发布求助
文献互助 智能选刊 最新文献

ECS Solid State Letters最新文献

筛选
英文 中文
A Method to Determine the Located Region of Lateral Trap Position by Analysis of Three-Level Random Telegraph Signals in n-MOSFETs 通过分析n- mosfet中三电平随机电报信号确定横向陷阱位置的方法
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0041510SSL
Ching-En Chen, T. Chang, Bo You, Jyun-Yu Tsai, Wen-hung Lo, Szu-Han Ho, Kuan-Ju Liu, Ying-Hsin Lu, Y. Hung, T. Tseng, James Wu, W. Tsai, Kuo-Yu Chenge, Syu Yong-En
{"title":"A Method to Determine the Located Region of Lateral Trap Position by Analysis of Three-Level Random Telegraph Signals in n-MOSFETs","authors":"Ching-En Chen, T. Chang, Bo You, Jyun-Yu Tsai, Wen-hung Lo, Szu-Han Ho, Kuan-Ju Liu, Ying-Hsin Lu, Y. Hung, T. Tseng, James Wu, W. Tsai, Kuo-Yu Chenge, Syu Yong-En","doi":"10.1149/2.0041510SSL","DOIUrl":"https://doi.org/10.1149/2.0041510SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"23 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81197945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of Ag Nanorods-Embedded P3HT/PCBM Films for the Enhancement of Light Absorption 银纳米棒嵌入P3HT/PCBM薄膜增强光吸收的制备
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0021504SSL
J. Park, Tae-Sung Bae, J. Sohn, S. Cha, Jouhahn Lee, Seong Kyu Kim, Woong-Ki Hong
{"title":"Fabrication of Ag Nanorods-Embedded P3HT/PCBM Films for the Enhancement of Light Absorption","authors":"J. Park, Tae-Sung Bae, J. Sohn, S. Cha, Jouhahn Lee, Seong Kyu Kim, Woong-Ki Hong","doi":"10.1149/2.0021504SSL","DOIUrl":"https://doi.org/10.1149/2.0021504SSL","url":null,"abstract":"We report a facile method for preparing hybrid nanostructured films composed of poly(3-hexlythiophene) (P3HT) and [6,6]-phenylC61-butyric acid methyl ester (PCBM) with silver (Ag) nanorods (AgNRs) array. The AgNRs were synthesized by an electrochemical deposition method using an anodic aluminum oxide template with 50-nm-pore-diameter and 10-μm-thickness. The nanostructured P3HT/PCBM film was formed by the intercalation of AgNRs into the P3HT/PCBM film. The nanostructured P3HT/PCBM film with AgNRs showed enhanced optical absorption in the spectral range of 300–650 nm due to localized surface plasmon resonance and scattering effects around the AgNRs compared with spin-coated and nanopatterned P3HT/PCBM films without AgNRs. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. [DOI: 10.1149/2.0021504ssl] All rights reserved.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"57 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80501512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Carbon Nanotube Synthesis via the Calciothermic Reduction of Carbon Dioxide with Iron Additives 添加铁的二氧化碳钙热还原法制备碳纳米管
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0031509SSL
T. Kikuchi, R. Ishida, S. Natsui, Takehiko Kumagai, I. Ogino, N. Sakaguchi, M. Ueda, R. Suzuki
{"title":"Carbon Nanotube Synthesis via the Calciothermic Reduction of Carbon Dioxide with Iron Additives","authors":"T. Kikuchi, R. Ishida, S. Natsui, Takehiko Kumagai, I. Ogino, N. Sakaguchi, M. Ueda, R. Suzuki","doi":"10.1149/2.0031509SSL","DOIUrl":"https://doi.org/10.1149/2.0031509SSL","url":null,"abstract":"The novel fabrication of multi-walled carbon nanotube (MWCNT)/cementite (Fe3C) nanocomposites was demonstrated via the calciothermic reduction of carbon dioxide (CO2) through electrolysis in molten CaCl2/CaO with iron additives at 1173 K. In this technique, CO2 generated from a graphite anode is reduced to carbon with a metallic calcium reductant formed on a graphite cathode via electrolysis in molten salt. Calciothermic reduction without iron additives resulted in the formation of onion-like carbons (OLCs) with spherical graphite layers and thin graphite sheets. In contrast, MWCNT/Fe3C nanocomposites and OLCs were successfully fabricated via calciothermic reduction with iron additives through their catalytic activities. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. [DOI: 10.1149/2.0031509ssl] All rights reserved.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"18 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79203446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Preparation of Ultrathin Germanium on Insulator Films Using a Wet Etching Process 湿法蚀刻法制备超薄锗绝缘体膜
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0021506SSL
C. Sun, R. Liang, Jing Wang, Jun Xu
{"title":"Preparation of Ultrathin Germanium on Insulator Films Using a Wet Etching Process","authors":"C. Sun, R. Liang, Jing Wang, Jun Xu","doi":"10.1149/2.0021506SSL","DOIUrl":"https://doi.org/10.1149/2.0021506SSL","url":null,"abstract":"We demonstrate a wet etching method to reduce the thickness of thin germanium-on-insulator (GOI) films using a dilute solution (a NH4OH:H2O2:H2O 2:1:4000 mixture) at a low temperature (5◦C). The etch rate and thickness uniformity were well controlled. The root mean square roughness after wet etching was less than 0.5 nm and did not degrade compared with the original sample. Finally, back gate junctionless transistors were fabricated using the GOI wafers with 15-nm-thick Ge films, thinned by the developed method. The transistors had good Ion/Ioff ratio and mobility qualities, indicating that the wet etching process effectively thinned the Ge films. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0021506ssl] All rights reserved.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"66 1","pages":"43"},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73761857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Thickness Dependence of Optical Properties of Amorphous Indium Gallium Zinc Oxide Thin Films: Effects of Free-Electrons and Quantum Confinement 非晶铟镓锌氧化物薄膜光学性质的厚度依赖性:自由电子和量子约束的影响
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0031504SSL
X. D. Li, Siyuan Chen, Tupei Chen, Y. Liu
{"title":"Thickness Dependence of Optical Properties of Amorphous Indium Gallium Zinc Oxide Thin Films: Effects of Free-Electrons and Quantum Confinement","authors":"X. D. Li, Siyuan Chen, Tupei Chen, Y. Liu","doi":"10.1149/2.0031504SSL","DOIUrl":"https://doi.org/10.1149/2.0031504SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"9 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84607300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Enhanced Physical and Electrical Characteristics of Screen-Printed n-Type Mono-Crystalline Silicon Solar Cells by AgAl Front Pastes with Various Aluminum Contents 不同铝含量AgAl前糊料增强n型单晶硅太阳电池的物理和电气特性
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0051504SSL
Y. Chiu, Chin-Lung Cheng, T. Whang, H. M. Chu
{"title":"Enhanced Physical and Electrical Characteristics of Screen-Printed n-Type Mono-Crystalline Silicon Solar Cells by AgAl Front Pastes with Various Aluminum Contents","authors":"Y. Chiu, Chin-Lung Cheng, T. Whang, H. M. Chu","doi":"10.1149/2.0051504SSL","DOIUrl":"https://doi.org/10.1149/2.0051504SSL","url":null,"abstract":"Silver-aluminum (AgAl) pastes with various aluminum (Al) contents have been synthesized to enhance physical and electrical characteristics of screen-printed n-type mono-crystalline silicon solar cells (SPNMSCs). The improved series resistance and contact adhesion were demonstrated by a 4 wt% of Al contents doped AgAl front pastes (FPs). The achievement of a conversion efficiency improvement of more than 1.7% absolute from 14.6% to 16.3% in SPNMSCs with a 4 wt% of Al content in AgAl FP was explored. The promoted mechanism could be attributed to suitably front-surface-field formed at p + emitter by circulating track supplied from Al powder softened in AgAl FPs during co-firing.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"12 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88223950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Facile Synthesis of 3D Graphene Hydrogel/Carbon Nanofibers Composites for Supercapacitor Electrode 超级电容器电极用三维石墨烯水凝胶/纳米碳纤维复合材料的简易合成
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0031512SSL
Yuanzhan Wu, Suqin Liu, Kuangmin Zhao, Hao Yuan, Kezhou Lv, Guanying Ye
{"title":"Facile Synthesis of 3D Graphene Hydrogel/Carbon Nanofibers Composites for Supercapacitor Electrode","authors":"Yuanzhan Wu, Suqin Liu, Kuangmin Zhao, Hao Yuan, Kezhou Lv, Guanying Ye","doi":"10.1149/2.0031512SSL","DOIUrl":"https://doi.org/10.1149/2.0031512SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"39 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86560793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Ferroelectricity in Rare-Earth Modified Hafnia Thin Films Deposited by Sequential Pulsed Laser Deposition 顺序脉冲激光沉积稀土修饰铪薄膜中的铁电性
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0031511SSL
Y. Sharma, D. Barrionuevo, Radhe Agarwal, S. Pavunny, R. Katiyar
{"title":"Ferroelectricity in Rare-Earth Modified Hafnia Thin Films Deposited by Sequential Pulsed Laser Deposition","authors":"Y. Sharma, D. Barrionuevo, Radhe Agarwal, S. Pavunny, R. Katiyar","doi":"10.1149/2.0031511SSL","DOIUrl":"https://doi.org/10.1149/2.0031511SSL","url":null,"abstract":"Room temperature ferroelectricity in pulsed laser deposited rare-earth doped hafnium oxide (HfO2) thin films is discussed. Maximum values of remnant polarizations (Pr) ~13.5 and 12 μC/cm2 along with coercive fields (EC) ~334 and 384 kV/cm are observed in 6 mol. % of rare-earth (Sm or Gd) doped-HfO2 thin films (Sm:HfO2 and Gd:HfO2), respectively. Piezoresponse force microscopy measurements confirmed ferroelectric nature of films by showing phase hysteresis and butterfly amplitude loops. It is noticed that wake-up cycles improved the remnant polarization and found to be necessary for the forming of well saturated hysteresis loops. Our results showed potential toward realization of future highly scaled non-volatile ferroelectric memories.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"84 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80513195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
4H-SiC/Si Heterojunction Bipolar Transistors Fabricated by Surface Activated Bonding 表面活化键合制备4H-SiC/Si异质结双极晶体管
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0041511SSL
Jianbo Liang, S. Shimizu, S. Nishida, N. Shigekawa, M. Arai
{"title":"4H-SiC/Si Heterojunction Bipolar Transistors Fabricated by Surface Activated Bonding","authors":"Jianbo Liang, S. Shimizu, S. Nishida, N. Shigekawa, M. Arai","doi":"10.1149/2.0041511SSL","DOIUrl":"https://doi.org/10.1149/2.0041511SSL","url":null,"abstract":"4H-SiC/Si heterojunction bipolar transistors with emitter-up (E-up) and collector-up (C-up) configurations were fabricated by surface activated bonding for the first time. Their electrical characteristics were measured at raised ambient temperatures. The common-base current gain α increased as the temperature was raised in the both E-up and C-up structures. In the E-up structure, α reached to ≈ 0.99 at 573 K. Improvements in both device structures and surface activated bonding conditions should provide further improvements in device performance. © 2015 The Electrochemical Society. [DOI: 10.1149/2.0041511ssl] All rights reserved.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73710989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Cathodoluminescence Properties of Ba3Si6O9N4:Eu2+ Phosphors Ba3Si6O9N4:Eu2+荧光粉的阴极发光特性
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0051503SSL
Aijun Mao, Zhengyan Zhao, Yuhua Wang, Quansheng Wu, Xicheng Wang, Chuang Wang, Yanyan Li
{"title":"Cathodoluminescence Properties of Ba3Si6O9N4:Eu2+ Phosphors","authors":"Aijun Mao, Zhengyan Zhao, Yuhua Wang, Quansheng Wu, Xicheng Wang, Chuang Wang, Yanyan Li","doi":"10.1149/2.0051503SSL","DOIUrl":"https://doi.org/10.1149/2.0051503SSL","url":null,"abstract":"Ba3-xSi6O9N4:xEu(2+) (0.03 <= x <= 0.10) phosphors were successfully synthesized by a solid state reaction method. Under electron beam excitation, the cathodoluminescence intensity reached a maximum at x = 0.07. The corresponding emission spectrum peaked at similar to 493 nm (full-width at half maximum approximate to 46 nm) with CIE coordinate of (0.101, 0.418). The results show that Ba2.93Si6O9N4:0.07Eu(2+) phosphor exhibits high brightness, high color purity, and a higher thermal stability compared to the commercial green Topstar, LMS520B phosphor, which indicates that it could be a candidate for field-emission displays (FEDs). (C) 2015 The Electrochemical Society. All rights reserved.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"9 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87673954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信