ECS Solid State Letters最新文献

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Self-Aligned Fin-On-Oxide (FOO) FinFETs for Improved SCE Immunity and Multi-VTH Operation on Si Substrate 自对准Fin-On-Oxide (FOO) finfet用于改善SCE抗扰度和在Si衬底上的多vth操作
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0071504SSL
Xiaolong Ma, H. Yin, Peizhen Hong, Weijia Xu
{"title":"Self-Aligned Fin-On-Oxide (FOO) FinFETs for Improved SCE Immunity and Multi-VTH Operation on Si Substrate","authors":"Xiaolong Ma, H. Yin, Peizhen Hong, Weijia Xu","doi":"10.1149/2.0071504SSL","DOIUrl":"https://doi.org/10.1149/2.0071504SSL","url":null,"abstract":"The paper proposed a simple and novel approach to fabricate Fin-On-Oxide (FOO) FinFETs on silicon (Si) substrates for improved electrical characteristics in scaled devices. Based on conventional bulk-Si FinFET integration flow, a special step of a fin notch etching is performed, followed by a process of liner oxidation and isolation-oxide filling and recess. The fin above the notch is physically isolated from the substrate and turns into a self-aligned FOO structure. The fabricated p-type FOO FinFETs have demonstrated excellent short-channel effect (SCE) characteristics with subthreshold slope (SS) of 69 mV/dec and drain-induced barrier lowering (DIBL) of 22 mV/V for a physical gate length (LG) of 27 nm. For 14 nm devices, SS of 86 mV/dec and DIBL of 106 mV/V have been achieved, which are much better than those of the bulk-silicon FinFET counterpart with similar process. Meanwhile, the steady threshold voltage (VTH) shifting by the substrate biasing is realized in the FOO FinFET without performance degradations. The linearity of the VTH on the bias voltage is −6 mV/V. The self-aligned FOO-FinFET with a simple process provides a promising method to improve the SCE immunity as well as provides the multi-VTH operation for the scaled FinFET on Si substrates for future ultra-low power circuit applications. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0071504ssl] All rights reserved.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"92 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74739523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Epitaxial Ge1−xSnx Layers Grown by Metal-Organic Chemical Vapor Deposition Using Tertiary-butyl-germane and Tri-butyl-vinyl-tin 叔丁基日耳曼和三丁基乙烯基锡金属-有机化学气相沉积制备外延层Ge1−xSnx
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0041508SSL
Yuki Inuzuka, S. Ike, T. Asano, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima
{"title":"Epitaxial Ge1−xSnx Layers Grown by Metal-Organic Chemical Vapor Deposition Using Tertiary-butyl-germane and Tri-butyl-vinyl-tin","authors":"Yuki Inuzuka, S. Ike, T. Asano, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima","doi":"10.1149/2.0041508SSL","DOIUrl":"https://doi.org/10.1149/2.0041508SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"35 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74227708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Quantum Dot Light-Emitting Diodes for Uniform Eight-Segment Displays 统一八段显示用量子点发光二极管
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0041505SSL
Jia Zhao, Yu Zhang, Xiaoyu Zhang, Yu Wang, Siyao Yu, Wenzhu Gao, H. Chu, Yiding Wang, Jun Zhao, William W. Yu
{"title":"Quantum Dot Light-Emitting Diodes for Uniform Eight-Segment Displays","authors":"Jia Zhao, Yu Zhang, Xiaoyu Zhang, Yu Wang, Siyao Yu, Wenzhu Gao, H. Chu, Yiding Wang, Jun Zhao, William W. Yu","doi":"10.1149/2.0041505SSL","DOIUrl":"https://doi.org/10.1149/2.0041505SSL","url":null,"abstract":"Experimental Chemicals.— Cadmium oxide (CdO, 99.998%), selenium (Se, 99.999%), 1-octadecene (ODE, 90%), oleic acid (OA, 90%), sodium hydroxide (NaOH, 98%), zinc acetate (Zn(CH3COO)2, 99.98%) and octadecylamine (ODA, 98%) were purchased from Alfa Aesar. Trioctylphosphine oxide (TOPO, 90%), hexadecylamine (HDA, 90%) and trioctylphosphorus (TOP, 97%) were purchased from SigmaAldrich. Zinc oxide (ZnO, 99.99%) and sulfur (S, 99.99%) were purchased from Aladdin. All organic solvents were purchased from Sigma-Aldrich. The chemicals were used directly without further treatment.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84269719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Investigation on Hydrothermal Growth of a-Plane ZnO Using Epitaxial Lateral Overgrowth 外延横向过生长法水热生长a-平面ZnO的研究
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0011503SSL
Pyunghee Son, K. Baik, Soohwan Jang
{"title":"Investigation on Hydrothermal Growth of a-Plane ZnO Using Epitaxial Lateral Overgrowth","authors":"Pyunghee Son, K. Baik, Soohwan Jang","doi":"10.1149/2.0011503SSL","DOIUrl":"https://doi.org/10.1149/2.0011503SSL","url":null,"abstract":"The growth mechanism and the crystallinity of hydrothermally synthesized nonpolar a-plane ZnO (a-ZnO) on a-plane GaN template were investigated by using epitaxial lateral overgrowth (ELO) patterns parallel or perpendicular to the c-axis direction. Due to the anisotropic growth rates along the specific crystallographic directions, lateral overgrowth of a-ZnO was observed only for ZnO grown on the ELO stripe patterns perpendicular to the c-axis direction. In X-ray diffraction analysis, a-ZnO grown on the c-axis parallel patterns had smaller FWHM values of the X-ray rocking curves along the X-ray in-beam orientations in the c- and the m-axis","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"8 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82400117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Transfer Printed Microcell Array for Stretchable Organic Solar Cells 可拉伸有机太阳能电池的转移印刷微电池阵列
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0011511SSL
Na-Yong Kang, Wonjung Choi, Hogyoung Kim, Chang Su Kim, S. Jo
{"title":"Transfer Printed Microcell Array for Stretchable Organic Solar Cells","authors":"Na-Yong Kang, Wonjung Choi, Hogyoung Kim, Chang Su Kim, S. Jo","doi":"10.1149/2.0011511SSL","DOIUrl":"https://doi.org/10.1149/2.0011511SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"76 1","pages":"88"},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86881587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Direct Voltammetric Determination of Dobutamine in Pharmaceutical Samples Using Multiwall Carbon Nanotubes Paste Electrode 多壁碳纳米管膏状电极直接伏安法测定药物样品中的多巴酚丁胺
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0021507SSL
M. Fouladgar
{"title":"Direct Voltammetric Determination of Dobutamine in Pharmaceutical Samples Using Multiwall Carbon Nanotubes Paste Electrode","authors":"M. Fouladgar","doi":"10.1149/2.0021507SSL","DOIUrl":"https://doi.org/10.1149/2.0021507SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"2 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89224883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Distribution of Luminescence Centers and Trapping Centers in Ba13Al22Si10O66: Eu2+, Tm3+ Ba13Al22Si10O66: Eu2+, Tm3+中发光中心和俘获中心的分布
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0051505SSL
W. Shen, Xuhui Xu, Buhao Zhang, Ting Wang, J. Qiu, Xue Yu
{"title":"Distribution of Luminescence Centers and Trapping Centers in Ba13Al22Si10O66: Eu2+, Tm3+","authors":"W. Shen, Xuhui Xu, Buhao Zhang, Ting Wang, J. Qiu, Xue Yu","doi":"10.1149/2.0051505SSL","DOIUrl":"https://doi.org/10.1149/2.0051505SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"61 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86801414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
The Effect of Reduced Oxidation Process Using Ammonia Annealing and Deposited Oxides on 4H-SiC Metal-Oxide-Semiconductor Structure 氨退火还原氧化工艺及沉积氧化物对4H-SiC金属氧化物半导体结构的影响
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0021509SSL
Changhyun Kim, Suhyeong Lee, J. Moon, Joonhyeon Kim, Hunhee Lee, Hongjeon Kang, Hyun Woo Kim, Jaeyeong Heo, H. Kim
{"title":"The Effect of Reduced Oxidation Process Using Ammonia Annealing and Deposited Oxides on 4H-SiC Metal-Oxide-Semiconductor Structure","authors":"Changhyun Kim, Suhyeong Lee, J. Moon, Joonhyeon Kim, Hunhee Lee, Hongjeon Kang, Hyun Woo Kim, Jaeyeong Heo, H. Kim","doi":"10.1149/2.0021509SSL","DOIUrl":"https://doi.org/10.1149/2.0021509SSL","url":null,"abstract":"aDepartment of Material Science and Engineering, College of Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea bCenter for Energy Efficient Semiconductors, Korea Electrotechnology Research Institute, Changwon, Gyungnam 641-120, Korea cDepartment of Materials Science and Engineering, and Optoelectronics Convergence Research Center, Chonnam National University, Gwangju 500-757, Korea","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"80 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89923469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Nanocrystalline Diamond Deposited on Mo-Modified Re Substrate by Magnetic Field-Assisted Hot Filament Chemical Vapor Deposition 磁场辅助热丝化学气相沉积法在mo修饰的Re衬底上沉积纳米晶金刚石
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0041503SSL
Xiaobin Wu, T. Dai, Zhiming Yu
{"title":"Nanocrystalline Diamond Deposited on Mo-Modified Re Substrate by Magnetic Field-Assisted Hot Filament Chemical Vapor Deposition","authors":"Xiaobin Wu, T. Dai, Zhiming Yu","doi":"10.1149/2.0041503SSL","DOIUrl":"https://doi.org/10.1149/2.0041503SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76898255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Performance Variability Projection of InGaN/AlGaN/GaN E-mode HEMT for RF Switch Application 用于射频开关的InGaN/AlGaN/GaN e模HEMT的性能变异性投影
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0051510SSL
S. Majumdar, D. Biswas
{"title":"Performance Variability Projection of InGaN/AlGaN/GaN E-mode HEMT for RF Switch Application","authors":"S. Majumdar, D. Biswas","doi":"10.1149/2.0051510SSL","DOIUrl":"https://doi.org/10.1149/2.0051510SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"29 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73070295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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