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Improved Characteristics of InGaZnO Thin-Film Transistor by using Fluorine Implant 氟植入改善InGaZnO薄膜晶体管性能
ECS Solid State Letters Pub Date : 2014-01-01 DOI: 10.1149/2.0121407SSL
L. Qian, Wing-Man Tang, P. Lai
{"title":"Improved Characteristics of InGaZnO Thin-Film Transistor by using Fluorine Implant","authors":"L. Qian, Wing-Man Tang, P. Lai","doi":"10.1149/2.0121407SSL","DOIUrl":"https://doi.org/10.1149/2.0121407SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"22 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78851392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Silicon Surface Passivation by Sputtered Aluminium Oxide: Influence of Annealing Temperature and Ambient Gas 溅射氧化铝对硅表面钝化:退火温度和环境气体的影响
ECS Solid State Letters Pub Date : 2014-01-01 DOI: 10.1149/2.0021412SSL
Xinyu Zhang, A. Thomson, A. Cuevas
{"title":"Silicon Surface Passivation by Sputtered Aluminium Oxide: Influence of Annealing Temperature and Ambient Gas","authors":"Xinyu Zhang, A. Thomson, A. Cuevas","doi":"10.1149/2.0021412SSL","DOIUrl":"https://doi.org/10.1149/2.0021412SSL","url":null,"abstract":"Aluminium oxide (AlOx) films have achieved excellent passivation on crystalline-silicon surfaces. Irrespective of the deposition method, an anneal is required to activate the passivation. In this work, the reaction kinetics of the annealing process for radiofrequency reactively-sputtered AlOx is investigated. The effectiveness of the activation anneal critically depend on the ambient gas. A gas mixture of N2 and H2 is found to be the best annealing ambient for sputtered Al2O3 films, leading to an effective surface recombination velocity Seff of ∼5 cm/s. The experiments indicate that the surface passivation anneal follows an activation energy EA close to 1.1 eV.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"54 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87620917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Impact of Aluminum Incorporation into In-Zn-O Active Channel for Highly-Stable Thin-Film Transistor Using Solution Process 溶液法制备高稳定薄膜晶体管In-Zn-O有源通道中铝掺入的影响
ECS Solid State Letters Pub Date : 2014-01-01 DOI: 10.1149/2.0041409SSL
Min-Ji Park, Jun-Yong Bak, Jeong-Seon Choi, Sung‐Min Yoon
{"title":"Impact of Aluminum Incorporation into In-Zn-O Active Channel for Highly-Stable Thin-Film Transistor Using Solution Process","authors":"Min-Ji Park, Jun-Yong Bak, Jeong-Seon Choi, Sung‐Min Yoon","doi":"10.1149/2.0041409SSL","DOIUrl":"https://doi.org/10.1149/2.0041409SSL","url":null,"abstract":"Top-gate Al-In-Zn-O (AIZO) thin-film transistors (TFTs) were fabricated using solution process and their device characteristics were demonstrated. The μsat, SS, and on/off ratio of the AIZO TFT post-annealed at 250°C were approximately 0.66 cm2 V−1 s−1, 0.24 V/dec, and 2.1 × 107. Slight negative shifts in turn on voltage were observed as small as 0.2 and 0.5 V under positive and negative-bias stress tests, respectively. Al incorporation into the IZO channel had important impacts on the annealing process optimization at lower temperature and highly-stable TFT performances.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88915529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Effect of Electron Mobility of the Electron Transport Layer on Fluorescent Organic Light-Emitting Diodes 荧光有机发光二极管电子传输层电子迁移率的影响
ECS Solid State Letters Pub Date : 2014-01-01 DOI: 10.1149/2.011404SSL
Sang Ho Rhee, Ki bong Nam, Chang Su Kim, Myungkwan Song, Woosum Cho, Sung‐Ho Jin, S. Ryu
{"title":"Effect of Electron Mobility of the Electron Transport Layer on Fluorescent Organic Light-Emitting Diodes","authors":"Sang Ho Rhee, Ki bong Nam, Chang Su Kim, Myungkwan Song, Woosum Cho, Sung‐Ho Jin, S. Ryu","doi":"10.1149/2.011404SSL","DOIUrl":"https://doi.org/10.1149/2.011404SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"30 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87246419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 30
Crystal Quality Improvement of GeSn Alloys by Thermal Annealing 热退火法改善GeSn合金晶体质量
ECS Solid State Letters Pub Date : 2014-01-01 DOI: 10.1149/2.0101410SSL
Xu Zhang, Dongliang Zhang, B. Cheng, Zhi Liu, Guangze Zhang, C. Xue, Qiming Wang
{"title":"Crystal Quality Improvement of GeSn Alloys by Thermal Annealing","authors":"Xu Zhang, Dongliang Zhang, B. Cheng, Zhi Liu, Guangze Zhang, C. Xue, Qiming Wang","doi":"10.1149/2.0101410SSL","DOIUrl":"https://doi.org/10.1149/2.0101410SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"114 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79227637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Effects of Tri-Layer Polymer Dielectrics on Electrical Characteristics in Pentacene Thin Film Transistors 三层聚合物电介质对并五苯薄膜晶体管电学特性的影响
ECS Solid State Letters Pub Date : 2014-01-01 DOI: 10.1149/2.0071407SSL
Shun-Kuan Lin, Yu Chang Li, Yu Ju Lin, Yeong-Her Wang
{"title":"Effects of Tri-Layer Polymer Dielectrics on Electrical Characteristics in Pentacene Thin Film Transistors","authors":"Shun-Kuan Lin, Yu Chang Li, Yu Ju Lin, Yeong-Her Wang","doi":"10.1149/2.0071407SSL","DOIUrl":"https://doi.org/10.1149/2.0071407SSL","url":null,"abstract":"The tri-layer polymer dielectrics were applied to reduce leakage significantly resulting in improved device mobility and stability. The lower and more stable leakage current can be ascribed to smoother and pinhole-free surface as Scanning electron microscope (SEM) shown. With the appropriate arrangement of three dielectric layers, mobility of pentacene thin film transistors (OTFTs) could be enhanced by a factor of 1.7, while non-cross-linked poly-4-vinylphenol (NCPVP) instead of cross-link PVP (CPVP), was chosen as top layer for surface energy closer to pentacene film.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"22 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81991302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Amorphous InGaZnO Thin Film Transistors with Wet-Etched Ag Electrodes 湿蚀刻银电极的非晶InGaZnO薄膜晶体管
ECS Solid State Letters Pub Date : 2014-01-01 DOI: 10.1149/2.001406SSL
Yuting Chen, Jie Wu, Zhe Hu, D. Zhou, Haiting Xie, C. Dong
{"title":"Amorphous InGaZnO Thin Film Transistors with Wet-Etched Ag Electrodes","authors":"Yuting Chen, Jie Wu, Zhe Hu, D. Zhou, Haiting Xie, C. Dong","doi":"10.1149/2.001406SSL","DOIUrl":"https://doi.org/10.1149/2.001406SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"20 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84393997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
ZnO:Polymer Composite Material to Eliminate Kink in J-V Curves of Inverted Polymer Solar Cells ZnO:聚合物复合材料消除倒置聚合物太阳能电池J-V曲线的扭结
ECS Solid State Letters Pub Date : 2014-01-01 DOI: 10.1149/2.006403SSL
T. Jin, Wang Rui, Zhong Shu, S. K. Yee, Ling Jun, Chen Zhikuan, Vijila Chellappan, Chen Wei
{"title":"ZnO:Polymer Composite Material to Eliminate Kink in J-V Curves of Inverted Polymer Solar Cells","authors":"T. Jin, Wang Rui, Zhong Shu, S. K. Yee, Ling Jun, Chen Zhikuan, Vijila Chellappan, Chen Wei","doi":"10.1149/2.006403SSL","DOIUrl":"https://doi.org/10.1149/2.006403SSL","url":null,"abstract":"In this work, a simple strategy is introduced to eliminate the kink observed in J-V curves of inverted polymer solar cells (i-PSCs) using a polyelectrolyte electron selective layer. By incorporating zinc oxide nanoparticles (ZnO NPs) with poly [(9,9-bis(3 � -((N,Ndimethyl)-N-ethylammonium)-propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] dibromide (PFN-Br), fill factor was improved by 22% and overall device efficiency was significantly improved by 48%. Moreover, the presence of PFN-Br greatly enhances film forming properties of ZnO NPs, improving efficiency by 13% compared to using just ZnO NPs. This composite interfacial layer does not require any post-processing treatment, thus providing for a facile method to solve interface problems in i-PSCs.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84627447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Single Crystalline Germanium-Lead Alloy on Germanium Substrate Formed by Pulsed Laser Epitaxy 脉冲激光外延制备锗衬底上的单晶锗铅合金
ECS Solid State Letters Pub Date : 2014-01-01 DOI: 10.1149/2.0141407SSL
Qian Zhou, T. Chan, Sin Leng Lim, Chunlei Zhan, T. Osipowicz, X. Gong, E. Tok, Y. Yeo
{"title":"Single Crystalline Germanium-Lead Alloy on Germanium Substrate Formed by Pulsed Laser Epitaxy","authors":"Qian Zhou, T. Chan, Sin Leng Lim, Chunlei Zhan, T. Osipowicz, X. Gong, E. Tok, Y. Yeo","doi":"10.1149/2.0141407SSL","DOIUrl":"https://doi.org/10.1149/2.0141407SSL","url":null,"abstract":"Single crystalline germanium-lead alloy (GePb) is synthesized for the first time using pulsed laser induced epitaxy. Amorphous GePb with Pb content of 3% was deposited on Ge substrate and followed by pulsed laser annealing. Two sets of laser fluence, 300 mJ/cm2 and 400 mJ/cm2, were used in this work. The as-grown GePb alloy has good crystalline quality, as confirmed by transmission electron microscopy. No dislocation or Pb precipitation is found in the GePb layer. High-resolution Rutherford Backscattering Spectrometry (HRBS) characterization indicates that substitutional Pb content in the GePb alloy is 0.2 ± 0.1%. There is a substantial loss of Pb atoms after GePb formation according to the HRBS results. More serious Pb outdiffusion is observed for the sample annealed at 400 mJ/cm2 than that annealed at 300 mJ/cm2.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"17 1","pages":"91"},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81174103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Photoluminescence and Energy Transfer in Sn2+, Tb3+ Co-Activated P2O5-Li2O-ZnO Glasses with Tailored Emission Sn2+， Tb3+共激活P2O5-Li2O-ZnO定制发光玻璃的光致发光和能量转移
ECS Solid State Letters Pub Date : 2014-01-01 DOI: 10.1149/2.0021408SSL
Zhi-min Wang, G. Gan
{"title":"Photoluminescence and Energy Transfer in Sn2+, Tb3+ Co-Activated P2O5-Li2O-ZnO Glasses with Tailored Emission","authors":"Zhi-min Wang, G. Gan","doi":"10.1149/2.0021408SSL","DOIUrl":"https://doi.org/10.1149/2.0021408SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"66 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82821653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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