Improved Retention Characteristics of Pd-Nanocrystal-Based Nonvolatile Memories by a Simple Timing Technique
T. Kang, Yun-Feng Chen, Cheng-li Lin, Fang-Hsing Wang, Han-Wen Liu, F. Chien, Jen-Bin Shi
{"title":"Improved Retention Characteristics of Pd-Nanocrystal-Based Nonvolatile Memories by a Simple Timing Technique","authors":"T. Kang, Yun-Feng Chen, Cheng-li Lin, Fang-Hsing Wang, Han-Wen Liu, F. Chien, Jen-Bin Shi","doi":"10.1149/2.0071512SSL","DOIUrl":null,"url":null,"abstract":"By controlling the different initial time of Hf and Al precursor supply, the proposed HfxAlyOz tunneling layer with different Al/Hf ratios from 0.21 (top) to 0.06 (bottom) can be fabricated. Regarding Al/SiO2/Pd nanocrystals/proposed HfxAlyOz/Si, the proposed HfxAlyOz film can prevent stress from Pd nanocrystals and achieve a higher electron current during programming. Regarding the retention characteristics, the final memory windows of 2.5/2.05 V at 25/90◦C can be obtained, respectively. Programmed and erased with ±10 V/100 ms, the device shows a memory window of 2.4 V after 104 cycles for a 25◦C test. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0071512ssl] All rights reserved.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"143 3 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Solid State Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2.0071512SSL","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
By controlling the different initial time of Hf and Al precursor supply, the proposed HfxAlyOz tunneling layer with different Al/Hf ratios from 0.21 (top) to 0.06 (bottom) can be fabricated. Regarding Al/SiO2/Pd nanocrystals/proposed HfxAlyOz/Si, the proposed HfxAlyOz film can prevent stress from Pd nanocrystals and achieve a higher electron current during programming. Regarding the retention characteristics, the final memory windows of 2.5/2.05 V at 25/90◦C can be obtained, respectively. Programmed and erased with ±10 V/100 ms, the device shows a memory window of 2.4 V after 104 cycles for a 25◦C test. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0071512ssl] All rights reserved.
用一种简单的定时技术改进pd纳米晶非易失性存储器的保留特性
通过控制不同的Hf和Al前驱体初始供给时间，可以制备出Al/Hf比值为0.21(上)~ 0.06(下)的HfxAlyOz隧道层。对于Al/SiO2/Pd纳米晶/ HfxAlyOz/Si, HfxAlyOz薄膜可以防止Pd纳米晶的应力，并在编程过程中获得更高的电子电流。在保持特性方面，在25/90◦C下可获得2.5/2.05 V的最终记忆窗。编程和擦除±10 V/100 ms，设备显示一个2.4 V的记忆窗口后104个周期25◦C测试。©作者2015。由ECS出版。这是一篇基于知识共享署名4.0许可(CC BY, http://creativecommons.org/licenses/by/4.0/)的开放获取文章，该许可允许在任何媒体上不受限制地重复使用该作品，前提是正确引用原始作品。[DOI: 10.1149/2.0071512ssl]版权所有。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
