ECS Solid State Letters最新文献

{"title":"Acidic Buffer-Free Organic Solar Cells Using Vanadium-Doped Indium Oxide Anodes","authors":"Hye-Min Lee, Yong-Jin Noh, Seok‐In Na, Han‐Ki Kim","doi":"10.1149/2.0041412SSL","DOIUrl":"https://doi.org/10.1149/2.0041412SSL","url":null,"abstract":"We developed V-doped In2O3 (IVO) films to use as a bufferand anode-integrated electrode for acidic poly (3,4-ethylene dioxylene thiophene):poly (styrene sulfonic acid) (PEDOT:PSS) buffer layer free-organic solar cells (OSCs). By co-sputtering of V2O5 and In2O3 targets and rapid thermal annealing, we obtained IVO films with a sheet resistance of 41.7 /square, and an optical transmittance of 80.4%, and a work function of 5.0 eV. The P3HT:PCBM-based OSCs fabricated on an IVO anode successfully functioned without an acidic PEDOT:PSS buffer layer and showed a PCE of 2.91%, which was much higher than that (1.068%) of a PEDOT:PSS free OSC with an ITO anode. The elimination of the acidic buffer layer in OSCs enabled us to produce the reliable OSCs with decreased coating steps. © 2014 The Electrochemical Society. [DOI: 10.1149/2.0041412ssl] All rights reserved.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"8 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85817264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electro-Deposition of Thin Si and Ge Films Based on Ballistic Hot Electron Injection","authors":"N. Koshida, A. Kojima, T. Ohta, Romain Mentek, B. Gelloz, N. Mori, J. Shirakashi","doi":"10.1149/2.002405SSL","DOIUrl":"https://doi.org/10.1149/2.002405SSL","url":null,"abstract":"Apart from the conventional dry process such as chemical vapor deposition (CVD), some electrochemical approaches have been conducted to fabricate thin Si and Ge films. The liquids used to date for electro-deposition of those films are nonaqueous organic electrolytes, 1‐4 tetrachloride solutions (SiCl4, GeCl4), 5,6 ionic liquids, 7‐13 aqueous solutions, 14 and molten salt solutions. 15‐17 In every case, however, deposited films show non-uniform, porous, or contaminant features in structure and composition. Nanocrystalline silicon (nc-Si) diode acts as a planar cold cathode which uniformly emits ballistic hot electrons. 18 The nc-Si emitter is composed of a thin Au (10 nm), an anodized nc-Si layer (∼1 μm), a","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"60 1","pages":"57"},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79998586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural Instability in Amorphous In-Ga-Zn-O Films Investigated by Mechanical Stress Analysis","authors":"Ju-Young Cho, Tae-Youl Yang, Yong-Jin Park, Yoo‐Yong Lee, Young‐Chang Joo","doi":"10.1149/2.004406SSL","DOIUrl":"https://doi.org/10.1149/2.004406SSL","url":null,"abstract":"The use of amorphous materials as key functional materials in various electronic devices continues to increase because they exhibit superior flexibility, adequate processability and reasonable performance. However, because the amorphous phase is metastable structure compared with the crystalline phase, its properties may drift over time and cause instability when applied in devices. Therefore, an understanding of the structural stability of amorphous materials is a key step in the fabrication of stable electronic devices. Amorphous In-Ga-Zn-O (a-IGZO) has been actively employed in electronic applications due to its high electron mobility and high stability of amorphous structure. 1 However, if a-IGZO is utilized as a thin film structure in electronic applications, high structural stability of a-IGZO can be hindered by the effect of surface. As thinner the film, higher the surface-to-volume ratio in film, therefore effect of the surface instability will be more significant: unconstrained bonds in surface are reported to be in high mobility of atoms, 2 and distinct coordination distributions in surface of amorphous Al2O3 films affect","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"63 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79453410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A ZnTaOx Based Resistive Switching Random Access Memory","authors":"K. Zheng, J. L. Zhao, K. S. Leck, K. Teo, E. Yeo, X. W. Sun","doi":"10.1149/2.0101407SSL","DOIUrl":"https://doi.org/10.1149/2.0101407SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87224709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of Rapid Thermal Oxidation at Ultrahigh-Temperatures on Oxygen Precipitation Behavior in Czochralski-Silicon Crystals II","authors":"K. Araki, S. Maeda, Haruo Sudo, Tatsuhiko Aoki, K. Izunome","doi":"10.1149/2.010409SSL","DOIUrl":"https://doi.org/10.1149/2.010409SSL","url":null,"abstract":"Oxygen precipitates (OPs) in a Czochralski silicon (Cz-Si) wafer can degrade the performance of semiconductor devices if they are in the active region of the Si wafer, i.e., the surface layer. On the other hand, they can improve device fabrication yield through their ability to enhance impurity gettering and through mechanical strengthening, both of which are important characteristics for semiconductor device fabrication. 1,2 Thus, the OPs must be controlled in an appropriate manner depending on the structure of the intended semiconductor devices and the production process employed. More precise and uniform control of OPs in Si wafers will be a significant factor for future advanced semiconductor devices. To understand this very important issue, we previously investigated the re-formation effect of OP nuclei using ultrahigh-temperature rapid thermal oxidation (RTO), at over 1300 ◦ C, and achieved wide and precise controllability of new OP nuclei. 3 This technique also demonstrated a remarkable ability to eliminate heterogeneity effects such as OP nuclei or related defects in the grown crystal. Ultrahigh-temperature annealing using rapid thermal processing (RTP) has significant advantages in terms of excellent temperature uniformity in the radial direction of the Si wafer as compared to the Cz-Si crystal growth process. As mentioned above, ultrahigh-temperature RTO showed a remarkable ability to control the effects of the OP nuclei. The behavior of OP nuclei in Cz-Si crystals is strongly related to point defects such as vacancies and Si interstitials. 4 Vacancies promote the formation of OP nuclei because these nuclei are formed as a complex between oxygen atoms and vacancies. It is generally known that annealing in an oxygen atmosphere is not a practical way to increase vacancy concentration because Si interstitials are dominant in the Si wafer due to the injection of Si interstitials from the oxidized surface. However, as we previously reported, 3 the behavior of OP nuclei can be controlled by changing the dominant point defects from Si interstitials to vacancies depending on the difference of each thermal equilibrium concentration at ultrahigh temperatures, even though the oxidation atmosphere is used for RTP. Furthermore, in the case of ultrahigh-temperature RTO, it is expected that Si interstitials also exist at high concentration due to the Si surface oxidation even though the dominant point defects are vacancies. Interstitial Si point defects are expected to annihilate vacancy-related defects such as void defects when enough interstitial Si atoms exist. 5 The void defects also influence the semiconductor device performance; therefore, in addition to OP control, annihilating void defects is a very important goal. It is well known that RTP in a nitrogen or argon atmosphere does not effectively annihilate void defects under the surface of the Si wafer. 6‐8 Ultrahigh-temperature RTO would gain a further advantage over RTP in a nitrogen or argon","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"27 1","pages":"114"},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90564463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrochemical Metallization and Trapping/Detrapping Resistive Switching Mechanism in Al/VOx/Cu RRAM","authors":"Kailiang Zhang, Kuo Sun, F. Wang, Yemei Han, Zizhen Jiang, Baolin Wang, Kai Liu, H. Wong","doi":"10.1149/2.0071410SSL","DOIUrl":"https://doi.org/10.1149/2.0071410SSL","url":null,"abstract":"We investigated resistive switching mechanism in Al/VOx/Cu RRAM structure. The temperature dependence of resistance on low resistive state (LRS) and conductive atomic force microscopy (CAFM) measurement confirmed the formation and rupture of Cu conductive filaments (Cu-CF) in VOx dielectric. Cu-CF was formed after a trapping process (HRS→LRS) and ruptured at Schottky junction Al/VOx interface (LRS→HRS) judged by rectification and C-V characteristics of high resistive state (HRS). A model combining trapping/detrapping and Cu-CF formation/rupture is proposed to describe resistive switching mechanism. Based on the combined resistive switching mechanism, an application of multi-level states in Al/AlOx/VOx/Cu device is achieved successfully.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"47 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90564776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Epitaxial Synthesis, Band Offset, and Photoelectrochemical Properties of Cubic Ga2S3 Thin Films on GaAs (111) Substrates","authors":"Hongfei Liu, K. K. A. Antwi, Chin Sheng Chua, J. Huang, S. Chua, D. Chi","doi":"10.1149/2.0021411SSL","DOIUrl":"https://doi.org/10.1149/2.0021411SSL","url":null,"abstract":"Uniform and crack-free cubic Ga2S3 thin films have been epitaxially synthesized on n-GaAs (111) substrates by sulfurization. Atomic-force microscopy revealed that the Ga2S3 surface is dominated by nanoparticles of smaller than 50 nm in diameter. The nanoparticles, clustered into regular triangle structures that hierarchically packaged on GaAs, significantly reduced the reflectance of GaAs. Low-temperature photoluminescence revealed typical acceptor-like defects while X-ray photoemission spectroscopy revealed type-Iheterojunctionwithavalence-bandoffsetof0.6eVfortheGa2S3/GaAsheterostructure.Photoelectrochemicalpropertiesofthe Ga2S3/n-GaAs (111) heterojunction are studied and compared with those of bare n-GaAs (111) substrate in a typical three-electrode","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"8 1","pages":"131"},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90596473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of Position of Exciton-Blocking Layer on Characteristics of Blue Phosphorescent Organic Light-Emitting Diodes","authors":"Sang Ho Rhee, Chang Su Kim, Myungkwan Song, K. Chung, S. Ryu","doi":"10.1149/2.0041410SSL","DOIUrl":"https://doi.org/10.1149/2.0041410SSL","url":null,"abstract":"In this study, we systematically examined the effects of the position of the exciton- blocking layer (EBL) in blue phosphorescent organic light-emitting diodes. The EBL was located either in the front and/or the rear of the emission layer (EML), and its effects to the device performances and electroluminescence spectra were investigated. The width and location of the recombination zone related to the triplet exciton quenching occurred in the devices with/without a front- or rear-EBL resulted in an optical micro-cavity effect in the EL spectrum at approximately 500 nm. The EBLs provided the direct, extra path of charge carriers from the hole transport layer (HTL)/electron transport layer (ETL) to the ETL/HTL through EML, resulting that the device operating voltage did not increase. The device with both front- and rear-placed EBLs exhibited the highest device performance, as triplet exciton quenching did not occur in it at the interface between the HTL/ETL and the EML.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"97 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91052109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tungsten-Doped Indium Oxide Thin Film as an Effective High-Temperature Copper Diffusion Barrier","authors":"Jian Yu, Jiantao Bian, Linqin Jiang, Y. Qiu, Weiyuan Duan, Fanying Meng, Zhengxin Liu","doi":"10.1149/2.003406SSL","DOIUrl":"https://doi.org/10.1149/2.003406SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81505802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of Q-Time on the Passivation of Al2O3/p-In0.53Ga0.47As Interfaces Using Various Surface Treatments","authors":"Q. Luc, E. Chang, H. Trinh, Y. Wong, H. Do, Yueh-Chin Lin, Sheng–Ping Wang, Min-Chieh Yang, Hsing-chen Wu, Ke-Hung Chen, Yi-Hsien Liao, Sheng-Hung Tu","doi":"10.1149/2.0011410SSL","DOIUrl":"https://doi.org/10.1149/2.0011410SSL","url":null,"abstract":"The downscaling of complementary metal-oxide-semiconductor (CMOS)mayneedtheintegrationofIII-Vsemiconductorsandrelated high-k materials, since Si-based devices have reached their physical limitations. Unfortunately, the inherent poor interfacial quality of IIIV substrates and high dielectric constant gate oxides lead to the large defect state densities (Dit) which results in Fermi level pinning and the loss of channel controlling. 1,2 This issue is still a major challenge that needs to be addressed in spite of many achievements in interface passivation treatments. 3‐12 Recently, either ex-situ chemical and in-situ ALD surface treatments of the In0.53Ga0.47As substrates exhibited the strong minority carrier response at inversion region, which means Fermi level can be freely swept through the bandgap of III/V semiconductor. 9‐11 Similarly, O’Connor et al. 12 achieved the strong inversion behavior for n, p-In0.53Ga0.47As substrates with sulfur treatment and ALD-Al2O3 deposition. They also emphasized the impact of the delay time between the ex-situ chemical surface treatment and the ALD chamber loading (Q-time) on the quality of the high-k/III-V interface. The Q-time should be limited as low as possible; otherwise, the interfacial quality of high-k/III-V will be degraded. In this study, p-In0.53Ga0.47As substrates were treated by several chemical solutions with different Q-times prior to ALD chamber loading. Yet the nice C-V response was still observed even after 24 hours of Q-time for the MOSCAP structures studied. In terms of Q-time property, our results have supported the conclusion which might stand in contrast with previous studies, 7,8,12 i.e., reduced transfer time (less than few minutes) is not necessarily a prerequisite for an efficient chemical passivation of Al2O3/In0.53Ga0.47As interfaces. The nature of interface trap states discussed in this work would facilitate further understanding and passivating of high-k/III-V interfaces.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85025554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}