Advanced Materials Interfaces最新文献

{"title":"Electrically Driven Interlayer Excitons in MoSe2/WSe2 Heterostructures","authors":"Dohyun Kwak,&nbsp;Kenji Watanabe,&nbsp;Takashi Taniguchi,&nbsp;Thomas Mueller","doi":"10.1002/admi.202500156","DOIUrl":"https://doi.org/10.1002/admi.202500156","url":null,"abstract":"<p>Heterostructures based on monolayer transition metal chalcogenide (TMD) semiconductors have offered a robust platform for exploring light-matter interactions. The rotational misalignment between two TMDs enables modulation of the electronic band structure through the formation of an in-plane moiré superlattice. Multiple interlayer excitons in TMD heterostructures have been reported under optical excitation, but studies related to optoelectronic devices remain limited. Here, electrically driven multiple interlayer excitons are demonstrated in the transient electroluminescence (EL) of MoSe₂/WSe₂ heterostructures, sandwiched between two layers of hexagonal boron nitride (hBN) and a single graphene. The EL emission from multiple interlayer excitons in the MoSe₂/WSe₂ heterostructures is induced by applying an alternating voltage to a two-terminal device. The EL characteristic of interlayer excitons can be modulated by adjusting gate and pulse parameters, which control charge carrier injection into MoSe₂/WSe₂ heterostructures. Furthermore, distinct recombination processes are reported in MoSe₂/WSe₂ heterostructures with varying hole injection levels. The results provide a foundation for exploiting interlayer excitons in optoelectronic devices based on TMD heterostructures.</p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"12 12","pages":""},"PeriodicalIF":4.3,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202500156","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144514552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Correction to “A Fully-Bioresorbable Nanostructured Molybdenum Oxide-Based Electrode for Continuous Multi-Analyte Electrochemical Sensing”","authors":"Catarina Fernandes,&nbsp;Filippo Franceschini,&nbsp;Jorid Smets,&nbsp;Olivier Deschaume,&nbsp;Nurul Rusli,&nbsp;Carmen Bartic,&nbsp;Rob Ameloot,&nbsp;Kitty Baert,&nbsp;Jon Ustarroz,&nbsp;Irene Taurino","doi":"10.1002/admi.202500367","DOIUrl":"https://doi.org/10.1002/admi.202500367","url":null,"abstract":"<p><i>Adv. Mater. Interfaces</i>, <b>2024</b>, <i>11</i>, 2400054</p><p>DOI: 10.1002/admi.202400054</p><p>Dear Editorial Office of ADMI,</p><p>My name is Catarina Fernandes, author of article admi.202400054, and this communication is on behalf of all authors. Namely, <i>Catarina Fernandes^*1, Filippo Franceschini², Jorid Smets³, Olivier Deschaume⁴, Nurul Rusli¹, Carmen Bartic⁴, Rob Ameloot³, Kitty Baert⁶, Jon Ustarroz^5,6, Irene Taurino^1,2</i></p><p>*C. Fernandes, Corresponding Author</p><p>¹Department of Electrical Engineering (Micro- and Nano Systems), KU Leuven – University of Leuven, Leuven 3001, Belgium</p><p>²Department of Physics and Astronomy (Semiconductor Physics), KU Leuven – University of Leuven, Leuven 3001, Belgium</p><p>³Centre for Membrane Separations, Adsorption, Catalysis, and Spectroscopy (cMACS), KU Leuven – University of Leuven, Leuven 3001, Belgium</p><p>⁴Department of Physics and Astronomy (Soft Matter Physics and Biophysics Unit), KU Leuven – University of Leuven, Leuven 3001, Belgium</p><p>⁵Chemistry of Surfaces, Interfaces and Nanomaterials (ChemSIN), ULB – Université Libre de Bruxelles, Brussels 1050, Belgium</p><p>⁶SURF-Research Group Electrochemical and Surface Engineering, VUB – Vrije Universiteit Brussel, Brussels 1050, Belgium</p><p>DOI: 10.1002/admi.202400054</p><p>I have recently discovered 3 small typos in my article number admi.202400054, and was wondering if it would be possible to have these corrected and the article updated.</p><p><span>The errors in question:</span></p><p><b>Page 8/17</b>: “1% and 10% of dO for specific tissues”</p><p> Correction: It should have been “O₂” instead of “dO”.</p><p><b>Page 14/17</b>: “in simulated biofluids at physiologically relevant dO concentrations (i.e., &lt; 10%)”</p><p> Correction: It should have been “O₂” instead of “dO”.</p><p><b>Page 15/17</b>: “To mimic hypoxic conditions in vitro (&lt;2% O₂), a gas-tight electrochemical cell and glove box with both oxygen and temperature level control were required.”</p><p> Correction: It should have been “1% O₂” instead of “&lt;2% O₂”.</p><p><span>To add to the article for clarification:</span></p><p>To clarify that we make a distinction between dO and O₂ we would like to add a sentence in <b>Section 5 “Experimental Section”</b>, specifically under the sub-section “Electrochemical dO sensing”. To <b>add</b>:</p><p>“It is vital to note that 6% dO roughly equals 1% O₂”.</p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"12 13","pages":""},"PeriodicalIF":4.3,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202500367","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144646791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Implied Open Circuit Voltage of MoS2 via Cation-based TFSI Passivation","authors":"Ary Anggara Wibowo,&nbsp;Anh Dinh Bui,&nbsp;Zhehao Sun,&nbsp;Li-chun Chang,&nbsp;Zongyou Yin,&nbsp;Yuerui Lu,&nbsp;Daniel Macdonald,&nbsp;Hieu Trong Nguyen","doi":"10.1002/admi.202500059","DOIUrl":"https://doi.org/10.1002/admi.202500059","url":null,"abstract":"<p>Monolayer molybdenum disulphide (MoS₂) holds great potential for optoelectronic and photovoltaic applications, yet its performance is limited by intrinsic defects, such as sulfur vacancies, that hinder photoluminescence (PL) and charge carrier dynamics. This study investigates the effects of passivation using cation-based bis(trifluoromethanesulfonimide) (TFSI) treatments (Li-TFSI, Cs-TFSI, and Rb-TFSI) on the optoelectronic properties of MoS₂ monolayers. Implied open-circuit voltages (<i>iV_oc</i>) at 1 sun illumination are taken from photoluminescence measurements, yielding post-treatment values of 1425, 1351, and 1381 mV for Li-TFSI, Rb-TFSI, and Cs-TFSI, respectively, indicating reduced non-radiative recombination. Optical absorption also increased after the cation-based TFSI treatment, leading to expected improvements in short-circuit current densities (<i>J_SC</i>). These results demonstrate that cations can play an important role in reducing defect-related recombination and improving charge carrier dynamics, and that cation-based TFSI passivation may help to enhance the efficiency of MoS₂-based optoelectronic devices.</p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"12 12","pages":""},"PeriodicalIF":4.3,"publicationDate":"2025-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202500059","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144514875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Chemical Vapor Deposition for the Fabrication of WTe2/h-BN Heterostructures","authors":"Andrejs Terehovs,&nbsp;Aris Jansons,&nbsp;Darja Dolbe,&nbsp;Jānis Švirksts,&nbsp;Jevgenijs Gabrusenoks,&nbsp;Anatolijs Sarakovskis,&nbsp;Gunta Kunakova","doi":"10.1002/admi.202500091","DOIUrl":"https://doi.org/10.1002/admi.202500091","url":null,"abstract":"<p>Tungsten ditelluride (WTe₂) is a transition metal dichalcogenide with exotic properties, such as the quantum spin Hall effect, which has been demonstrated in monolayer WTe₂ heterostructures with h-BN. So far, these studies have relied on heterostructure fabrication via exfoliation, while direct growth methods to produce high-quality 2D WTe₂ on hexagonal boron nitride remain a challenge. Systematic studies of chemical vapor deposition (CVD) using NaCl as a seeding promoter are reported to produce WTe₂ crystals with different morphologies on Si/SiO₂ and Si/SiO₂/h-BN (exfoliated flakes or CVD monolayer) substrates. The formation of vertical WTe₂/h-BN heterostructures can be achieved by using a slightly increased growth temperature as compared to SiO₂ substrates, and characterization, including Raman and XPS studies, confirms the successful growth of high-quality WTe₂ on h-BN. This is further verified by magnetotransport measurements at low temperatures.</p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"12 12","pages":""},"PeriodicalIF":4.3,"publicationDate":"2025-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202500091","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144514871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An Atomic-Scale View at γ’-Fe4N as Hydrogen Barrier Material","authors":"Aleksander Albrecht,&nbsp;Sang Yoon Song,&nbsp;Su-Hyun Yoo,&nbsp;Chang-Gi Lee,&nbsp;Mathias Krämer,&nbsp;Marcus Hans,&nbsp;Baptiste Gault,&nbsp;Yan Ma,&nbsp;Dierk Raabe,&nbsp;Seok Su Sohn,&nbsp;Yonghyuk Lee,&nbsp;Se-Ho Kim","doi":"10.1002/admi.202500207","DOIUrl":"https://doi.org/10.1002/admi.202500207","url":null,"abstract":"<p>Hydrogen, while a promising sustainable energy carrier, presents challenges such as the embrittlement of materials due to its ability to penetrate and weaken their crystal structures. Here γ’-Fe₄N nitride layers, formed on iron through a cost-effective gas nitriding, are investigated as an effective hydrogen permeation barrier. The relatively short process carried out at 570 °C consisted of pre-nitriding in an atmosphere with higher nitriding potential, followed by treatment in a nitriding potential of 0.0016 Pa^−1/2 to obtain a pure γ’ layer. A combination of screening methods, including atom probe tomography, density functional theory calculations, and hydrogen permeation analysis, revealed that the nitride layer reduces hydrogen diffusion (steady-state hydrogen flux 3.21 x 10⁻⁸ mol/m²·s) by a factor of 20 compared to pure iron, at room temperature. This reduction is achieved by creating energetically unfavorable states due to stronger hydrogen-binding at the surface and high energy barriers for diffusion. The findings demonstrate the potential of γ’-Fe₄N as a cost-efficient and easy-to-process solution to protect metallic materials exposed to hydrogen at low temperatures, with great advantages for large-scale applications.</p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"12 13","pages":""},"PeriodicalIF":4.3,"publicationDate":"2025-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202500207","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144647010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Giant Spin Pumping at Polymer/Ferromagnet Interfaces for Hybrid Spintronic Devices","authors":"Shiva Gaur,&nbsp;Akash Kumar,&nbsp;Himanshu Bangar,&nbsp;Utkarsh Shashank,&nbsp;Hukum Singh,&nbsp;Saroj Prasad Dash,&nbsp;Anubhav Raghav,&nbsp;Johan Åkerman","doi":"10.1002/admi.202500306","DOIUrl":"https://doi.org/10.1002/admi.202500306","url":null,"abstract":"<p>While the growing utilization of polymers in flexible electronic devices has sparked significant interest in polymer/metal interfaces, spintronic studies of such interfaces remain limited. Here, spin pumping across a polymer/ferromagnet metal interface is systematically studied between hydrogen silsesquioxane (HSQ) oligomer layers (t_HSQ = 30, 36, 48 nm) and NiFe (t_NiFe = 4, 5, 7, 10 nm) thin films. Using ferromagnetic resonance measurements, strong spin pumping (large linewidth broadening) and a giant spin mixing conductance, reaching 19.8 nm⁻² for HSQ = 48 nm are observed, i.e. comparable to that of heavy metals. The results suggest efficient spin transfer across the HSQ/NiFe interface, possibly originating from a combination of spin and orbital pumping, and provide valuable insights for designing self-powered and flexible spintronic devices utilizing polymers in combination with ferromagnetic materials.</p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"12 13","pages":""},"PeriodicalIF":4.3,"publicationDate":"2025-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202500306","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144647012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Supergravity and In-Situ Evaporation Induced Well-Aligned and Self-Crosslinked 2D Material-Based Thin Films","authors":"Dawei Zhang,&nbsp;Abdallah Kamal,&nbsp;Baosong Li,&nbsp;Dezhuang Ji,&nbsp;Liming Zhao,&nbsp;Kang Cheng,&nbsp;Xuan Li,&nbsp;Sharmarke Mohamed,&nbsp;Qingwen Li,&nbsp;Liao Kin,&nbsp;Lianxi Zheng","doi":"10.1002/admi.202500223","DOIUrl":"https://doi.org/10.1002/admi.202500223","url":null,"abstract":"<p>Assembling two-dimensional (2D) nanoflakes into freestanding ultrathin films while maintaining their superior mechanical and functional properties can enable a wide range of applications. In this work, a versatile method is presented, based on supergravity drop casting combined with in-situ evaporation to fabricate 2D thin films with excellent alignment, self-crosslinking capability, and high compactness. Using this approach, free-standing graphene oxide (GO) films with a thickness as low as 250 nm, an orientation factor of 0.92, and a record-high tensile strength of 540 MPa are achieved. The supergravity field confines the 2D flakes within an ultrathin liquid layer and generates strong all-directional shear forces that induce superalignment. Simultaneously, in-situ evaporation accelerates dehydration and promotes ester bond formation between adjacent flakes, enabling self-directed crosslinking. This method is further demonstrated to be applicable for creating patterned films and assembling other 2D materials such as MXene, graphene, and their heterostructures. The process, therefore, provides a universal and scalable platform for constructing high-performance 2D building blocks for flexible electronics, membranes, and heterostructured devices.</p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"12 13","pages":""},"PeriodicalIF":4.3,"publicationDate":"2025-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202500223","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144647018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Antifouling PEG Coatings by Thiol-Acrylate Conjugate Addition Reactions for Generation of Protein Patterns via Photobleaching-Induced Protein Binding (PiPB) BioBitmaps Using Maskless Projection Lithography","authors":"Ali Usama,&nbsp;Evelin Schäfer,&nbsp;Pang Zhu,&nbsp;Qingchuan Song,&nbsp;Alexander Weißbach,&nbsp;Dorothea Helmer,&nbsp;Joachim Wollschläger,&nbsp;Changjiang You,&nbsp;Martin Steinhart,&nbsp;Pegah Pezeshkpour,&nbsp;Peilong Hou,&nbsp;Bastian E. Rapp","doi":"10.1002/admi.202500198","DOIUrl":"https://doi.org/10.1002/admi.202500198","url":null,"abstract":"<p>Photobleaching-induced protein binding (PiPB) is a light-based molecular patterning technique that is introduced as <i>Protein Bitmaps</i>. This technique has significant applications in immunoassays and cell-substrate interactions. However, commonly used active surfaces, bovine serum albumin (BSA) coatings prepared via physical adsorption, are prone to desorption or displacement by biomolecules with higher substrate affinities, limiting their stability under complex conditions over several days. To address this, covalently bound high-density antifouling polyethylene glycol (PEG) monolayers are developed by solvent-free coupling of cost-effective homo-bifunctional PEGs (acrylate-PEG-acrylate, PEGDA) to glass/glass-type surfaces silanized with (3-mercaptopropyl) trimethoxysilane (MPTMS) using thiol-acrylate conjugate addition reactions at room temperature, resulting in stable antifouling PEGDA surfaces with terminal-acrylates as free radical acceptors for PiPB. Non-specific protein binding on PEGDA-modified surfaces is evaluated using reflectometric interference spectroscopy (RIfS), showing superior antifouling performance compared to BSA-coated surfaces against avidin and comparable performance against streptavidin and BSA. Furthermore, PiPB with fluorescein-5-biotin conjugate (F5B) is carried out on PEGDA-modified surfaces, performed using a custom-built digital mirror device (DMD)-based lithography system, confirming the suitability of PEGDA-modified surfaces for biomolecule immobilization. The method presented for PEGDA coating preparation has the potential to broaden the applicability of PiPB, particularly using DMD-based devices, in biomedical and surface engineering fields.</p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"12 12","pages":""},"PeriodicalIF":4.3,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202500198","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144514508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Phase Engineering for Enhanced Piezoresponse in P(VDF-TrFE) and Its Composites","authors":"Soyun Joo,&nbsp;Yoonah Ko,&nbsp;Rama K. Vasudevan,&nbsp;Seungbum Hong","doi":"10.1002/admi.202500227","DOIUrl":"https://doi.org/10.1002/admi.202500227","url":null,"abstract":"<p>The negative piezoelectricity in ferroelectric polymers cannot be fully explained by their crystal structure alone. The semi-crystalline nature of these materials suggests a coupling between the intermixed crystalline and amorphous phases. In this study, the role of the phase boundary gradient – a transitional zone of diminishing crystallinity – in enhancing the piezoresponse of P(VDF-TrFE) and its composites is investigated. Using X-ray diffraction (XRD) and advanced piezoresponse force microscopy (PFM) techniques, the effects of thermal treatments and ceramic filler incorporation on the material's nanostructure and electromechanical behavior are examined. These findings reveal that controlled thermal processing within the ferroelectric temperature range modifies the P(VDF-TrFE) nanostructure, resulting in an enhanced piezoresponse despite a decrease in overall crystallinity. This phenomenon is attributed to the expansion of phase boundary gradient regions, contributing to the negative piezoelectric effect. In composites containing barium titanate, radially varying piezoresponse patterns are observed, suggesting the formation of an extended boundary gradient at the polymer-filler interface. The concept of phase boundary engineering presents implications for the design and optimization of high-performance flexible ferroelectrics, potentially leading to advancements in various applications such as sensors, actuators, and energy harvesting devices.</p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"12 14","pages":""},"PeriodicalIF":4.4,"publicationDate":"2025-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202500227","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144740070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Atomic-Scale Mechanisms of Nucleation and Stabilization in CuCrO2 and CuFeO2 Delafossite Thin Films on Al2O3","authors":"Anna Scheid,&nbsp;Qi Song,&nbsp;Stephanie Ribet,&nbsp;Colin Ophus,&nbsp;Y. Eren Suyolcu,&nbsp;Darrell G. Schlom,&nbsp;Tobias Heil,&nbsp;Peter A. van Aken","doi":"10.1002/admi.202500218","DOIUrl":"https://doi.org/10.1002/admi.202500218","url":null,"abstract":"<p>Delafossite thin films exhibit a range of intriguing physical properties derived from their layered structure, which consists of alternating noble metal (<i>A</i>⁺) and (<i>B</i>O₂⁻) sublayers in an <i>AB</i>O₂ stoichiometry. The integration of these properties into functional devices requires the successful epitaxial growth of delafossites as thin films on appropriate substrates. Unfortunately, their unique lattice geometry complicates growth, as different delafossites display variable behavior on the same substrate, often unrelated to lattice mismatch. This suggests the presence of yet unidentified stabilization mechanisms that enable the selective growth of certain delafossites, allowing them to be grown either as films themselves or to be used as buffer layers for subsequent deposition. In this study, advanced scanning transmission electron microscopy (STEM) is employed to investigate the nucleation mechanisms governing the stable growth of Cu-based delafossites on Al₂O₃, specifically CuCrO₂ and CuFeO₂ thin films synthesized via molecular-beam epitaxy. These findings reveal that a combination of a misfit dislocation network at the interface and monolayer-deep chemical intermixing effectively relieves lattice mismatch strain. This mechanism, which differs fundamentally from that observed in Pd-based delafossites, provides key insights into the controlled epitaxy of delafossite materials.</p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"12 12","pages":""},"PeriodicalIF":4.3,"publicationDate":"2025-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202500218","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144514920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}