氮掺杂对低功耗3位MLC应用中TaOx -RRAM可变性的影响

ECS Solid State Letters Pub Date : 2015-01-01 DOI:10.1149/2.0011504SSL

Saiful Haque Misha, N. Tamanna, J. Woo, Sangheon Lee, Jeonghwan Song, Jaesung Park, Seokjae Lim, Jaehyuk Park, Hyunsang Hwang

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引用次数: 37

摘要

研究了不同氮掺杂浓度下TaOx基电阻式随机存取存储器(RRAM)器件的开关均匀性和可靠性。氮掺杂样品具有优异的电学和可靠性特性，如3位多电平每单元(MLC)的开关可变性小，低功耗运行和良好的保持性能。与对照样品相比，氮掺杂器件性能的改善可以用氮诱导灯丝约束来解释。©作者2015。由ECS出版。这是一篇在知识共享署名4.0许可(CC BY, http://creativecommons.org/licenses/by/4.0/)的条款下发布的开放获取文章，该许可允许在任何情况下不受限制地重复使用该作品

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Effect of Nitrogen Doping on Variability of TaOx -RRAM for Low-Power 3-Bit MLC Applications

The switching uniformity and reliability of the TaOx based resistive random access memory (RRAM) device were investigated with varying nitrogen doping concentration. The nitrogen doped samples shows excellent electrical and reliability characteristics such as small switching variability for 3-bit multilevel per cell (MLC), low power operation and good retention properties. Compared with control sample, improved device characteristics of nitrogen doped device can be explained by nitrogen inducedfilament confinement. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any

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来源期刊

ECS Solid State Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

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