ECS Solid State Letters最新文献

{"title":"Effects of Thermal Annealing on La2O3 Gate Dielectric of InGaZnO Thin-Film Transistor","authors":"X. Huang, Jie Song, P. Lai","doi":"10.1149/2.0011509SSL","DOIUrl":"https://doi.org/10.1149/2.0011509SSL","url":null,"abstract":"The effects of thermal annealing on La2O3 gate dielectric of InGaZnO thin-film transistor (TFT) are investigated by varying annealing temperature. Due to densification and enhanced moisture resistance of the La2O3 film, its surface roughness and interface with InGaZnO are improved by the thermal annealing, thus leading to significant improvement in the TFT electrical performance. However, higher-temperature (450 C) annealing deteriorates the dielectric roughness and induces more traps associated with grain boundaries in the La2O3 film. The TFT with an appropriate annealing (350 C) shows the best performance with smallest sub-threshold swing (0.276 V/dec), lowest threshold voltage (3.01 V), highest field-effect mobility (23.2 cm/V.s) and largest on-off current ratio (3.52×10). a) Electronic mail: eexdhuang@gmail.com, laip@eee.hku.hk Compared with conventional Si-based thin-film transistors (TFT), InGaZnO TFTs have advantages including low processing temperature, high field-effect mobility as well as good uniformity, and thus have received intensive attention over the last decade. 1 Recently, high-k dielectrics, such as Ta2O5, HfO2, ZrO2, AlZrO and Lu2O3, have been widely investigated to replace SiO2 or Si3N4 as gate dielectrics in InGaZnO TFTs for improving their driving ability and reducing their operating voltage and power consumption. 2-6 Among various high-k materials, La2O3 displays high dielectric constant (~ 30), large band gap (~ 6.0 eV) and good thermodynamic stability with InGaZnO, and thus should be a promising candidate as the gate dielectrics of InGaZnO TFTs. 7,8 It has been demonstrated that Ta incorporated in La2O3 (LaTaO) can further improve the TFT performance by suppressing moisture absorption of the La2O3 film; however, the TFT performance is quite sensitive to Ta content in the LaTaO film, thus leading to uniformity issues. 8 It must be noted that not only the dielectric itself but also the thermal treatment plays a key role in the device performance. Therefore, this work aims to study the thermal and electrical characteristics of InGaZnO TFTs with La2O3 gate dielectric prepared at different annealing temperatures. TFT devices with bottom-gate top-contact configuration were fabricated on heavily p-type Si substrate. The substrate was cleaned by a standard RCA cleaning: firstly, the substrate was submerged in solution I (H2O:H2O2:NH4OH=5:1:1) at 80 C for 10 min to remove organics and particles; then, the substrate was cleaned in solution II (H2O:H2O2:HCl=5:1:1) at 80 C for 10 min to remove metallic contaminants; finally, the substrate was dipped in 2% hydrofluoric acid for 1 min to remove native oxide. After the cleaning, 40-nm La2O3 was deposited on the substrate by radio-frequency sputterer using a La2O3 target in an Ar/O2 ambient. Then, the samples were divided into four groups: two of the groups went through post-deposition annealing (PDA) in N2 at 350 C and 450 C for 10 min respectively, denoted as LaO_350 and LaO_450 sampl","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72880727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Self-Ordered Aluminum Anodizing in Phosphonoacetic Acid and Its Structural Coloration","authors":"Akimasa Takenaga, T. Kikuchi, S. Natsui, R. Suzuki","doi":"10.1149/2.0021508SSL","DOIUrl":"https://doi.org/10.1149/2.0021508SSL","url":null,"abstract":"Ordered anodic porous alumina with large-scale periodicity was fabricated via phosphonoacetic acid anodizing. Aluminum specimens were anodized in a 0.1–0.9 M phosphonoacetic acid solution under various electrochemical operating conditions, and optimum anodizing at 205–225 V exhibited self-ordering growth of the porous alumina. These self-ordering voltages during phosphonoacetic acid anodizing filled an undiscovered vacant region in the linear relationship between the self-ordering voltage and the cell diameter. The nanostructured aluminum surface formed via self-ordering phosphonoacetic acid anodizing produced a bright structural coloration with a visible light wavelength of 500–700 nm, which is useful for optical nanoapplications. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. [DOI: 10.1149/2.0021508ssl] All rights reserved.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"10 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72705598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Strong Diffusion Suppression of Low Energy–Implanted Phosphorous in Germanium by N2 Co-Implantation","authors":"C. Thomidis, M. Barozzi, M. Bersani, V. Ioannou-Sougleridis, N. Vouroutzis, B. Colombeau, D. Skarlatos","doi":"10.1149/2.0061506SSL","DOIUrl":"https://doi.org/10.1149/2.0061506SSL","url":null,"abstract":"/Ge interface, while phosphorous dose loss and diffusion to the bulk are strongly suppressed in comparison to Gesubstrate without nitrogen implantation. Possible physical mechanisms (involving phosphorous-vacancies or phosphorous-nitrogencomplexes, and end-of-range interstitials) that explain this result are presented and discussed.© The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative CommonsAttribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/),which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in anyway and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. [DOI: 10.1149/2.0061506ssl]All rights reserved.Manuscript submitted February 26, 2015; revised manuscript received April 9, 2015. Published April 21, 2015.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"35 1","pages":"47"},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72729072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advantage of Ti-Doped Ge2Sb2Te5 Material for Phase Change Memory Applications","authors":"Liang Cao, Xinglong Ji, Wenqing Zhu, Qiumin She, Y. Chen, Zhigao Hu, Shuang-Shuang Guo, Zhitang Song, F. Rao, Bo Qian, Liangcai Wu","doi":"10.1149/2.0081512SSL","DOIUrl":"https://doi.org/10.1149/2.0081512SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"35 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78696557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of SrRuO3 Layer on Retention Properties of (Bi,Pr)(Fe,Mn)O3 Film Capacitor at High Temperature","authors":"Keisuke Nomura, Yuki Kondo, T. Kawae, A. Morimoto","doi":"10.1149/2.0031505SSL","DOIUrl":"https://doi.org/10.1149/2.0031505SSL","url":null,"abstract":"Ferroelectric random access memory (FeRAM) is currently attracting significant interest as a non-volatile memory technology that offers both low power consumption and high-speed operation. Recently, there have been attempts to apply FeRAM in the medical field because the ferroelectric domain of the devices has superior radiation hardness. The stability of the ferroelectric polarization is considered tobeoneofthemostimportantfactorsthatwouldenablewiderexpansion of the application range of FeRAM devices. The data integrity of non-volatile memories is typically required to be guaranteed for more than ten years over a wide range of temperatures, ranging from −10 to 70 ◦ C for consumer applications and from −40 to 85 ◦ C for industrial applications. In addition, memory devices that can store data at higher temperatures are also required to act as ID tags for use in the","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"18 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81499703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Origin of the Alternative Current (AC-) Gate Bias Improving the NBIS Stability of IGZO TFTs","authors":"M. Hung, Dapeng Wang, M. Furuta","doi":"10.1149/2.0101512SSL","DOIUrl":"https://doi.org/10.1149/2.0101512SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"11 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80871290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimizing Set Performance for Phase Change Memory with Dual Pulses Set Method","authors":"Yueqing Wang, D. Cai, Yifeng Chen, Yuchan Wang, Wei Hongyang, Huo Ruru, Xiaogang Chen, Zhitang Song","doi":"10.1149/2.0041507SSL","DOIUrl":"https://doi.org/10.1149/2.0041507SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"12 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77056170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improved Retention Characteristics of Pd-Nanocrystal-Based Nonvolatile Memories by a Simple Timing Technique","authors":"T. Kang, Yun-Feng Chen, Cheng-li Lin, Fang-Hsing Wang, Han-Wen Liu, F. Chien, Jen-Bin Shi","doi":"10.1149/2.0071512SSL","DOIUrl":"https://doi.org/10.1149/2.0071512SSL","url":null,"abstract":"By controlling the different initial time of Hf and Al precursor supply, the proposed HfxAlyOz tunneling layer with different Al/Hf ratios from 0.21 (top) to 0.06 (bottom) can be fabricated. Regarding Al/SiO2/Pd nanocrystals/proposed HfxAlyOz/Si, the proposed HfxAlyOz film can prevent stress from Pd nanocrystals and achieve a higher electron current during programming. Regarding the retention characteristics, the final memory windows of 2.5/2.05 V at 25/90◦C can be obtained, respectively. Programmed and erased with ±10 V/100 ms, the device shows a memory window of 2.4 V after 104 cycles for a 25◦C test. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0071512ssl] All rights reserved.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"143 3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77240941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultralow Reflectivity and Light Trapping for Crystalline Si Solar Cells by Use of Surface Structure Chemical Transfer Method on Pyramidal Textured Surfaces","authors":"K. Imamura, Takaaki Nonaka, Daichi Irishika, H. Kobayashi","doi":"10.1149/2.0091512SSL","DOIUrl":"https://doi.org/10.1149/2.0091512SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"18 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77644886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hysteresis of Transistor Characteristics of Amorphous IGZO TFTs Studied by Controlling Measurement Speed","authors":"Yi Jung Chen, Y. Tai","doi":"10.1149/2.0041504SSL","DOIUrl":"https://doi.org/10.1149/2.0041504SSL","url":null,"abstract":"We investigate the hysteresis in the transfer characteristic of amorphous indium-gallium-zinc-oxide thin-film transistor by controlling the sweep waveform of the gate voltage (Vg) provided by parameter measure unit. It is conventionally studied by double sweeping Vg with the default setup of the source measure units, which speed may vary with the current level. By manipulating the step time of sweeping Vg, we found that the response time of charge traps or donor-like states is in the range that overlaps with the conventional","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"51 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90625910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}