Uv-cured reactive mesogen-YInZnO hybrid materials as semiconducting channels in thin-film transistors using a solution-process
Seon Yeong Kim, Y. Jung, Min-Jae Cho, Jaewon Lee, Hong-Gyu Park, Dai‐Hyun Kim, Tae-Wan Kim, I. Yun, Dae‐Shik Seo
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引用次数: 0
Abstract
Electrical performance of thin-film transistors (TFTs) is important for their applications. Solution-processed TFTs have low mobility and high sub-threshold swings (S.Ss) because there are many pores and pin-holes in the films. These characteristics are attributed to electron trapping in the YInZnO (YIZO) channel, the SiO2 gate insulator, or their interface. We fabricated hybrid YIZO TFTs with and without UV radiation, and observed that UV-curing of the film affected TFT performance through promoting a response to reactive mesogen (RM). The UV irradiated TFT showed better performance because of the alignment of the channel materials in the source-drain direction. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0031503ssl] All rights reserved.
光固化反应介晶- yinzno杂化材料作为薄膜晶体管的半导体通道
薄膜晶体管(TFTs)的电性能对其应用至关重要。溶液处理的薄膜具有低迁移率和高亚阈值波动(S.Ss)的特点,因为薄膜中存在许多孔隙和针孔。这些特性归因于在YInZnO (YIZO)通道、SiO2栅绝缘体或它们的界面中的电子捕获。我们制备了具有和不具有UV辐射的杂化YIZO TFT,并观察到UV固化通过促进对反应介质(RM)的响应来影响TFT的性能。由于通道材料在源-漏方向上的排列,紫外照射下的TFT表现出更好的性能。©作者2015。由ECS出版。这是一篇基于知识共享署名4.0许可(CC BY, http://creativecommons.org/licenses/by/4.0/)的开放获取文章,该许可允许在任何媒体上不受限制地重复使用该作品,前提是正确引用原始作品。[DOI: 10.1149/2.0031503ssl]版权所有
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