Kailiang Zhang, Kuo Sun, F. Wang, Yemei Han, Zizhen Jiang, Baolin Wang, Kai Liu, H. Wong
{"title":"Al/VOx/Cu RRAM中电化学金属化和捕集/去捕阻开关机制","authors":"Kailiang Zhang, Kuo Sun, F. Wang, Yemei Han, Zizhen Jiang, Baolin Wang, Kai Liu, H. Wong","doi":"10.1149/2.0071410SSL","DOIUrl":null,"url":null,"abstract":"We investigated resistive switching mechanism in Al/VOx/Cu RRAM structure. The temperature dependence of resistance on low resistive state (LRS) and conductive atomic force microscopy (CAFM) measurement confirmed the formation and rupture of Cu conductive filaments (Cu-CF) in VOx dielectric. Cu-CF was formed after a trapping process (HRS→LRS) and ruptured at Schottky junction Al/VOx interface (LRS→HRS) judged by rectification and C-V characteristics of high resistive state (HRS). A model combining trapping/detrapping and Cu-CF formation/rupture is proposed to describe resistive switching mechanism. Based on the combined resistive switching mechanism, an application of multi-level states in Al/AlOx/VOx/Cu device is achieved successfully.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"47 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Electrochemical Metallization and Trapping/Detrapping Resistive Switching Mechanism in Al/VOx/Cu RRAM\",\"authors\":\"Kailiang Zhang, Kuo Sun, F. Wang, Yemei Han, Zizhen Jiang, Baolin Wang, Kai Liu, H. Wong\",\"doi\":\"10.1149/2.0071410SSL\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigated resistive switching mechanism in Al/VOx/Cu RRAM structure. The temperature dependence of resistance on low resistive state (LRS) and conductive atomic force microscopy (CAFM) measurement confirmed the formation and rupture of Cu conductive filaments (Cu-CF) in VOx dielectric. Cu-CF was formed after a trapping process (HRS→LRS) and ruptured at Schottky junction Al/VOx interface (LRS→HRS) judged by rectification and C-V characteristics of high resistive state (HRS). A model combining trapping/detrapping and Cu-CF formation/rupture is proposed to describe resistive switching mechanism. Based on the combined resistive switching mechanism, an application of multi-level states in Al/AlOx/VOx/Cu device is achieved successfully.\",\"PeriodicalId\":11423,\"journal\":{\"name\":\"ECS Solid State Letters\",\"volume\":\"47 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ECS Solid State Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1149/2.0071410SSL\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Solid State Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2.0071410SSL","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrochemical Metallization and Trapping/Detrapping Resistive Switching Mechanism in Al/VOx/Cu RRAM
We investigated resistive switching mechanism in Al/VOx/Cu RRAM structure. The temperature dependence of resistance on low resistive state (LRS) and conductive atomic force microscopy (CAFM) measurement confirmed the formation and rupture of Cu conductive filaments (Cu-CF) in VOx dielectric. Cu-CF was formed after a trapping process (HRS→LRS) and ruptured at Schottky junction Al/VOx interface (LRS→HRS) judged by rectification and C-V characteristics of high resistive state (HRS). A model combining trapping/detrapping and Cu-CF formation/rupture is proposed to describe resistive switching mechanism. Based on the combined resistive switching mechanism, an application of multi-level states in Al/AlOx/VOx/Cu device is achieved successfully.
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