T. Jin, Wang Rui, Zhong Shu, S. K. Yee, Ling Jun, Chen Zhikuan, Vijila Chellappan, Chen Wei
{"title":"ZnO:Polymer Composite Material to Eliminate Kink in J-V Curves of Inverted Polymer Solar Cells","authors":"T. Jin, Wang Rui, Zhong Shu, S. K. Yee, Ling Jun, Chen Zhikuan, Vijila Chellappan, Chen Wei","doi":"10.1149/2.006403SSL","DOIUrl":null,"url":null,"abstract":"In this work, a simple strategy is introduced to eliminate the kink observed in J-V curves of inverted polymer solar cells (i-PSCs) using a polyelectrolyte electron selective layer. By incorporating zinc oxide nanoparticles (ZnO NPs) with poly [(9,9-bis(3 � -((N,Ndimethyl)-N-ethylammonium)-propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] dibromide (PFN-Br), fill factor was improved by 22% and overall device efficiency was significantly improved by 48%. Moreover, the presence of PFN-Br greatly enhances film forming properties of ZnO NPs, improving efficiency by 13% compared to using just ZnO NPs. This composite interfacial layer does not require any post-processing treatment, thus providing for a facile method to solve interface problems in i-PSCs.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"3 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Solid State Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2.006403SSL","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
In this work, a simple strategy is introduced to eliminate the kink observed in J-V curves of inverted polymer solar cells (i-PSCs) using a polyelectrolyte electron selective layer. By incorporating zinc oxide nanoparticles (ZnO NPs) with poly [(9,9-bis(3 � -((N,Ndimethyl)-N-ethylammonium)-propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] dibromide (PFN-Br), fill factor was improved by 22% and overall device efficiency was significantly improved by 48%. Moreover, the presence of PFN-Br greatly enhances film forming properties of ZnO NPs, improving efficiency by 13% compared to using just ZnO NPs. This composite interfacial layer does not require any post-processing treatment, thus providing for a facile method to solve interface problems in i-PSCs.