Non-Destructive Characterization of Metal-Semiconductor Interface by Raman Scattering

2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2006-10-01 DOI:10.1109/RTP.2006.367990

H. Harima

引用次数: 0

Abstract

Raman scattering is a very powerful tool for micro- and nano-metric scale characterization of precise device manufacturing process in nondestructive and noncontact way. As an example, this paper describes interface interactions between metallic electrodes and Si characterized by Raman scattering

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金属-半导体界面的拉曼散射无损表征

拉曼散射是一种非常有力的工具，可以在微纳米尺度上无损、非接触地表征精密器件的制造过程。作为一个例子，本文描述了用拉曼散射表征的金属电极与硅之间的界面相互作用

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors

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