform.","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"12 3","pages":""},"PeriodicalIF":4.3,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202400580","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143119300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors

IF 4.3 3区材料科学

Advanced Materials Interfaces Pub Date : 2024-10-25 DOI: 10.1002/admi.202400639

Soroush Ghandiparsi, Bikram Chatterjee, Jimmy-Xuan Shen, Miranda S. Gottlieb, Clint D. Frye, Joseph D. Schneider, Ryan D. Muir, Brandon W. Buckley, Sara E. Harrison, Qinghui Shao, Joel B. Varley, Lars F. Voss

{"title":"Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors","authors":"Soroush Ghandiparsi, Bikram Chatterjee, Jimmy-Xuan Shen, Miranda S. Gottlieb, Clint D. Frye, Joseph D. Schneider, Ryan D. Muir, Brandon W. Buckley, Sara E. Harrison, Qinghui Shao, Joel B. Varley, Lars F. Voss","doi":"10.1002/admi.202400639","DOIUrl":"https://doi.org/10.1002/admi.202400639","url":null,"abstract":"Optically addressable light valves (OALVs) are specialized optical components utilized for spatial beam shaping in various laser-based applications, including optics damage mitigation, and enhanced functionality in diode-based additive manufacturing requiring high intensities. Current state-of-the-art OALVs employ photoconductors such as Bismuth Silicon Oxide (BSO) or Bismuth Germanium Oxide (BGO), which suffer from limited laser-induced damage thresholds (LiDT) and inadequate thermal conductivities, thus restricting their use in high peak and average power applications. Aluminum nitride (AlN), an emerging ultra-wide band gap (UWBG) III–V semiconductor, offers promising optoelectronic properties and superior thermal conductivity (>300 Wm−1K−1 at 298° K, compared to BSO's 3.29 Wm−1K−1). In this study, the first AlN-based OALVs are designed, fabricated, and experimentally demonstrated using commercially available single-crystal AlN substrates. These AlN-based OALVs have shown clear superiority over BSO and BGO-based devices. Design considerations for OALVs incorporating UWBG photoconductors are discussed, and the photoresponsivity from defect-mediated sub-bandgap absorption in AlN crystals is verified as sufficient for OALVs operating under high light fluences. The optimum driving voltage for the AlN-based OALV is determined to be ≈ 45 Vpp at 100 Hz, achieving a transmittance of 91.3%, an extinction ratio (ER) of more than 100, and a 51:1 image contrast.","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"12 2","pages":""},"PeriodicalIF":4.3,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202400639","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143119303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Non-Fouling Multi-Azide Polyoxazoline Brush-co-Polymers for Sensing Applications

IF 4.3 3区材料科学

Advanced Materials Interfaces Pub Date : 2024-10-25 DOI: 10.1002/admi.202400322

Tobias Komsthöft, Niccolò Bartalucci, Mark W. Tibbitt, Samuele Tosatti, Stefan Zürcher

{"title":"Non-Fouling Multi-Azide Polyoxazoline Brush-co-Polymers for Sensing Applications","authors":"Tobias Komsthöft, Niccolò Bartalucci, Mark W. Tibbitt, Samuele Tosatti, Stefan Zürcher","doi":"10.1002/admi.202400322","DOIUrl":"https://doi.org/10.1002/admi.202400322","url":null,"abstract":"\u0000One of the key parameters of an artificial biosensor is a high signal-to-noise ratio. This is achieved by limiting non-specific interactions while simultaneously maximizing the targeted specific interaction. Here, it is combined non-fouling characteristics of poly(2-methyl-2-oxazoline) (PMOXA) coatings with an abundance of azide groups to create a multi-azide containing poly(2-methyl-2-oxazoline-co-2-(3-azidopropyl)-2-oxazoline) (PMCA) that can participate in bioorthogonal strain-promoted azide-alkyne cycloaddition (SPAAC) for functionalization. This functional polymer is made surface-active using the PAcrAm™ technology to obtain well-defined spontaneously adsorbed monolayers on gold surfaces. The resistance to non-specific interactions is tested against full human serum (HS), analyzed via variable angle spectroscopic ellipsometry (VASE), and compared to equivalent coatings based on PMOXA and azido-poly(ethylene glycol) (PEG-N3). The specific interactions are investigated via VASE and quartz crystal microbalance with dissipation (QCM-D) by immobilization of dibenzocyclooctyne-PEG4-biotin conjugate (DBCO-biotin) and streptavidin. The new PMCA-based coating shows superior resistance to non-specific protein adhesion than equivalent coatings based on commercially available PEG-N3 and significantly increases capacity for SPAAC. A proof of principle assay (biotin-streptavidin/biotin-BSA/anti-BSA) shows improved binding for the new PMCA polymer compared with single azide PEG.","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"11 35","pages":""},"PeriodicalIF":4.3,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202400322","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143119331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Atomic Layer Processing (ALP): Ubi es et Quo Vadis?

IF 4.3 3区材料科学

Advanced Materials Interfaces Pub Date : 2024-10-25 DOI: 10.1002/admi.202400408

Kristina Ashurbekova, Mato Knez

{"title":"Atomic Layer Processing (ALP): Ubi es et Quo Vadis?","authors":"Kristina Ashurbekova, Mato Knez","doi":"10.1002/admi.202400408","DOIUrl":"https://doi.org/10.1002/admi.202400408","url":null,"abstract":"Atomic Layer Processing (ALP) techniques have transformed materials engineering by enabling atomic/molecular-level control over composition, fidelity in structure replication, and properties. Tracing its origins to pioneering molecular layering and atomic layer deposition work in the mid-20th century, this multifaceted field has remarkably diversified to include molecular layer deposition (MLD), atomic layer etching (ALE), area-selective deposition (ASD), and vapor-phase infiltration (VPI) processes. ALP is making great impacts across diverse disciplines – facilitating semiconductor miniaturization through ultrathin dielectric films, improving battery materials and engineering catalysts for energy applications, creating bioactive surfaces for advanced biomaterials, and promoting sustainable membranes for environmental remediation. As ALP techniques continue evolving through integration with additive manufacturing, machine learning, and in situ diagnostics, new frontiers in materials design are emerging, driven by the growing focus on environmental considerations like renewable precursors, energy-efficient processes, and waste minimization. This perspective article examines ALP's historical development, highlights current state-of-the-art applications across selected fields, and provides insights into the anticipated future trajectory, emerging application domains, and the pivotal role of academic-industry-research laboratory collaborations in catalyzing ALP innovations and facilitating its widespread adoption as a transformative manufacturing platform.","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"12 4","pages":""},"PeriodicalIF":4.3,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202400408","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143431821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Masthead: (Adv. Mater. Interfaces 30/2024) 刊头：（Adv. Mater. Interfaces 30/2024）

IF 4.3 3区材料科学

Advanced Materials Interfaces Pub Date : 2024-10-23 DOI: 10.1002/admi.202470074

引用次数: 0