Impact of Aluminum Incorporation into In-Zn-O Active Channel for Highly-Stable Thin-Film Transistor Using Solution Process

Abstract

Top-gate Al-In-Zn-O (AIZO) thin-film transistors (TFTs) were fabricated using solution process and their device characteristics were demonstrated. The μsat, SS, and on/off ratio of the AIZO TFT post-annealed at 250°C were approximately 0.66 cm2 V−1 s−1, 0.24 V/dec, and 2.1 × 107. Slight negative shifts in turn on voltage were observed as small as 0.2 and 0.5 V under positive and negative-bias stress tests, respectively. Al incorporation into the IZO channel had important impacts on the annealing process optimization at lower temperature and highly-stable TFT performances.