发布求助
文献互助 智能选刊 最新文献

ECS Solid State Letters最新文献

筛选
英文 中文
High Frequency Ni-NiO-Ag Metal-Insulator-Metal Tunnel Diodes Fabricated via Anodic Aluminum Oxide Templates 高频Ni-NiO-Ag金属-绝缘体-金属隧道二极管的阳极氧化铝模板
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0021505SSL
Chongyuan Zhuang, Lei Wang, D. Zhun, Deren Yang
{"title":"High Frequency Ni-NiO-Ag Metal-Insulator-Metal Tunnel Diodes Fabricated via Anodic Aluminum Oxide Templates","authors":"Chongyuan Zhuang, Lei Wang, D. Zhun, Deren Yang","doi":"10.1149/2.0021505SSL","DOIUrl":"https://doi.org/10.1149/2.0021505SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"8 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83424181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
One-Step Synthesis of Blue Light-Emitting ZnxCd1−xTe Quantum Dots in an Aqueous Medium 在水介质中一步合成蓝色发光ZnxCd1−xTe量子点
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0011510SSL
Rongfang Wang, Xingming Wei, C. Liang, Liya Zhou
{"title":"One-Step Synthesis of Blue Light-Emitting ZnxCd1−xTe Quantum Dots in an Aqueous Medium","authors":"Rongfang Wang, Xingming Wei, C. Liang, Liya Zhou","doi":"10.1149/2.0011510SSL","DOIUrl":"https://doi.org/10.1149/2.0011510SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"33 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82651219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Epitaxial Growth of Single-Crystalline Monolayer MoS2 by Two-Step Method 用两步法外延生长单晶单层MoS2
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0041502SSL
Feifei Lan, Zhanping Lai, Ruyue Yan, Yongkuan Xu, Hongjuan Cheng, Song Zhang, Jianli Chen, Zhenyu Jia, Zaien Wang, Chengjun Qi
{"title":"Epitaxial Growth of Single-Crystalline Monolayer MoS2 by Two-Step Method","authors":"Feifei Lan, Zhanping Lai, Ruyue Yan, Yongkuan Xu, Hongjuan Cheng, Song Zhang, Jianli Chen, Zhenyu Jia, Zaien Wang, Chengjun Qi","doi":"10.1149/2.0041502SSL","DOIUrl":"https://doi.org/10.1149/2.0041502SSL","url":null,"abstract":"","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"34 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81903164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Solution-Growth ZnO Nanorods for Light Extraction in GaN-Based Flip-Chip LEDs 溶液生长ZnO纳米棒用于gan基倒装led的光提取
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0061504SSL
N. Lin, S. Shei, S. Chang
{"title":"Solution-Growth ZnO Nanorods for Light Extraction in GaN-Based Flip-Chip LEDs","authors":"N. Lin, S. Shei, S. Chang","doi":"10.1149/2.0061504SSL","DOIUrl":"https://doi.org/10.1149/2.0061504SSL","url":null,"abstract":"Institute of Microelectronics & Department of Electrical Engineering, Institute of Nanotechnology and MicrosystemsEngineering & Department of Materials Science and Engineering, Advanced Optoelectronic Technology Center,Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"41 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72608744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Ambient Constancy of Passivation-Free Ultra-Thin Zinc Tin Oxide Thin Film Transistor 无钝化超薄锌锡氧化物薄膜晶体管的环境常数
ECS Solid State Letters Pub Date : 2015-01-01 DOI: 10.1149/2.0051512SSL
Li-Chih Liu, Jen‐Sue Chen, J. Jeng
{"title":"Ambient Constancy of Passivation-Free Ultra-Thin Zinc Tin Oxide Thin Film Transistor","authors":"Li-Chih Liu, Jen‐Sue Chen, J. Jeng","doi":"10.1149/2.0051512SSL","DOIUrl":"https://doi.org/10.1149/2.0051512SSL","url":null,"abstract":"An ultra-thin (5 nm-thick), unpassivated zinc tin oxide (ZTO) thin-film transistor TFT, fabricated with solution process, exhibits a good field-effect mobility (13 ∼ 14 cm2/Vs), small subthreshold swing (∼0.30 V/dec.) and high on/off current ratio (∼108). The field-effect mobility can be further enhanced by increasing the ZTO thickness to 12 nm and 22 nm. Furthermore, ID-VG characteristics of the 5 nm-thick ZTO TFT remain unaffected, regardless of working in air (60% relative humidity), vacuum or dry O2 atmosphere. The dissimilar TFT characteristics are discussed in terms of oxygen deficiency content, as well as the Fermi level position (EF to EC) for ZTO of various thicknesses to explain the moisture immunity of the 5 nm-thick solution-processed ZTO TFT. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0051512ssl] All rights reserved.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85651526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
High Efficiency Electron Transfer Layer based on Ag-Al Co-Doped ZnS in Organic Lighting Emission Devices 基于Ag-Al共掺杂ZnS的有机发光器件中高效电子传递层
ECS Solid State Letters Pub Date : 2014-12-10 DOI: 10.1149/2.0021502SSL
Xiaoxiao He, Wen-jun Wang, Shuhong Li, Qingru Wang, Wanquan Zheng, Qiang Shi, Yun-long Liu
{"title":"High Efficiency Electron Transfer Layer based on Ag-Al Co-Doped ZnS in Organic Lighting Emission Devices","authors":"Xiaoxiao He, Wen-jun Wang, Shuhong Li, Qingru Wang, Wanquan Zheng, Qiang Shi, Yun-long Liu","doi":"10.1149/2.0021502SSL","DOIUrl":"https://doi.org/10.1149/2.0021502SSL","url":null,"abstract":"Electron transmission improvement in organic light-emitting devices with Ag-Al co-doped ZnS has been demonstrated. The electroluminescence (EL) of device with co-doped ZnS electron transfer layer (ETL) is more than that of devices without ETL and the co-doped ZnS ETL device performs higher EL compared to pure ZnS ETL device. The using of co-doped ZnS can reduce the thickness of ETL from 40 nm to 8 nm and performs comparable efficiency and higher EL. According to the PL spectra studies and current density-voltage characters, the improved electron transmission is attributed to the introduction of impurity energy level and the increased concentration of electron.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"53 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84026659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Highly Efficient Blue Fluorescent Organic Light-Emitting Diodes by Engineering Hole-Transporting/Exciton-Blocking Layer 基于工程空穴传输/激子阻挡层的高效蓝色荧光有机发光二极管
ECS Solid State Letters Pub Date : 2014-11-25 DOI: 10.1149/2.0011502SSL
Jeonghun Kwak, Jangwoo Chae, Su-Gwang Son, Byung-Jun Jung
{"title":"Highly Efficient Blue Fluorescent Organic Light-Emitting Diodes by Engineering Hole-Transporting/Exciton-Blocking Layer","authors":"Jeonghun Kwak, Jangwoo Chae, Su-Gwang Son, Byung-Jun Jung","doi":"10.1149/2.0011502SSL","DOIUrl":"https://doi.org/10.1149/2.0011502SSL","url":null,"abstract":"This paper reports low-voltage and high power efficiency bluefluorescent organic light-emitting diodes (FLOLEDs) using 4,4 � -bis[4(di-4-tolylamino)styryl]biphenyl (DPAVBi) as a fluorescent dye and 9,10-di(naphth-2-yl)anthracene (ADN) as a host. We studied the effect of using 1,1-bis{4-[N,N-di(p-tolyl)amino]-phenyl}cyclohexane (TAPC) as an exciton blocking layer in the blue FLOLEDs, and found the formation of electromers in TAPC at high current density. Based on the efforts toward high power efficiency and stability, we fabricated the blue FLOLEDs exhibiting low driving voltages of 2.9 V for 100 cd m−2 and 3.6 V for 1000 cd m−2 ,a maximum luminance of 43256 cd m−2 at 6.6 V, and a high power efficiency of 9.7 lm W−1 with reduced efficiency roll-off.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"2012 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86357004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Plasma Treatment of Carbon Nanofibers Using an Anode Layer Ion Source for High-Performance Electrochemical Capacitors 用阳极层离子源等离子体处理高性能电化学电容器用纳米碳纤维
ECS Solid State Letters Pub Date : 2014-11-21 DOI: 10.1149/2.0061501SSL
Yu-jin Lee, Do‐Geun Kim, H. Ahn
{"title":"Plasma Treatment of Carbon Nanofibers Using an Anode Layer Ion Source for High-Performance Electrochemical Capacitors","authors":"Yu-jin Lee, Do‐Geun Kim, H. Ahn","doi":"10.1149/2.0061501SSL","DOIUrl":"https://doi.org/10.1149/2.0061501SSL","url":null,"abstract":"We synthesized carbon nanofibers(CNFs) by electrospinning and then activated their surface states via plasma treatment with an anode layer ion source. We studied the effects of various treatment times—0, 400, 800, and 1200 seconds—in order to identify the optimum conditions for plasma treatment. We investigated the morphological and structural properties, and the chemical composition of the CNFs using scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy. The activated CNFs—plasma-treated for 1200s—exhibited excellent capacitance(∼173.25 F/g at 5 mV/s), superb cycling stability(∼92.59%), and the highest energy density(∼6.81 Wh/kg) among the different samples produced.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"78 4 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72668898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Long-Lasting Phosphor Ba3P4O13: Eu2+ 长效荧光粉Ba3P4O13: Eu2+
ECS Solid State Letters Pub Date : 2014-11-13 DOI: 10.1149/2.0051501SSL
Haijie Guo, Wenbo Chen, Wei Zeng, Yuhua Wang, Yanyan Li
{"title":"A Long-Lasting Phosphor Ba3P4O13: Eu2+","authors":"Haijie Guo, Wenbo Chen, Wei Zeng, Yuhua Wang, Yanyan Li","doi":"10.1149/2.0051501SSL","DOIUrl":"https://doi.org/10.1149/2.0051501SSL","url":null,"abstract":"A new long-lasting phosphor Ba3P4O13: Eu2+ has been synthesized through the high temperature solid-state method. The excitation spectrum of Ba2.99P4O13: 0.01Eu(2+) is a broadband from 200 to 450 nm attributed to the 4f(7)-> 4f(6)5d(1) transition of Eu2+ ions. The emission spectrum of Ba2.99P4O13: 0.01Eu(2+) exhibits an asymmetric emission band ascribed to the 4f(7)-> 4f(6)5d(1) transition of Eu2+ ions in two different sites. Under the optimum doping concentration, the long-lasting phosphorescence (LLP) can persist for nearly 85 min at recognizable intensity level (>= 0.32 mcd/m(2)). The mechanism of afterglow is discussed briefly. (C) 2014 The Electrochemical Society. All rights reserved.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"4 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88588114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Electroforming-Free and Multilevel Resistance Switching Properties in Al/TiOx/Cu Structure Al/TiOx/Cu结构的无电铸和多电平电阻开关特性
ECS Solid State Letters Pub Date : 2014-11-11 DOI: 10.1149/2.0021501SSL
L. W. Zhou, X. Shao, C. Chen, Hao Jiang, Jian Wang, Ran Chen, Qing M. Zong, J. S. Zhao, L. Lv
{"title":"Electroforming-Free and Multilevel Resistance Switching Properties in Al/TiOx/Cu Structure","authors":"L. W. Zhou, X. Shao, C. Chen, Hao Jiang, Jian Wang, Ran Chen, Qing M. Zong, J. S. Zhao, L. Lv","doi":"10.1149/2.0021501SSL","DOIUrl":"https://doi.org/10.1149/2.0021501SSL","url":null,"abstract":"Resistance random access memory (RRAM) in various oxide materials,especiallybinaryoxidematerialssuchasTiO2, 1 ZrO2, 2 HfO2, 3 and ZnO, 4 has attracted considerable attention as one of the promising applications in next-generation nonvolatile semiconductor memory devices. Although the resistance switching (RS) materials can be classified into several groups according to switching mechanisms, this study focuses on combined different mechanisms effects on the RS performance in Al/TiOx/Cu. As Cu is an active metal in the electrochemical metallization memory (ECM), 5 adopting Cu as electrode may induce Cu conductive filaments (CFs). Meanwhile, because of the higher oxidation potential of Al compared with Ti, 6 adopting Al onTiOx mayinducetheoxygenvacancy (Vo)relatedRSmechanisms, such as electronic switching related with the trapping and detrapping of carriers along the Vo channels. 7 Particularly, when RRAM devices is programmed, a filament with trap-controlled space charge limited current (SCLC) could be formed, while a metallic CFs could also be formed. Therefore, multilevel resistance states may be obtained by forming different filaments inside the device. However, research on combining these two mechanisms remains to be clarified. During the resistance switching process, the “electroforming” process is usually needed to obtain the resistance switching. However, this process often results in the random fluctuations of switching parameters and needs a much higher bias, which are generally unfavorable for the device fabrication and operation. 8 In this paper, the characteristics of multilevel resistance switching, electroforming-free and low Ireset (the maximum current level changes from LRS to HRS) were investigated through Al/TiOx/Cu structure. The relationship between electroforming-free and low Ireset will be elucidated in this paper, as well as the multilevel resistance switching mechanism.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78318311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信