金属-半导体界面的拉曼散射无损表征

2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2006-10-01 DOI:10.1109/RTP.2006.367990

H. Harima

{"title":"金属-半导体界面的拉曼散射无损表征","authors":"H. Harima","doi":"10.1109/RTP.2006.367990","DOIUrl":null,"url":null,"abstract":"Raman scattering is a very powerful tool for micro- and nano-metric scale characterization of precise device manufacturing process in nondestructive and noncontact way. As an example, this paper describes interface interactions between metallic electrodes and Si characterized by Raman scattering","PeriodicalId":114586,"journal":{"name":"2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Non-Destructive Characterization of Metal-Semiconductor Interface by Raman Scattering\",\"authors\":\"H. Harima\",\"doi\":\"10.1109/RTP.2006.367990\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Raman scattering is a very powerful tool for micro- and nano-metric scale characterization of precise device manufacturing process in nondestructive and noncontact way. As an example, this paper describes interface interactions between metallic electrodes and Si characterized by Raman scattering\",\"PeriodicalId\":114586,\"journal\":{\"name\":\"2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RTP.2006.367990\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RTP.2006.367990","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

拉曼散射是一种非常有力的工具，可以在微纳米尺度上无损、非接触地表征精密器件的制造过程。作为一个例子，本文描述了用拉曼散射表征的金属电极与硅之间的界面相互作用

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Non-Destructive Characterization of Metal-Semiconductor Interface by Raman Scattering

Raman scattering is a very powerful tool for micro- and nano-metric scale characterization of precise device manufacturing process in nondestructive and noncontact way. As an example, this paper describes interface interactions between metallic electrodes and Si characterized by Raman scattering

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2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors

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