ECS Solid State Letters最新文献

{"title":"Thermal Stability Improvement of Sb2Te Material with Rapid Phase Transition","authors":"Yun Meng, Xinglong Ji, P. Han, Zhitang Song, Wangyang Zhou, Wen-Yu Guo, Bo Qian, Liangcai Wu","doi":"10.1149/2.0031501SSL","DOIUrl":"https://doi.org/10.1149/2.0031501SSL","url":null,"abstract":"In this paper, phase change characteristics of SiO2-doped Sb2Te materials were  \u0000\tsystematically investigated. It was found that phase change properties of Sb2Te were  \u0000\tremarkably improved through SiO2 addition. The crystallization temperature is  \u0000\tenhanced obviously, showing a relatively good thermal stability. With increasing  \u0000\tconcentration of SiO2, the temperature for 10-yr data retention increased to 131  \u0000\tdegrees C. In addition, the SiO2-doped Sb2Te based device remains a fast operation  \u0000\tspeed (10 ns). XRD and TEM results suggest the incorporation of SiO2 suppress the  \u0000\tcrystallization of Sb2Te and then smaller grain size obtained, which benefits to the  \u0000\toperation speed and power consumption. (C) 2014 The Electrochemical Society. All  \u0000\trights reserved.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"37 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88177568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stretchable Organic Thin-Film Transistors Fabricated on Elastomer Substrates Using Polyimide Stiff-Island Structures","authors":"Soon-Won Jung, Jeong-Seon Choi, J. Koo, C. Park, B. Na, Jiyoung Oh, Sang Seok Lee, H. Chu","doi":"10.1149/2.0011501SSL","DOIUrl":"https://doi.org/10.1149/2.0011501SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"6 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73821596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Formation of ITO Nanowires Using Conventional Magnetron Sputtering","authors":"N. Yamamoto, K. Morisawa, J. Murakami, Nakatani Yasuhiro","doi":"10.1149/2.0131407SSL","DOIUrl":"https://doi.org/10.1149/2.0131407SSL","url":null,"abstract":"ITO nanowires could be grown in oxygen-free Ar sputtering gas directly after the formation of ITO films with thicknesses of 10–50 nm using conventional magnetron sputtering. Growth of nanorods occurred at substrate temperatures of about 100°C and higher, whereas nanowires with lengths of 1–10 μm and diameters of roughly 20–200 nm were formed at about 175°C and above. The diameter, length and density of the nanowires could be controlled by varying the sputtering time, substrate temperature, and SnO2 content in the ITO sputtering target.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"10 1","pages":"84"},"PeriodicalIF":0.0,"publicationDate":"2014-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78556144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Silicon Oxide Passivation of Single-Crystalline CVD Diamond Evaluated by the Time-of-Flight Technique","authors":"K. Kovi, S. Majdi, M. Gabrysch, J. Isberg","doi":"10.1149/2.004405ssl","DOIUrl":"https://doi.org/10.1149/2.004405ssl","url":null,"abstract":"Diamond is a promising semiconductor material for high power, high voltage, high temperature and high frequency applications due to its remarkable material properties: it has the highest thermal conductivity, it is the hardest material, chemically inert, radiation hard and has the widest transparency in the electromagnetic spectrum. It also exhibits excellent electrical properties like high breakdown field, high mobilities and a wide bandgap. Hence, it may find applications in extreme conditions out of reach for conventional semiconductor materials, e.g. in high power density systems, high temperature conditions, automotive and aerospace industries, and space applications. With the recent progress in the growth of high purity single-crystalline CVD diamond, the realization of electronic devices is now possible. Natural and HPHT diamonds inevitably have too high a concentration of impurities and defects for electrical applications. To develop efficient electronic devices based on diamond, it is crucial to understand charge transport properties. Time-of-flight is one of the most powerful methods used to study charge transport properties like mobility, drift velocity and charge collection efficiency in highly resistive semiconductors, such as diamond. For commercial diamond devices to become a reality, it is necessary to have an effective surface passivation since the passivation determines the ability of a device to withstand high surface electric fields. Surface passivation studies on intrinsic SC-CVD diamond using materials like silicon oxide, silicon nitride and high-k materials have been conducted and observations reveal an increase in measured hole mobilities. Planar MOS capacitor structures form the basic building block of MOSFETs. Consequently, the understanding of MOS structures is crucial to make MOSFETs based on diamond. Planar MOS structures with aluminum oxide as gate dielectric were fabricated on boron doped diamond. The phenomenon of inversion was observed for the first time in diamond. In addition, low temperature hole transport in the range of 10-80 K has been investigated and the results are used to identify the type of scattering mechanisms affecting hole transport at these temperatures.To utilize the potential of diamonds properties and with diamond being the hardest and most chemically inert material, new processing technologies are needed to produce devices for electrical, optical or mechanical applications. Etching of diamond is one of the important processing steps required to make devices. Achieving an isotropic etch with a high etch rate is a challenge. Semi-isotropic etch profiles with smooth surfaces were obtained by using anisotropic etching technique by placing diamond samples in a Faraday cage and etch rates of approximately 80 nm/min were achieved.Valleytronics, which is a novel concept to encode information based on the valley quantum number of electrons has been investigated for the first time in diamond. Valley-pol","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"25 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77831727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multi-Stacked Layer in the Solution Processing of HfO2 Films to Obtain Superior Electrical Performance in Liquid Crystal Devices","authors":"Seon Yeong Kim, Hong-Gyu Park, Min-Jae Cho, D. Yang, Dai‐Hyun Kim, Dae‐Shik Seo","doi":"10.1149/2.004404SSL","DOIUrl":"https://doi.org/10.1149/2.004404SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"45 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77586344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Light-Induced Electrochemical Deposition of Ni for Si Solar Cell Processing","authors":"D. H. V. Dorp, J. Sniekers, G. Bonneux, L. Tous, R. Russell, J. Szlufcik, H. Philipsen","doi":"10.1149/2.006404SSL","DOIUrl":"https://doi.org/10.1149/2.006404SSL","url":null,"abstract":"This work outlines the general electrochemical features of the Ni light-induced deposition process. Typical observations for the deposition on textured solar cells are discussed and compared to planar n-Si (100) electrodes. The electrochemical measurements clearly show that after nucleation, Ni-on-Ni deposition is favored over Ni-on-Si, resulting in hemispherical growth. This observation is attributed to a kinetic effect and may be a disadvantage for the growth of ultra-thin contacting layers. In addition, the simultaneous metallization of fingers and busbars shows a significant non-uniformity due to an inevitable variation in current distribution which leads to an enhanced deposition rate for the narrowest features.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"46 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84559183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Temperature Variation of Photoluminescence from Mn Doped Spinel Crystals for a Fluorescence Thermometer Application","authors":"T. Sakuma, Shunsuke Minowa, T. Katsumata, S. Komuro, H. Aizawa","doi":"10.1149/2.0011408SSL","DOIUrl":"https://doi.org/10.1149/2.0011408SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"5 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85663620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improved Surface Passivation Using Dual-Layered a-Si:H for Silicon Heterojunction Solar Cells","authors":"Kyu-Sung Lee, C. Yeon, S. Yun, K. Jung, J. Lim","doi":"10.1149/2.001404SSL","DOIUrl":"https://doi.org/10.1149/2.001404SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"36 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85875149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hole Mobility Enhancement of GeSn/Ge pMOSFETs with an Interlayer Formed by Sn-Assisted Oxynitridation","authors":"Lei Liu, R. Liang, Jing Wang, Jun Xu","doi":"10.1149/2.0071411SSL","DOIUrl":"https://doi.org/10.1149/2.0071411SSL","url":null,"abstract":"The GeSn/Ge pMOSFETs with a novel GeSnON interlayer formed by the Sn-assisted oxynitridation method were demonstrated and analysed. The introduced GeSn layer onto the Ge substrates enables the nitridation process to be performed at low temperatures. The oxynitridation of the GeSn layer can further improve the interface properties of GeSn/Ge MOS capacitors compared with the direct nitridation method. The fabricated GeSn/Ge pMOSFETs with the GeSnON interlayer exhibit more than 4 times hole mobility enhancement over Si universal mobility. The effective passivation of the GeSnON interlayer and the GeSn layer in channel region may account for the hole mobility enhancement.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"86 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80896832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Pd Nanoparticles Supported on PDDA-Functionalized Ti4O7 as an Effective Catalyst for Formic Acid Electrooxidation","authors":"Huiru Zhao, Qinghu Tang, Yi Wang, Tao Qi, Xin Wang","doi":"10.1149/2.0051409SSL","DOIUrl":"https://doi.org/10.1149/2.0051409SSL","url":null,"abstract":"Pd catalysts supported on carbon black and Ti4O7 were prepared and used as electrocatalysts for formic acid electrooxidation. The structure and morphology were characterized by XRD and TEM. CV results show that Pd/Ti4O7 possesses a higher catalytic activity than Pd/C. XPS analyzes suggest that the higher content of metallic Pd caused by Ti4O7 contributes to the better catalytic performance. Based on the good electrocatalytic performance of Pd/Ti4O7, Pd catalyst supported on PDDA-functionalized Ti4O7 was prepared and exhibited a better catalytic activity. The improvement results from the further increase of metallic Pd content due to the presence of PDDA. (C) 2014 The Electrochemical Society. All rights reserved.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80108108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}