{"title":"控制测量速度研究非晶IGZO TFTs晶体管特性的滞后","authors":"Yi Jung Chen, Y. Tai","doi":"10.1149/2.0041504SSL","DOIUrl":null,"url":null,"abstract":"We investigate the hysteresis in the transfer characteristic of amorphous indium-gallium-zinc-oxide thin-film transistor by controlling the sweep waveform of the gate voltage (Vg) provided by parameter measure unit. It is conventionally studied by double sweeping Vg with the default setup of the source measure units, which speed may vary with the current level. By manipulating the step time of sweeping Vg, we found that the response time of charge traps or donor-like states is in the range that overlaps with the conventional","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"51 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"Hysteresis of Transistor Characteristics of Amorphous IGZO TFTs Studied by Controlling Measurement Speed\",\"authors\":\"Yi Jung Chen, Y. Tai\",\"doi\":\"10.1149/2.0041504SSL\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigate the hysteresis in the transfer characteristic of amorphous indium-gallium-zinc-oxide thin-film transistor by controlling the sweep waveform of the gate voltage (Vg) provided by parameter measure unit. It is conventionally studied by double sweeping Vg with the default setup of the source measure units, which speed may vary with the current level. By manipulating the step time of sweeping Vg, we found that the response time of charge traps or donor-like states is in the range that overlaps with the conventional\",\"PeriodicalId\":11423,\"journal\":{\"name\":\"ECS Solid State Letters\",\"volume\":\"51 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ECS Solid State Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1149/2.0041504SSL\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Solid State Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2.0041504SSL","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hysteresis of Transistor Characteristics of Amorphous IGZO TFTs Studied by Controlling Measurement Speed
We investigate the hysteresis in the transfer characteristic of amorphous indium-gallium-zinc-oxide thin-film transistor by controlling the sweep waveform of the gate voltage (Vg) provided by parameter measure unit. It is conventionally studied by double sweeping Vg with the default setup of the source measure units, which speed may vary with the current level. By manipulating the step time of sweeping Vg, we found that the response time of charge traps or donor-like states is in the range that overlaps with the conventional
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