氮共注入对低能注入磷在锗中的强扩散抑制

C. Thomidis, M. Barozzi, M. Bersani, V. Ioannou-Sougleridis, N. Vouroutzis, B. Colombeau, D. Skarlatos
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引用次数: 13

摘要

与未注入氮气的gesubsubstrate相比,磷的剂量损失和向体扩散被强烈抑制。提出并讨论了解释这一结果的可能的物理机制(涉及磷-空位或磷-氮复合物,以及范围末端间隙)。©作者2015。由ECS出版。这是一篇在知识共享署名非商业禁止衍生品4.0许可证(CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/),which)条款下发布的开放获取文章,允许在任何媒体上进行非商业重用、分发和复制,前提是原始作品不以任何方式改变并适当引用。如需商业使用许可,请发邮件至oa@electrochem.org。[DOI: 10.1149/2.0061506ssl]版权所有稿件提交:2015年2月26日;2015年4月9日收稿。2015年4月21日出版。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Strong Diffusion Suppression of Low Energy–Implanted Phosphorous in Germanium by N2 Co-Implantation
/Ge interface, while phosphorous dose loss and diffusion to the bulk are strongly suppressed in comparison to Gesubstrate without nitrogen implantation. Possible physical mechanisms (involving phosphorous-vacancies or phosphorous-nitrogencomplexes, and end-of-range interstitials) that explain this result are presented and discussed.© The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative CommonsAttribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/),which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in anyway and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. [DOI: 10.1149/2.0061506ssl]All rights reserved.Manuscript submitted February 26, 2015; revised manuscript received April 9, 2015. Published April 21, 2015.
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来源期刊
ECS Solid State Letters
ECS Solid State Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
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