用于系统LSI的超薄栅极电介质的研究进展

2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2006-10-01 DOI:10.1109/RTP.2006.367982

J. Yugami, S. Tsujikawa, M. Inoue, M. Mizutani, T. Hayashi, Y. Nishida, H. Umeda

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摘要

降低EOT是保持摩尔定律的关键挑战，特别是在低功耗lsi中。作为传统SiO2的备选栅极介电材料是富n - SiON和高k。然而，在每种情况下，我们确实需要在系统LSI应用中使用Vth调优工具。F掺入技术在富n和高k的v次调谐中都是有效的。此外，从可靠性方面来看，F合并是有希望的

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The Progress in Ultra Thin Gate Dielecgtric for System LSI Application

EOT reduction is a key challenge to keep the Moore's law, especially in low power LSIs. Nice candidates of gate dielectric as alternative to conventional SiO2 are N-rich SiON and high-K. However, in each case, we truly need tuning tools of Vth in the system LSI applications. F incorporation technique should be effective in Vth tuning with both N-rich SiON and high-K. Moreover, F incorporation is promising from reliability aspect

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2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors

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