Y. Sharma, D. Barrionuevo, Radhe Agarwal, S. Pavunny, R. Katiyar
{"title":"顺序脉冲激光沉积稀土修饰铪薄膜中的铁电性","authors":"Y. Sharma, D. Barrionuevo, Radhe Agarwal, S. Pavunny, R. Katiyar","doi":"10.1149/2.0031511SSL","DOIUrl":null,"url":null,"abstract":"Room temperature ferroelectricity in pulsed laser deposited rare-earth doped hafnium oxide (HfO2) thin films is discussed. Maximum values of remnant polarizations (Pr) ~13.5 and 12 μC/cm2 along with coercive fields (EC) ~334 and 384 kV/cm are observed in 6 mol. % of rare-earth (Sm or Gd) doped-HfO2 thin films (Sm:HfO2 and Gd:HfO2), respectively. Piezoresponse force microscopy measurements confirmed ferroelectric nature of films by showing phase hysteresis and butterfly amplitude loops. It is noticed that wake-up cycles improved the remnant polarization and found to be necessary for the forming of well saturated hysteresis loops. Our results showed potential toward realization of future highly scaled non-volatile ferroelectric memories.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"84 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Ferroelectricity in Rare-Earth Modified Hafnia Thin Films Deposited by Sequential Pulsed Laser Deposition\",\"authors\":\"Y. Sharma, D. Barrionuevo, Radhe Agarwal, S. Pavunny, R. Katiyar\",\"doi\":\"10.1149/2.0031511SSL\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Room temperature ferroelectricity in pulsed laser deposited rare-earth doped hafnium oxide (HfO2) thin films is discussed. Maximum values of remnant polarizations (Pr) ~13.5 and 12 μC/cm2 along with coercive fields (EC) ~334 and 384 kV/cm are observed in 6 mol. % of rare-earth (Sm or Gd) doped-HfO2 thin films (Sm:HfO2 and Gd:HfO2), respectively. Piezoresponse force microscopy measurements confirmed ferroelectric nature of films by showing phase hysteresis and butterfly amplitude loops. It is noticed that wake-up cycles improved the remnant polarization and found to be necessary for the forming of well saturated hysteresis loops. Our results showed potential toward realization of future highly scaled non-volatile ferroelectric memories.\",\"PeriodicalId\":11423,\"journal\":{\"name\":\"ECS Solid State Letters\",\"volume\":\"84 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ECS Solid State Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1149/2.0031511SSL\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Solid State Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2.0031511SSL","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ferroelectricity in Rare-Earth Modified Hafnia Thin Films Deposited by Sequential Pulsed Laser Deposition
Room temperature ferroelectricity in pulsed laser deposited rare-earth doped hafnium oxide (HfO2) thin films is discussed. Maximum values of remnant polarizations (Pr) ~13.5 and 12 μC/cm2 along with coercive fields (EC) ~334 and 384 kV/cm are observed in 6 mol. % of rare-earth (Sm or Gd) doped-HfO2 thin films (Sm:HfO2 and Gd:HfO2), respectively. Piezoresponse force microscopy measurements confirmed ferroelectric nature of films by showing phase hysteresis and butterfly amplitude loops. It is noticed that wake-up cycles improved the remnant polarization and found to be necessary for the forming of well saturated hysteresis loops. Our results showed potential toward realization of future highly scaled non-volatile ferroelectric memories.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
