Millisecond Annealing with Flashlamps: Tool and Process Challenges

T. Gebel, L. Rebohle, R. Fendler, W. Hentsch, W. Skorupa, M. Voelskow, W. Anwand, R. Yankov
{"title":"Millisecond Annealing with Flashlamps: Tool and Process Challenges","authors":"T. Gebel, L. Rebohle, R. Fendler, W. Hentsch, W. Skorupa, M. Voelskow, W. Anwand, R. Yankov","doi":"10.1109/RTP.2006.367981","DOIUrl":null,"url":null,"abstract":"Sub-second annealing is one of the key issues to meet the requirements of the 45 nm technology node according to the ITRS roadmap. Therefore, over the past decade there has been great interest in techniques such as laser and flash lamp annealing (FLA). In addition, advanced ultra-fast annealing shows promise for technologies that are not directly related to Si device processing. The main reason for using FLA in alternative applications is the reduced thermal budget because of the short annealing time, which enables one to achieve high temperatures (> 500degC) in the near-surface region while keeping the substrate bulk relatively cold. This is of particularly high importance for the development of novel polymer-based electronics and flexible solar cell technologies, where the substrates cannot withstand temperatures in excess of 150degC. An overview of theoretical simulations and related results from FLA experiments for a variety of layered systems is given. The influence of the flash duration and intensity on the heat distribution and the resulting physical properties is considered. Design and performance issues of the FLA tools depending on the specific uses and technical requirements are addressed. Furthermore, topics covered include high-throughput applications e.g. for roll-to-roll production of polymer substrates. Results of a prototype tool for multi-flash processing up to a frequency of 1 Hz using a pulse duration of 1 ms are also discussed","PeriodicalId":114586,"journal":{"name":"2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"4 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RTP.2006.367981","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19

Abstract

Sub-second annealing is one of the key issues to meet the requirements of the 45 nm technology node according to the ITRS roadmap. Therefore, over the past decade there has been great interest in techniques such as laser and flash lamp annealing (FLA). In addition, advanced ultra-fast annealing shows promise for technologies that are not directly related to Si device processing. The main reason for using FLA in alternative applications is the reduced thermal budget because of the short annealing time, which enables one to achieve high temperatures (> 500degC) in the near-surface region while keeping the substrate bulk relatively cold. This is of particularly high importance for the development of novel polymer-based electronics and flexible solar cell technologies, where the substrates cannot withstand temperatures in excess of 150degC. An overview of theoretical simulations and related results from FLA experiments for a variety of layered systems is given. The influence of the flash duration and intensity on the heat distribution and the resulting physical properties is considered. Design and performance issues of the FLA tools depending on the specific uses and technical requirements are addressed. Furthermore, topics covered include high-throughput applications e.g. for roll-to-roll production of polymer substrates. Results of a prototype tool for multi-flash processing up to a frequency of 1 Hz using a pulse duration of 1 ms are also discussed
闪光灯毫秒退火:工具和工艺挑战
根据ITRS路线图,亚秒退火是满足45纳米技术节点要求的关键问题之一。因此,在过去十年中,人们对激光和闪光灯退火(FLA)等技术产生了极大的兴趣。此外,先进的超快速退火显示出与硅器件加工不直接相关的技术的前景。在替代应用中使用FLA的主要原因是由于退火时间短而减少了热预算,这使得人们能够在近表面区域实现高温(> 500℃),同时保持衬底体相对较冷。这对于新型聚合物电子产品和柔性太阳能电池技术的发展尤其重要,因为衬底不能承受超过150摄氏度的温度。概述了各种层状系统的理论模拟和FLA实验的相关结果。考虑了闪蒸时间和闪蒸强度对材料热分布和物理性能的影响。FLA工具的设计和性能问题取决于具体的用途和技术需求。此外,涵盖的主题还包括高通量应用,例如聚合物基板的卷对卷生产。还讨论了脉冲持续时间为1ms的频率高达1hz的多闪处理原型工具的结果
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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