使用掺钒氧化铟阳极的酸性无缓冲有机太阳能电池

ECS Solid State Letters Pub Date : 2014-01-01 DOI:10.1149/2.0041412SSL

Hye-Min Lee, Yong-Jin Noh, Seok‐In Na, Han‐Ki Kim

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引用次数: 2

摘要

我们开发了v掺杂In2O3 (IVO)薄膜，用于酸性聚(3,4-乙烯二氧基噻吩):聚(苯乙烯磺酸)(PEDOT:PSS)缓冲层自由有机太阳能电池(OSCs)的缓冲和阳极集成电极。通过V2O5和In2O3靶材的共溅射和快速热退火，获得了片阻为41.7 /平方，透过率为80.4%，功函数为5.0 eV的IVO薄膜。在没有酸性PEDOT:PSS缓冲层的情况下，在IVO阳极上制备的P3HT: pcms基OSC的PCE为2.91%，远高于在ITO阳极上制备的PEDOT:PSS基OSC的1.068%。消除OSCs中的酸性缓冲层使我们能够以减少涂层步骤的方式生产可靠的OSCs。©2014电化学学会。[DOI: 10.1149/2.0041412ssl]版权所有。

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Acidic Buffer-Free Organic Solar Cells Using Vanadium-Doped Indium Oxide Anodes

We developed V-doped In2O3 (IVO) films to use as a bufferand anode-integrated electrode for acidic poly (3,4-ethylene dioxylene thiophene):poly (styrene sulfonic acid) (PEDOT:PSS) buffer layer free-organic solar cells (OSCs). By co-sputtering of V2O5 and In2O3 targets and rapid thermal annealing, we obtained IVO films with a sheet resistance of 41.7 /square, and an optical transmittance of 80.4%, and a work function of 5.0 eV. The P3HT:PCBM-based OSCs fabricated on an IVO anode successfully functioned without an acidic PEDOT:PSS buffer layer and showed a PCE of 2.91%, which was much higher than that (1.068%) of a PEDOT:PSS free OSC with an ITO anode. The elimination of the acidic buffer layer in OSCs enabled us to produce the reliable OSCs with decreased coating steps. © 2014 The Electrochemical Society. [DOI: 10.1149/2.0041412ssl] All rights reserved.

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ECS Solid State Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

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