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ECS Solid State Letters最新文献

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Inductively Coupled Plasma Reactive Ion Etching of Magnetic Tunnel Junction Stacks in a CH3COOH/Ar Gas CH3COOH/Ar气体中磁隧道结堆的电感耦合等离子体反应离子刻蚀
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0071510SSL
Adrian Adalberto Garay, J. Choi, S. Hwang, C. Chung
{"title":"Inductively Coupled Plasma Reactive Ion Etching of Magnetic Tunnel Junction Stacks in a CH3COOH/Ar Gas","authors":"Adrian Adalberto Garay, J. Choi, S. Hwang, C. Chung","doi":"10.1149/2.0071510SSL","DOIUrl":"https://doi.org/10.1149/2.0071510SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"42 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90519110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Room Temperature Photoluminescence Characterization of Low Dose As + Implanted Si after Rapid Thermal Annealing 快速热退火后低剂量As +注入Si的室温光致发光特性
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0011508SSL
W. Yoo, M. Yoshimoto, A. Sagara, S. Shibata
{"title":"Room Temperature Photoluminescence Characterization of Low Dose As + Implanted Si after Rapid Thermal Annealing","authors":"W. Yoo, M. Yoshimoto, A. Sagara, S. Shibata","doi":"10.1149/2.0011508SSL","DOIUrl":"https://doi.org/10.1149/2.0011508SSL","url":null,"abstract":"Arsenic (As+ 150 keV, 1.0 × 1013 cm−2) implanted p−-Si(100) wafers were spike annealed at 1100◦C for 1s in a commercially available rapid thermal annealing (RTA) system. Significant variations in sheet resistance were observed while As dopant profiles, measured by secondary ion mass spectroscopy (SIMS), were almost identical. Photoluminescence (PL) spectra were measured from all wafers under three different excitation wavelengths (532, 650 and 827 nm) at room temperature. PL spectra showed large intensity variation, corresponding to the sheet resistance. PL excitation wavelength dependence suggests the variation in density of residual damage as the possible cause of sheet resistance variation. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0011508ssl] All rights reserved.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"20 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88979737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Threshold Switching in Te–SbO Films for the Selection Device of Crossbar Resistive Memory Applications Te-SbO薄膜的阈值开关在跨栅电阻式存储器选择器件中的应用
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0051508SSL
Ji Woon Park, Young-Seok Kim, S. Ryu, J. H. Lee, Jaeyeong Heo, H. Kim
{"title":"Threshold Switching in Te–SbO Films for the Selection Device of Crossbar Resistive Memory Applications","authors":"Ji Woon Park, Young-Seok Kim, S. Ryu, J. H. Lee, Jaeyeong Heo, H. Kim","doi":"10.1149/2.0051508SSL","DOIUrl":"https://doi.org/10.1149/2.0051508SSL","url":null,"abstract":"aDepartment of Materials Science and Engineering and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea bDepartment of Electrical Engineering, Stanford University, Stanford, California 94305, USA cDepartment of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA dDepartment of Materials Science and Engineering, and Optoelectronics Convergence Research Center, Chonnam National University, Gwangju 500-757, Korea","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"47 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81099850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Phase-Selective Synthesis of Indium Hydroxide, Oxyhydroxide and Oxide Nanocrystals Using a One-Step Hydrothermal Process and Their Luminescence Properties 一步水热法相选择合成氢氧化铟、氢氧化氧和氧化物纳米晶及其发光性能
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0051507SSL
Yi-dong Luo, Xiao‐hong Zheng, L. Zou, Shanshan Hu, Jun Yang
{"title":"Phase-Selective Synthesis of Indium Hydroxide, Oxyhydroxide and Oxide Nanocrystals Using a One-Step Hydrothermal Process and Their Luminescence Properties","authors":"Yi-dong Luo, Xiao‐hong Zheng, L. Zou, Shanshan Hu, Jun Yang","doi":"10.1149/2.0051507SSL","DOIUrl":"https://doi.org/10.1149/2.0051507SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"36 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75640697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical Investigation of Deep-Level Defects Introduced in AlGaN/GaN Heterostructures by CF4 Plasma Treatments CF4等离子体处理AlGaN/GaN异质结构中引入深层缺陷的电学研究
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0011505SSL
Retsuo Kawakami, Y. Nakano, M. Niibe, T. Shirahama, T. Mukai
{"title":"Electrical Investigation of Deep-Level Defects Introduced in AlGaN/GaN Heterostructures by CF4 Plasma Treatments","authors":"Retsuo Kawakami, Y. Nakano, M. Niibe, T. Shirahama, T. Mukai","doi":"10.1149/2.0011505SSL","DOIUrl":"https://doi.org/10.1149/2.0011505SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"133 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83521047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Aging-Dependent Electrical Properties in Polymer-Passivated ZnO Nanowire Field Effect Transistors 聚合物钝化ZnO纳米线场效应晶体管的老化特性研究
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0081504SSL
Woong-Ki Hong
{"title":"Aging-Dependent Electrical Properties in Polymer-Passivated ZnO Nanowire Field Effect Transistors","authors":"Woong-Ki Hong","doi":"10.1149/2.0081504SSL","DOIUrl":"https://doi.org/10.1149/2.0081504SSL","url":null,"abstract":"Aging-dependentelectricalpropertiesinpoly(methylmethacrylate)(PMMA)-passivatedZnOnanowirefieldeffecttransistors,whichshow an enhancement-mode behavior, were investigated. The electrical characteristics of the devices were systematically measuredand compared before and after storage in a vacuum desiccator for 8 months. The electrical properties of the aged devices, such asmobility, subthreshold swing, and carrier density, were greatly improved compared with those of the as-fabricated devices. This canbe attributed to desorption effects of adsorbed molecules on the nanowire surface in which the adsorbed molecules can transportthrough a PMMA passivation layer under vacuum.© The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative CommonsAttribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in anymedium, provided the original work is properly cited. [DOI: 10.1149/2.0081504ssl] All rights reserved.Manuscript submitted December 10, 2014; revised manuscript received February 9, 2015. Published February 18, 2015.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88777842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Plasma Etching Chemistry for Smoothening of Ultrananocrystalline Diamond Films 等离子体蚀刻化学用于超晶金刚石薄膜的光滑
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0081510SSL
D. Jaramillo-Cabanzo, G. Willing, M. Sunkara
{"title":"Plasma Etching Chemistry for Smoothening of Ultrananocrystalline Diamond Films","authors":"D. Jaramillo-Cabanzo, G. Willing, M. Sunkara","doi":"10.1149/2.0081510SSL","DOIUrl":"https://doi.org/10.1149/2.0081510SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"12 1","pages":"1076-1076"},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89922928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Etching Three-Dimensional Pattern on Sapphire Substrate by Dynamic Self-Masking Alunogen Compound 动态自掩蔽铝原化合物在蓝宝石衬底上蚀刻三维图案
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0051506SSL
S. Huang, Yen‐Ju Wu, H. Lin, S. F. Li, Y. J. Chen, Cheng‐Yi Liu
{"title":"Etching Three-Dimensional Pattern on Sapphire Substrate by Dynamic Self-Masking Alunogen Compound","authors":"S. Huang, Yen‐Ju Wu, H. Lin, S. F. Li, Y. J. Chen, Cheng‐Yi Liu","doi":"10.1149/2.0051506SSL","DOIUrl":"https://doi.org/10.1149/2.0051506SSL","url":null,"abstract":"Maskless H2SO4 wet-etching on sapphire substrates creates three-dimensional pyramidal pattern on sapphire surface. Alunogen self-forming mask grows in H2SO4 etching generating a dynamic self-masking action, which fabricates 3-dimensional pyramidal pattern on the etched sapphire wafers. The slope and size of the pyramids are controlled by rate ratio (k) between alunogen growth rate and c-plane etching rate. Constant k results in flat facet side-planes of sapphire pyramids and varying k in etching produce curved side-planes of the sapphire pyramid. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0051506ssl] All rights reserved.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"13 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74709044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A Low-Cost Uncooled Infrared Microbolometer by CMOS Process 基于CMOS工艺的低成本非制冷红外微热计
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0031507SSL
Ning Shen, Zhengxing Huang, Zhenan Tang
{"title":"A Low-Cost Uncooled Infrared Microbolometer by CMOS Process","authors":"Ning Shen, Zhengxing Huang, Zhenan Tang","doi":"10.1149/2.0031507SSL","DOIUrl":"https://doi.org/10.1149/2.0031507SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"145 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80491199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effects of N-Doped GeSbTe Buffer Layer on Switching Characteristics of Cu/Al2O3-Based CBRAM n掺杂GeSbTe缓冲层对Cu/ al2o3基CBRAM开关特性的影响
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0011507SSL
Seokjae Lim, Sangheon Lee, J. Woo, Daeseok Lee, A. Prakash, H. Hwang
{"title":"Effects of N-Doped GeSbTe Buffer Layer on Switching Characteristics of Cu/Al2O3-Based CBRAM","authors":"Seokjae Lim, Sangheon Lee, J. Woo, Daeseok Lee, A. Prakash, H. Hwang","doi":"10.1149/2.0011507SSL","DOIUrl":"https://doi.org/10.1149/2.0011507SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"464 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75183621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
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