不同退火条件下硅化镍形成后Si(001)上薄镍层界面的高分辨率透射电镜研究

2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2006-10-01 DOI:10.1109/RTP.2006.367991

T. Isshiki, K. Nishio, T. Sasaki, H. Harima, M. Yoshimoto, T. Fukada, W. Yoo

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引用次数: 2

摘要

用高分辨率透射电镜观察了在硅(100)衬底上溅射镍层热处理后形成的硅化镍的局部结构。在498K热处理后的溅射试样中，在Ni (Ni2Si)和Si衬底之间的界面处发现了一层薄层。该层是硅化的初始阶段，似乎是非萤石型NiSi2。在600K左右退火时，NiSi2相消失，NiSi相主导生长。在NiSi/Si的界面上，由于NiSi和Si之间的晶格失配在界面的几个原子层内被晶格畸变所吸收，所以晶格看起来很光滑。通过晶格条纹的傅里叶分析，还鉴定了生长NiSi层中残留的Ni3Si2和Ni2Si相

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High-Resolution Transmission Electron Microscopy of Interfaces between thin Nickel Layers on Si(001) After Nickel Silicide Formation under Various Annealing Conditions

Local structures of nickel silicide formed by heat treatment of a nickel layer sputtered on silicon (100) substrate were observed by high-resolution transmission electron microscopy. In the specimen as-sputtered and after heat treatment at 498K, a thin layer was found at the interface between Ni (Ni2Si) and the Si substrate. The layer was an initial phase of silicidation and seems to be non-fluorite type NiSi2. When annealed around 600K, the NiSi2 phase disappeared and a NiSi phase grew dominantly. At the interface of NiSi/Si, the crystal lattices appeared smooth, because the lattice mismatch between NiSi and Si was absorbed by lattice distortion within a few atomic layers of the interface. The Ni3Si2 and Ni2Si phases remaining in the grown NiSi layer were also identified by Fourier analysis of the lattice fringe

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2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors

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