n掺杂GeSbTe缓冲层对Cu/ al2o3基CBRAM开关特性的影响

{"title":"n掺杂GeSbTe缓冲层对Cu/ al2o3基CBRAM开关特性的影响","authors":"Seokjae Lim, Sangheon Lee, J. Woo, Daeseok Lee, A. Prakash, H. Hwang","doi":"10.1149/2.0011507SSL","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"464 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Effects of N-Doped GeSbTe Buffer Layer on Switching Characteristics of Cu/Al2O3-Based CBRAM\",\"authors\":\"Seokjae Lim, Sangheon Lee, J. Woo, Daeseok Lee, A. Prakash, H. Hwang\",\"doi\":\"10.1149/2.0011507SSL\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":11423,\"journal\":{\"name\":\"ECS Solid State Letters\",\"volume\":\"464 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ECS Solid State Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1149/2.0011507SSL\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Solid State Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2.0011507SSL","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}