Te-SbO薄膜的阈值开关在跨栅电阻式存储器选择器件中的应用

ECS Solid State Letters Pub Date : 2015-01-01 DOI:10.1149/2.0051508SSL

Ji Woon Park, Young-Seok Kim, S. Ryu, J. H. Lee, Jaeyeong Heo, H. Kim

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引用次数: 5

摘要

a首尔国立大学材料科学与工程系与校间半导体研究中心(ISRC)，首尔151-744;b斯坦福大学电气工程系，美国加利福尼亚州斯坦福94305;c宾夕法尼亚大学材料科学与工程系，美国宾夕法尼亚州费城19104;d全南国立大学材料科学与工程系，光电子融合研究中心;光州500-757，韩国

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Threshold Switching in Te–SbO Films for the Selection Device of Crossbar Resistive Memory Applications

aDepartment of Materials Science and Engineering and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea bDepartment of Electrical Engineering, Stanford University, Stanford, California 94305, USA cDepartment of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA dDepartment of Materials Science and Engineering, and Optoelectronics Convergence Research Center, Chonnam National University, Gwangju 500-757, Korea

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来源期刊

ECS Solid State Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

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