4H-SiC/Si Heterojunction Bipolar Transistors Fabricated by Surface Activated Bonding

4H-SiC/Si heterojunction bipolar transistors with emitter-up (E-up) and collector-up (C-up) configurations were fabricated by surface activated bonding for the first time. Their electrical characteristics were measured at raised ambient temperatures. The common-base current gain α increased as the temperature was raised in the both E-up and C-up structures. In the E-up structure, α reached to ≈ 0.99 at 573 K. Improvements in both device structures and surface activated bonding conditions should provide further improvements in device performance. © 2015 The Electrochemical Society. [DOI: 10.1149/2.0041511ssl] All rights reserved.