N. Yamamoto, K. Morisawa, J. Murakami, Nakatani Yasuhiro
{"title":"传统磁控溅射制备ITO纳米线","authors":"N. Yamamoto, K. Morisawa, J. Murakami, Nakatani Yasuhiro","doi":"10.1149/2.0131407SSL","DOIUrl":null,"url":null,"abstract":"ITO nanowires could be grown in oxygen-free Ar sputtering gas directly after the formation of ITO films with thicknesses of 10–50 nm using conventional magnetron sputtering. Growth of nanorods occurred at substrate temperatures of about 100°C and higher, whereas nanowires with lengths of 1–10 μm and diameters of roughly 20–200 nm were formed at about 175°C and above. The diameter, length and density of the nanowires could be controlled by varying the sputtering time, substrate temperature, and SnO2 content in the ITO sputtering target.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"10 1","pages":"84"},"PeriodicalIF":0.0000,"publicationDate":"2014-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"Formation of ITO Nanowires Using Conventional Magnetron Sputtering\",\"authors\":\"N. Yamamoto, K. Morisawa, J. Murakami, Nakatani Yasuhiro\",\"doi\":\"10.1149/2.0131407SSL\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"ITO nanowires could be grown in oxygen-free Ar sputtering gas directly after the formation of ITO films with thicknesses of 10–50 nm using conventional magnetron sputtering. Growth of nanorods occurred at substrate temperatures of about 100°C and higher, whereas nanowires with lengths of 1–10 μm and diameters of roughly 20–200 nm were formed at about 175°C and above. The diameter, length and density of the nanowires could be controlled by varying the sputtering time, substrate temperature, and SnO2 content in the ITO sputtering target.\",\"PeriodicalId\":11423,\"journal\":{\"name\":\"ECS Solid State Letters\",\"volume\":\"10 1\",\"pages\":\"84\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-02-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ECS Solid State Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1149/2.0131407SSL\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Solid State Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2.0131407SSL","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Formation of ITO Nanowires Using Conventional Magnetron Sputtering
ITO nanowires could be grown in oxygen-free Ar sputtering gas directly after the formation of ITO films with thicknesses of 10–50 nm using conventional magnetron sputtering. Growth of nanorods occurred at substrate temperatures of about 100°C and higher, whereas nanowires with lengths of 1–10 μm and diameters of roughly 20–200 nm were formed at about 175°C and above. The diameter, length and density of the nanowires could be controlled by varying the sputtering time, substrate temperature, and SnO2 content in the ITO sputtering target.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
