2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors最新文献_第2页

High-Resolution Transmission Electron Microscopy of Interfaces between thin Nickel Layers on Si(001) After Nickel Silicide Formation under Various Annealing Conditions 不同退火条件下硅化镍形成后Si(001)上薄镍层界面的高分辨率透射电镜研究

2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2006-10-01 DOI: 10.1109/RTP.2006.367991

T. Isshiki, K. Nishio, T. Sasaki, H. Harima, M. Yoshimoto, T. Fukada, W. Yoo

引用次数: 2

Fundamental Mechanisms for Reduction of Leakage Current of Silicon Oxide and Oxynitride through RTP-Induced Phonon-Energy Coupling 通过rtp诱导声子-能量耦合降低氧化硅和氮化氧漏电流的基本机制

2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2006-10-01 DOI: 10.1109/RTP.2006.367989

Zhi Chen, Jun Guo, Pangleen Ong

引用次数: 7

Calibration of Low Temperature Cable-Less Lightpipe Pyrometer on the NIST PEB Test Bed Between 50 °C and 230 °C 在NIST PEB测试台上校准50°C至230°C的低温无电缆光管高温计

2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2006-10-01 DOI: 10.1109/RTP.2006.368014

B. Tsai, K. Kreider, W. Kimes

引用次数: 0

Hot Plate Emissivity Effect in Low Temperature Annealing 低温退火中的热板发射率效应

2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2006-10-01 DOI: 10.1109/RTP.2006.368013

T. Fukada, W. Yoo

{"title":"Hot Plate Emissivity Effect in Low Temperature Annealing","authors":"T. Fukada, W. Yoo","doi":"10.1109/RTP.2006.368013","DOIUrl":"https://doi.org/10.1109/RTP.2006.368013","url":null,"abstract":"The effect of hot plate emissivity on wafer temperature was investigated using a stacked hot plate system in the temperature range of 100degC to 500degC. Aluminum was used as the hot plate material. The emissivity of the hot plates was modified by selecting appropriate machining precision, intentional surface roughening and surface oxidation (aging). As the emissivity of the hot plates increases from 0.06 (as machined aluminum) to ~0.8 (oxidized aluminum with rough surface), the wafer temperature stabilized at higher temperatures. The difference in stabilized wafer temperature increased as the hot plate temperature increased. The difference in stabilized wafer temperature between low emissivity and high emissivity hot plates, at hot plate temperatures of 200degC and 500degC, were ~20degC and ~80degC, respectively. The effect of hot plate emissivity on wafer stabilization temperature was also verified by inserting high emissivity (~0.9 in the infrared region) quartz plates between low emissivity, stacked aluminum hot plates. The emissivity enhancement of the hot plate system was effective in bringing the stabilized wafer temperature close to that of the surrounding hot plates, even at temperatures below 500degC","PeriodicalId":114586,"journal":{"name":"2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114665537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Pattern Effects with the Mask off... 图案效果与蒙版关闭…

2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2006-10-01 DOI: 10.1109/RTP.2006.367998

Z. Nényei, J. Niess, W. Lerch, W. Dietl, P. Timans, P. Pichler

{"title":"Pattern Effects with the Mask off...","authors":"Z. Nényei, J. Niess, W. Lerch, W. Dietl, P. Timans, P. Pichler","doi":"10.1109/RTP.2006.367998","DOIUrl":"https://doi.org/10.1109/RTP.2006.367998","url":null,"abstract":"Pattern effects during RTP have been extensively studied for the last 15 years, but have only recently attained focus in device production. The detection and the evaluation of pattern effects are in most cases difficult. Different coatings on the Si wafers hinder direct measurements and indirect evaluations. Production people recognize pattern effect frequently as a malfunction in temperature control. People in process integration can not easily separate the main root cause of broader parameter distribution in electrical parameters in final test due to the overlapping results of CD variations in lithography and those of the microloading effects in RTP, CMP and plasma etch processing. In this paper the authors clarify the versatile realisations of pattern effects in different geometrical fractals and for different coating materials. The authors describe new methods for easy evaluation of pattern effects in production. An inherent solution to eliminate pattern effects in dual side heated RTP is to create a (hot) black body cavity at the frontside of the production wafer. This can be achieved by positioning an additional Si wafer (called hot shield) near the frontside of the production wafer. This arrangement allows 150 K/s ramp rate and dramatically reduces intra-die variations compared to a process where a wafer is heated without the hot shield at the same ramp up rate. The enhanced thermal mass with the hot shield results in slightly longer \"peak time\" for spike annealing. The modelling results show that the actual longer peak time can easily be compensated by slightly reduced maximum temperature and by changed implant parameters","PeriodicalId":114586,"journal":{"name":"2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133049658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

The Progress in Ultra Thin Gate Dielecgtric for System LSI Application 用于系统LSI的超薄栅极电介质的研究进展

2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2006-10-01 DOI: 10.1109/RTP.2006.367982

J. Yugami, S. Tsujikawa, M. Inoue, M. Mizutani, T. Hayashi, Y. Nishida, H. Umeda

引用次数: 0

Non-Contact, Non-Destructive Characterization of Crystal Quality in Ultra-Shallow ion Implanted Silicon Wafers Before and after Annealing 超浅离子注入硅片退火前后的非接触、非破坏性晶体质量表征

2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2006-10-01 DOI: 10.1109/RTP.2006.367993

M. Yoshimoto, H. Nishigaki, H. Harima, T. Isshiki, K. Kang, W. Yoo

{"title":"Non-Contact, Non-Destructive Characterization of Crystal Quality in Ultra-Shallow ion Implanted Silicon Wafers Before and after Annealing","authors":"M. Yoshimoto, H. Nishigaki, H. Harima, T. Isshiki, K. Kang, W. Yoo","doi":"10.1109/RTP.2006.367993","DOIUrl":"https://doi.org/10.1109/RTP.2006.367993","url":null,"abstract":"Ultraviolet (UV) Raman scattering spectroscopy provides new insight into the recrystallization process versus depth in the ultra-shallow ion-implanted layer not provided by conventional characterization techniques. The recrystallization process in ultra-shallow B-implanted layers on silicon was characterized by Raman scattering spectroscopy under UV excitation. To recrystallize damaged layers after ion implantation, rapid annealing processes were carried out in both a millisecond flash annealing system and a spike annealing system. The effectiveness of this anneal is compared to Raman evaluation of non-USJ, B-implanted layers with hundred nanometer scale depth thoroughly annealed in a near isothermal hot wall chamber. By making use of the shallow penetration depth of UV light in silicon, we can distinguish Raman signals of single-crystalline, deficiently recrystallized, as well as amorphous silicon. Although, a clear, single crystalline lattice image was observed by transmission electron microscopy (TEM), the UV-Raman spectroscopy also sensitively detected deterioration of the lattice, but in nondestructive testing","PeriodicalId":114586,"journal":{"name":"2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130094510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Non-Destructive Characterization of Metal-Semiconductor Interface by Raman Scattering 金属-半导体界面的拉曼散射无损表征

2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2006-10-01 DOI: 10.1109/RTP.2006.367990

H. Harima

引用次数: 0

Titanium Silicide Formation: Process Characterization Using Single Wafer Rapid Thermal Furnace System 硅化钛的形成:单晶片快速热炉系统的工艺表征

2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2006-10-01 DOI: 10.1109/RTP.2006.368009

D. Garroux, M. Ouaknine, I. J. Malik, T. Fukada, M. Odera, T. Ishigaki, T. Ueda, W. Yoo

引用次数: 0

Millisecond Annealing with Flashlamps: Tool and Process Challenges 闪光灯毫秒退火:工具和工艺挑战

2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2006-10-01 DOI: 10.1109/RTP.2006.367981

T. Gebel, L. Rebohle, R. Fendler, W. Hentsch, W. Skorupa, M. Voelskow, W. Anwand, R. Yankov

{"title":"Millisecond Annealing with Flashlamps: Tool and Process Challenges","authors":"T. Gebel, L. Rebohle, R. Fendler, W. Hentsch, W. Skorupa, M. Voelskow, W. Anwand, R. Yankov","doi":"10.1109/RTP.2006.367981","DOIUrl":"https://doi.org/10.1109/RTP.2006.367981","url":null,"abstract":"Sub-second annealing is one of the key issues to meet the requirements of the 45 nm technology node according to the ITRS roadmap. Therefore, over the past decade there has been great interest in techniques such as laser and flash lamp annealing (FLA). In addition, advanced ultra-fast annealing shows promise for technologies that are not directly related to Si device processing. The main reason for using FLA in alternative applications is the reduced thermal budget because of the short annealing time, which enables one to achieve high temperatures (> 500degC) in the near-surface region while keeping the substrate bulk relatively cold. This is of particularly high importance for the development of novel polymer-based electronics and flexible solar cell technologies, where the substrates cannot withstand temperatures in excess of 150degC. An overview of theoretical simulations and related results from FLA experiments for a variety of layered systems is given. The influence of the flash duration and intensity on the heat distribution and the resulting physical properties is considered. Design and performance issues of the FLA tools depending on the specific uses and technical requirements are addressed. Furthermore, topics covered include high-throughput applications e.g. for roll-to-roll production of polymer substrates. Results of a prototype tool for multi-flash processing up to a frequency of 1 Hz using a pulse duration of 1 ms are also discussed","PeriodicalId":114586,"journal":{"name":"2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"4 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115851492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 19