Thermal Stability Improvement of Sb2Te Material with Rapid Phase Transition

Abstract

In this paper, phase change characteristics of SiO2-doped Sb2Te materials were  systematically investigated. It was found that phase change properties of Sb2Te were  remarkably improved through SiO2 addition. The crystallization temperature is  enhanced obviously, showing a relatively good thermal stability. With increasing  concentration of SiO2, the temperature for 10-yr data retention increased to 131  degrees C. In addition, the SiO2-doped Sb2Te based device remains a fast operation  speed (10 ns). XRD and TEM results suggest the incorporation of SiO2 suppress the  crystallization of Sb2Te and then smaller grain size obtained, which benefits to the  operation speed and power consumption. (C) 2014 The Electrochemical Society. All  rights reserved.