Effects of SrRuO3 Layer on Retention Properties of (Bi,Pr)(Fe,Mn)O3 Film Capacitor at High Temperature

Abstract

Ferroelectric random access memory (FeRAM) is currently attracting significant interest as a non-volatile memory technology that offers both low power consumption and high-speed operation. Recently, there have been attempts to apply FeRAM in the medical field because the ferroelectric domain of the devices has superior radiation hardness. The stability of the ferroelectric polarization is considered tobeoneofthemostimportantfactorsthatwouldenablewiderexpansion of the application range of FeRAM devices. The data integrity of non-volatile memories is typically required to be guaranteed for more than ten years over a wide range of temperatures, ranging from −10 to 70 ◦ C for consumer applications and from −40 to 85 ◦ C for industrial applications. In addition, memory devices that can store data at higher temperatures are also required to act as ID tags for use in the