GaAs(111)衬底上立方Ga2S3薄膜的外延合成、带偏移和光电化学性质

ECS Solid State Letters Pub Date : 2014-01-01 DOI:10.1149/2.0021411SSL

Hongfei Liu, K. K. A. Antwi, Chin Sheng Chua, J. Huang, S. Chua, D. Chi

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引用次数: 14

摘要

采用硫化法在n-GaAs(111)衬底上外延合成了均匀无裂纹的Ga2S3立方薄膜。原子力显微镜显示，Ga2S3表面以直径小于50 nm的纳米颗粒为主。纳米颗粒聚集成规则的三角形结构，分层包装在砷化镓上，显著降低了砷化镓的反射率。低温光致发光显示典型的类受体缺陷，x射线光谱学显示ga2s3 / gaas异质结构具有价带差为0.6 ev的型异质结。研究了Ga2S3/n-GaAs(111)异质结的光电化学性质，并与典型三电极裸n-GaAs(111)衬底的光电化学性质进行了比较

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Epitaxial Synthesis, Band Offset, and Photoelectrochemical Properties of Cubic Ga2S3 Thin Films on GaAs (111) Substrates

Uniform and crack-free cubic Ga2S3 thin films have been epitaxially synthesized on n-GaAs (111) substrates by sulfurization. Atomic-force microscopy revealed that the Ga2S3 surface is dominated by nanoparticles of smaller than 50 nm in diameter. The nanoparticles, clustered into regular triangle structures that hierarchically packaged on GaAs, significantly reduced the reflectance of GaAs. Low-temperature photoluminescence revealed typical acceptor-like defects while X-ray photoemission spectroscopy revealed type-Iheterojunctionwithavalence-bandoffsetof0.6eVfortheGa2S3/GaAsheterostructure.Photoelectrochemicalpropertiesofthe Ga2S3/n-GaAs (111) heterojunction are studied and compared with those of bare n-GaAs (111) substrate in a typical three-electrode

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ECS Solid State Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

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