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ECS Solid State Letters最新文献

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High Endurance and Multilevel Operation in Oxide Semiconductor-Based Resistive RAM Using Thin-Film Transistor as a Selector 采用薄膜晶体管作为选择器的氧化物半导体电阻式RAM的高耐用性和多电平运行
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0061508SSL
Yang‐Shun Fan, Po-Tsun Liu, Chun-Ching Chen, Che-Chia Chang
{"title":"High Endurance and Multilevel Operation in Oxide Semiconductor-Based Resistive RAM Using Thin-Film Transistor as a Selector","authors":"Yang‐Shun Fan, Po-Tsun Liu, Chun-Ching Chen, Che-Chia Chang","doi":"10.1149/2.0061508SSL","DOIUrl":"https://doi.org/10.1149/2.0061508SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"23 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75510746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Compact Analytical Model for One Dimensional Carbon Nanotube Field Effect Transistor (CNTFET) 一维碳纳米管场效应晶体管(CNTFET)的紧凑解析模型
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0031506SSL
B. Kumar, A. Singh, C. Prabhu, C. Venkataseshaiah, Gan Che Sheng
{"title":"Compact Analytical Model for One Dimensional Carbon Nanotube Field Effect Transistor (CNTFET)","authors":"B. Kumar, A. Singh, C. Prabhu, C. Venkataseshaiah, Gan Che Sheng","doi":"10.1149/2.0031506SSL","DOIUrl":"https://doi.org/10.1149/2.0031506SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"140 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72775243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Thickness Dependent Solid-Phase Crystallization of Amorphous GeSn on Insulating Substrates at Low Temperatures (≤250°C) 低温(≤250℃)下非晶GeSn在绝缘衬底上的厚度相关固相结晶
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0021512SSL
R. Matsumura, M. Sasaki, Hironori Chikita, T. Sadoh, M. Miyao
{"title":"Thickness Dependent Solid-Phase Crystallization of Amorphous GeSn on Insulating Substrates at Low Temperatures (≤250°C)","authors":"R. Matsumura, M. Sasaki, Hironori Chikita, T. Sadoh, M. Miyao","doi":"10.1149/2.0021512SSL","DOIUrl":"https://doi.org/10.1149/2.0021512SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"44 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82172704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Effects of Anisotropy and Supporting Configuration on Silicon Wafer Profile Measurements for Pattern Overlay Estimation 各向异性和支撑结构对图案叠加估计中硅片轮廓测量的影响
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0011512SSL
W. Yoo, T. Ishigaki, K. Kang
{"title":"Effects of Anisotropy and Supporting Configuration on Silicon Wafer Profile Measurements for Pattern Overlay Estimation","authors":"W. Yoo, T. Ishigaki, K. Kang","doi":"10.1149/2.0011512SSL","DOIUrl":"https://doi.org/10.1149/2.0011512SSL","url":null,"abstract":"Wafer geometry and residual stress go through significant changes at different points in the semiconductor manufacturing process flow. Precise wafer geometry measurement is very important to assess process induced wafer geometry change (PIWGC) and minimize pattern overlay in lithography steps of advanced node devices and 3-D (3-dimensional) packaged devices. However, the precise wafer geometry measurement is very difficult due to gravitational wafer sag and interaction between the anisotropy of mechanical properties of Si and wafer supporting configurations. Effects of anisotropy and supporting configuration on 300 mm Si (001) wafer profile measurements were investigated for pattern overlay estimation and process optimization. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0011512ssl] All rights reserved.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"24 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85180522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Fabrication of Uniformly Arrayed Single- and Multi-Directional Slanted Cu Nanorods 均匀排列的单向和多向倾斜铜纳米棒的制备
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0091510SSL
Sung-Woon Cho, Jun‐Hyun Kim, Jeong Geun Bak, Chang-Koo Kim
{"title":"Fabrication of Uniformly Arrayed Single- and Multi-Directional Slanted Cu Nanorods","authors":"Sung-Woon Cho, Jun‐Hyun Kim, Jeong Geun Bak, Chang-Koo Kim","doi":"10.1149/2.0091510SSL","DOIUrl":"https://doi.org/10.1149/2.0091510SSL","url":null,"abstract":"Uniformly arrayed single- and multi-directional slanted Cu nanorods on a Si substrate were fabricated using a template of slanted channel structures. The single-directional slanted Cu nanorods were obtained using slanted channel structures oriented at an angle of 15° with respect to the surface normal. Double- and quadruple-directional slanted Cu nanorods were obtained using double- and quadruple-directional slanted channel structures, respectively. The double-directional Cu nanorods were symmetrically slanted at 30°, preserving the architecture of the slanted channel structures. The quadruple-directional slanted Cu nanorods had pyramidal structures, with slanted rods positioned at 30° from the surface normal to the right, left, front, and back.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"16 1","pages":"85"},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91021784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Uv-cured reactive mesogen-YInZnO hybrid materials as semiconducting channels in thin-film transistors using a solution-process 光固化反应介晶- yinzno杂化材料作为薄膜晶体管的半导体通道
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0031503SSL
Seon Yeong Kim, Y. Jung, Min-Jae Cho, Jaewon Lee, Hong-Gyu Park, Dai‐Hyun Kim, Tae-Wan Kim, I. Yun, Dae‐Shik Seo
{"title":"Uv-cured reactive mesogen-YInZnO hybrid materials as semiconducting channels in thin-film transistors using a solution-process","authors":"Seon Yeong Kim, Y. Jung, Min-Jae Cho, Jaewon Lee, Hong-Gyu Park, Dai‐Hyun Kim, Tae-Wan Kim, I. Yun, Dae‐Shik Seo","doi":"10.1149/2.0031503SSL","DOIUrl":"https://doi.org/10.1149/2.0031503SSL","url":null,"abstract":"Electrical performance of thin-film transistors (TFTs) is important for their applications. Solution-processed TFTs have low mobility and high sub-threshold swings (S.Ss) because there are many pores and pin-holes in the films. These characteristics are attributed to electron trapping in the YInZnO (YIZO) channel, the SiO2 gate insulator, or their interface. We fabricated hybrid YIZO TFTs with and without UV radiation, and observed that UV-curing of the film affected TFT performance through promoting a response to reactive mesogen (RM). The UV irradiated TFT showed better performance because of the alignment of the channel materials in the source-drain direction. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0031503ssl] All rights reserved.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"44 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87147563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Organic TFTs Using Iodine Treated Pentacene Film with High-k Dielectric Nd2O3 高k介电Nd2O3碘处理并五苯薄膜的有机tft研究
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0021511SSL
D. Saikia, P. Saikia
{"title":"Organic TFTs Using Iodine Treated Pentacene Film with High-k Dielectric Nd2O3","authors":"D. Saikia, P. Saikia","doi":"10.1149/2.0021511SSL","DOIUrl":"https://doi.org/10.1149/2.0021511SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"2010 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86300952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Nanocomposite Polymer Electrolyte for Enhancement in Stability of Betacyanin Dye Sensitized Solar Cells 增强甜菜菁苷染料敏化太阳能电池稳定性的纳米复合聚合物电解质
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0041506SSL
P. Chawla, M. Tripathi
{"title":"Nanocomposite Polymer Electrolyte for Enhancement in Stability of Betacyanin Dye Sensitized Solar Cells","authors":"P. Chawla, M. Tripathi","doi":"10.1149/2.0041506SSL","DOIUrl":"https://doi.org/10.1149/2.0041506SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"84 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83874037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The Impact of Pre/Post-metal Deposition Annealing on Negative-Bias-Temperature Instability in HfO2 Stack p-Channel Metal-Oxide-Semiconductor Field Effect Transistors 金属前/后沉积退火对HfO2堆叠p沟道金属氧化物半导体场效应晶体管负偏置温度不稳定性的影响
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0031508SSL
Ying-Hsin Lu, T. Chang, Szu-Han Ho, Ching-En Chen, Jyun-Yu Tsai, Kuan-Ju Liu, X. Liu, T. Tseng, O. Cheng, Cheng-Tung Huang, Ching-Sen Lu
{"title":"The Impact of Pre/Post-metal Deposition Annealing on Negative-Bias-Temperature Instability in HfO2 Stack p-Channel Metal-Oxide-Semiconductor Field Effect Transistors","authors":"Ying-Hsin Lu, T. Chang, Szu-Han Ho, Ching-En Chen, Jyun-Yu Tsai, Kuan-Ju Liu, X. Liu, T. Tseng, O. Cheng, Cheng-Tung Huang, Ching-Sen Lu","doi":"10.1149/2.0031508SSL","DOIUrl":"https://doi.org/10.1149/2.0031508SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"25 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82729883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effect of Nitrogen Doping on Variability of TaOx -RRAM for Low-Power 3-Bit MLC Applications 氮掺杂对低功耗3位MLC应用中TaOx -RRAM可变性的影响
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0011504SSL
Saiful Haque Misha, N. Tamanna, J. Woo, Sangheon Lee, Jeonghwan Song, Jaesung Park, Seokjae Lim, Jaehyuk Park, Hyunsang Hwang
{"title":"Effect of Nitrogen Doping on Variability of TaOx -RRAM for Low-Power 3-Bit MLC Applications","authors":"Saiful Haque Misha, N. Tamanna, J. Woo, Sangheon Lee, Jeonghwan Song, Jaesung Park, Seokjae Lim, Jaehyuk Park, Hyunsang Hwang","doi":"10.1149/2.0011504SSL","DOIUrl":"https://doi.org/10.1149/2.0011504SSL","url":null,"abstract":"The switching uniformity and reliability of the TaOx based resistive random access memory (RRAM) device were investigated with varying nitrogen doping concentration. The nitrogen doped samples shows excellent electrical and reliability characteristics such as small switching variability for 3-bit multilevel per cell (MLC), low power operation and good retention properties. Compared with control sample, improved device characteristics of nitrogen doped device can be explained by nitrogen inducedfilament confinement. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"28 1","pages":"25"},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87890776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 37
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