Min-Ji Park, Jun-Yong Bak, Jeong-Seon Choi, Sung‐Min Yoon
{"title":"溶液法制备高稳定薄膜晶体管In-Zn-O有源通道中铝掺入的影响","authors":"Min-Ji Park, Jun-Yong Bak, Jeong-Seon Choi, Sung‐Min Yoon","doi":"10.1149/2.0041409SSL","DOIUrl":null,"url":null,"abstract":"Top-gate Al-In-Zn-O (AIZO) thin-film transistors (TFTs) were fabricated using solution process and their device characteristics were demonstrated. The μsat, SS, and on/off ratio of the AIZO TFT post-annealed at 250°C were approximately 0.66 cm2 V−1 s−1, 0.24 V/dec, and 2.1 × 107. Slight negative shifts in turn on voltage were observed as small as 0.2 and 0.5 V under positive and negative-bias stress tests, respectively. Al incorporation into the IZO channel had important impacts on the annealing process optimization at lower temperature and highly-stable TFT performances.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"1 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Impact of Aluminum Incorporation into In-Zn-O Active Channel for Highly-Stable Thin-Film Transistor Using Solution Process\",\"authors\":\"Min-Ji Park, Jun-Yong Bak, Jeong-Seon Choi, Sung‐Min Yoon\",\"doi\":\"10.1149/2.0041409SSL\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Top-gate Al-In-Zn-O (AIZO) thin-film transistors (TFTs) were fabricated using solution process and their device characteristics were demonstrated. The μsat, SS, and on/off ratio of the AIZO TFT post-annealed at 250°C were approximately 0.66 cm2 V−1 s−1, 0.24 V/dec, and 2.1 × 107. Slight negative shifts in turn on voltage were observed as small as 0.2 and 0.5 V under positive and negative-bias stress tests, respectively. Al incorporation into the IZO channel had important impacts on the annealing process optimization at lower temperature and highly-stable TFT performances.\",\"PeriodicalId\":11423,\"journal\":{\"name\":\"ECS Solid State Letters\",\"volume\":\"1 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ECS Solid State Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1149/2.0041409SSL\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Solid State Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2.0041409SSL","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Impact of Aluminum Incorporation into In-Zn-O Active Channel for Highly-Stable Thin-Film Transistor Using Solution Process
Top-gate Al-In-Zn-O (AIZO) thin-film transistors (TFTs) were fabricated using solution process and their device characteristics were demonstrated. The μsat, SS, and on/off ratio of the AIZO TFT post-annealed at 250°C were approximately 0.66 cm2 V−1 s−1, 0.24 V/dec, and 2.1 × 107. Slight negative shifts in turn on voltage were observed as small as 0.2 and 0.5 V under positive and negative-bias stress tests, respectively. Al incorporation into the IZO channel had important impacts on the annealing process optimization at lower temperature and highly-stable TFT performances.
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