Current Applied Physics最新文献_第4页

Threshold shift mechanism in fluorine-doped indium-gallium-zinc-oxide thin film transistors via defect analysis 基于缺陷分析的氟掺杂铟镓锌氧化物薄膜晶体管的阈值移位机制

IF 3.1 4区物理与天体物理

Current Applied Physics Pub Date : 2025-08-08 DOI: 10.1016/j.cap.2025.08.001

Moonil Jung , Jeeeun Yang , Dong-Jin Yun , Sung Heo , Sangwook Kim , Byoungdeog Choi

{"title":"Threshold shift mechanism in fluorine-doped indium-gallium-zinc-oxide thin film transistors via defect analysis","authors":"Moonil Jung , Jeeeun Yang , Dong-Jin Yun , Sung Heo , Sangwook Kim , Byoungdeog Choi","doi":"10.1016/j.cap.2025.08.001","DOIUrl":"10.1016/j.cap.2025.08.001","url":null,"abstract":"<div><div>In this study, we systematically investigate the threshold voltage (V<sub>th</sub>) shift mechanism in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors subjected to varying fluorine (F) implantation doses. Fluorine was implanted into a-IGZO at a dose of 1 × 10<sup>20</sup> cm<sup>−3</sup> with an implantation energy of 30 keV, resulting in a negative V<sub>th</sub> shift compared to undoped samples. In contrast, higher doping concentrations (5 × 10<sup>20</sup> and 1 × 10<sup>21</sup> cm<sup>−3</sup>) induced positive V<sub>th</sub> shifts.</div><div>To elucidate this mechanism, we conducted Current Transient Spectroscopy (CTS), X-ray Photoelectron Spectroscopy (XPS), and Reflection Electron Energy Loss Spectroscopy (REELS). The results indicate that moderate F doping shifts the Fermi level closer to the conduction band, causing a negative V<sub>th</sub> shift. However, at higher doping levels, shallow defect states (D1) emerge, facilitating the recombination of conduction band electrons into these states. This process reduces the on-current (I<sub>on</sub>) and leads to a positive V<sub>th</sub> shift.</div><div>Fluorine doping enhances device stability against negative bias temperature instability (NBTI), while positive bias temperature instability (PBTI) degrades increasingly with higher doping. While our experiments did not encompass the full range of doping concentrations required for simultaneous optimization of both, our results suggest that lower fluorine doses may offer a balanced approach. Through direct defect characterization, this study clarifies the critical role of such defects in the threshold voltage shift mechanism of oxide thin-film transistors, providing valuable guidance for reliability improvements.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"79 ","pages":"Pages 82-87"},"PeriodicalIF":3.1,"publicationDate":"2025-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144842526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effective method for measuring structural influence through changes in droplet spreadability 通过液滴可展性变化测量结构影响的有效方法

IF 3.1 4区物理与天体物理

Current Applied Physics Pub Date : 2025-08-06 DOI: 10.1016/j.cap.2025.08.003

Seonghyeon Kim , Juheon Kim , Sanghyun Lee , Hyungmo Kim , Sangmin Lee

引用次数: 0

Application of external electric fields for Li+/Na+ ions separation in a graphene-based nano-channel: a computational study 外电场在石墨烯基纳米通道中Li+/Na+离子分离中的应用：计算研究

IF 3.1 4区物理与天体物理

Current Applied Physics Pub Date : 2025-08-06 DOI: 10.1016/j.cap.2025.08.002

Zeinab Rahimi , Amir Lohrasebi

{"title":"Application of external electric fields for Li+/Na+ ions separation in a graphene-based nano-channel: a computational study","authors":"Zeinab Rahimi , Amir Lohrasebi","doi":"10.1016/j.cap.2025.08.002","DOIUrl":"10.1016/j.cap.2025.08.002","url":null,"abstract":"<div><div>This study uses molecular dynamics simulations to investigate the efficient separation of lithium (Li<sup>+</sup>) and sodium (Na<sup>+</sup>) ions in graphene-based nano-channels under the influence of an electric field. The effect of nano-channel dimensions, including length and width, on the ion separation performance was investigated. Our results show that nano-channels with a length of 12 nm and a width of 1.5 nm exhibit optimal ion separation at the present electric field intensity of 4 mV/Å, with lithium ions preferentially accumulating in the designated storage compartments. This separation efficiency is primarily due to the mass-dependent electrophoretic mobility of the ions, with lithium ions migrating faster than sodium ions in the same electric field due to their lower mass and higher acceleration. In addition, the narrow channel width provides a more controlled laminar flow, minimizing turbulence and improving ion transport selectivity. This study also highlights the role of thermal effects, ion diffusion, and electrostatic interactions with the graphene surface in improving the separation process.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"79 ","pages":"Pages 66-76"},"PeriodicalIF":3.1,"publicationDate":"2025-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144826424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Strain-induced anisotropic effects on the electronic properties and dipole moment differences of Janus WSeTe 应变诱导的各向异性对Janus WSeTe电子特性和偶极矩差的影响

IF 3.1 4区物理与天体物理

Current Applied Physics Pub Date : 2025-07-31 DOI: 10.1016/j.cap.2025.07.011

Suejeong You , Heesang Kim , Nammee Kim

{"title":"Strain-induced anisotropic effects on the electronic properties and dipole moment differences of Janus WSeTe","authors":"Suejeong You , Heesang Kim , Nammee Kim","doi":"10.1016/j.cap.2025.07.011","DOIUrl":"10.1016/j.cap.2025.07.011","url":null,"abstract":"<div><div>Strain engineering in Janus transition metal dichalcogenides (TMDCs) is a powerful approach for tuning electronic, optical, and mechanical properties. Using first-principles calculations, we explore the anisotropic effects of uniaxial and biaxial strains on the Janus TMDCs. Our results reveal that biaxial strain induces symmetric modifications, leading to uniform changes in the lattice constants and electronic band structures. However, uniaxial strain introduces anisotropy, with the structural and electronic responses depending on the strain direction. Under small uniaxial strain (8%), results in minimal differences between the zigzag and armchair directions, a higher strain (12%) leads to remarkable anisotropic effects. In this regime, the band structure and density of states (DOS) exhibit distinct variations along the two principal crystallographic directions, highlighting the directional dependence of strain-induced modifications. These findings provide insights into strain-induced anisotropy in Janus TMDCs and offer guidance for their application in nanoelectronic and optoelectronic devices.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"79 ","pages":"Pages 59-65"},"PeriodicalIF":3.1,"publicationDate":"2025-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144770521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electron-mediated triplet energy transfer in CsPbBr3 nanoplatelet-Rhodamine interface CsPbBr3纳米血小板-罗丹明界面中电子介导的三重态能量传递

IF 2.4 4区物理与天体物理

Current Applied Physics Pub Date : 2025-07-24 DOI: 10.1016/j.cap.2025.07.010

Chaochao Qin, Mingjun Zhao, Chaofan Fang, Jie Li, Minghuan Cui, Haiying Wang, Shuwen Zheng, Pan Song, Jian Song, Zhaoyong Jiao, Shuhong Ma, Jicai Zhang, Guangrui Jia, Yuhai Jiang, Zhongpo Zhou

{"title":"Electron-mediated triplet energy transfer in CsPbBr3 nanoplatelet-Rhodamine interface","authors":"Chaochao Qin, Mingjun Zhao, Chaofan Fang, Jie Li, Minghuan Cui, Haiying Wang, Shuwen Zheng, Pan Song, Jian Song, Zhaoyong Jiao, Shuhong Ma, Jicai Zhang, Guangrui Jia, Yuhai Jiang, Zhongpo Zhou","doi":"10.1016/j.cap.2025.07.010","DOIUrl":"10.1016/j.cap.2025.07.010","url":null,"abstract":"<div><div>Two-dimensional (2D) cesium lead halide perovskite CsPbBr<sub>3</sub> nanoplatelets have received significant notice due to their potential applications in optoelectronics, photocatalysis, energy storage, and sensing. Energy and charge transfer from the nanoplatelet to a dye molecule provides an auxiliary possibility to control the properties of the perovskite-dye hybrid and the interaction of the singlet and triplet states. However, it remains poorly understood for the energy transfer mechanisms of singlets and triplets within hybrid systems. In this paper, the triplet energy transfer from CsPbBr<sub>3</sub> nanoplatelets to surface-anchored Rhodamine B isothiocyanate (RITC) molecules is investigated by using the femtosecond time-resolved transient absorption spectroscopy. During the energy transfer, the hybrid experiences electron transfer from CsPbBr<sub>3</sub> to RITC to form RITC<sup>−</sup>, hole transfer from CsPbBr<sub>3</sub> to RITC<sup>−</sup> to form RITC triplets (<sup>3</sup>RITC∗). The results provide deep insights into the photogenerated carrier dynamics and a new way to tune the energy transfer in a perovskite-dye hybrid.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"79 ","pages":"Pages 52-58"},"PeriodicalIF":2.4,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144711137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Luminescent sensing carbon dots by using different portions of disposable face mask for recycling without waste 利用一次性面膜的不同部分进行发光感应碳点回收，不浪费

IF 2.4 4区物理与天体物理

Current Applied Physics Pub Date : 2025-07-17 DOI: 10.1016/j.cap.2025.07.007

Sung Jun Park , Hyun Kyoung Yang

引用次数: 0

Lanthanum and oxygen incorporated MoS2 for advanced aqueous zinc ion batteries 镧和氧结合MoS2用于先进的水性锌离子电池

IF 2.4 4区物理与天体物理

Current Applied Physics Pub Date : 2025-07-16 DOI: 10.1016/j.cap.2025.07.009

Xiaoxue Zhao , Chao Jiang , Yanan Li , Mengzhou Yu , Jiqi Zheng , Tianming Lv , Yang Mu , Changgong Meng

{"title":"Lanthanum and oxygen incorporated MoS2 for advanced aqueous zinc ion batteries","authors":"Xiaoxue Zhao , Chao Jiang , Yanan Li , Mengzhou Yu , Jiqi Zheng , Tianming Lv , Yang Mu , Changgong Meng","doi":"10.1016/j.cap.2025.07.009","DOIUrl":"10.1016/j.cap.2025.07.009","url":null,"abstract":"<div><div>Aqueous zinc ion batteries (ZIB) are gaining more attention due to their potential for sustainable energy storage solutions. However, the limited selection of appropriate anodic materials presents a significant obstacle to the widespread development of ZIB. To provide more options for anodic materials, constant efforts are necessary to develop anodes with high Zn<sup>2+</sup> mobility and excellent reversibility. Herein, we fabricate La and O co-incorporated MoS<sub>2</sub> nanosheets (denoted as La-O-MoS<sub>2</sub>) using a facile and universal strategy, which significantly enhances the specific capacity of MoS<sub>2</sub>. The La-O-MoS<sub>2</sub> shows expanded interlayer spacing, and this extended interlayer channel plays a crucial role in the transportation of [Zn(H<sub>2</sub>O)<sub>6</sub>]<sup>2+</sup>. As a result, La-O-MoS<sub>2</sub> achieves higher specific capacity compared to MoS<sub>2</sub>. The rare earth doping strategy is also capable of generating innovative materials with distinctive structures that can be used to various multivalent ion batteries.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"79 ","pages":"Pages 22-28"},"PeriodicalIF":2.4,"publicationDate":"2025-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144665496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantum phase-change materials on amorphous silicon film doped with impurities 掺杂杂质的非晶硅薄膜上的量子相变材料

IF 2.4 4区物理与天体物理

Current Applied Physics Pub Date : 2025-07-15 DOI: 10.1016/j.cap.2025.07.008

Wei-Qi Huang , Zhong-Mei Huang , Yin-Lian Li , Shi-Rong Liu

{"title":"Quantum phase-change materials on amorphous silicon film doped with impurities","authors":"Wei-Qi Huang , Zhong-Mei Huang , Yin-Lian Li , Shi-Rong Liu","doi":"10.1016/j.cap.2025.07.008","DOIUrl":"10.1016/j.cap.2025.07.008","url":null,"abstract":"<div><div>The quantum phase change represents a transition to crystallizing quantum structure from amorphous silicon doped with impurities prepared in sputtering and depositing process by pulsed laser interaction, in which the silicon nanocrystals and the Yb-Er nanoalloy with direct bandgap are dramatic generated in irradiation process of laser or coherent electron beam, respectively. Here, the resonance among photon, electron and phonon occurs on surface with various impurities for quantum phase change, such as quantum dots crystallizing. It is demonstrated that the crystallizing process is faster and more stable while the plasmon energy produced by laser photon is near the phonon energy in annealing of laser irradiation, or while the energy of coherent electron is close to the phonon energy. Through quantum phase transition, the nanocrystals with various structures are observed in the TEM images, where the change characteristics in the low-dimensional quantum phase occur. It is interesting that the quantum phase change is obviously different in various impurities on surface of Si film, where the stronger condensing in crystallization doped with oxygen or erbium is measured. Under irradiation of coherent electron beam for suitable time, the nanostructure of Yb-Er alloy is observed on silicon, in which we find the new electron states near 0.93 eV for better emission at 1350 nm in the second communication window. And in the alloy of Yb-Er, the Er condensing and clustering are avoided in the crystallizing process for better emission near 1550 nm in the third optical communication window.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"79 ","pages":"Pages 14-21"},"PeriodicalIF":2.4,"publicationDate":"2025-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144665497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Time and spatially resolved analysis of single quantum well InGaN/GaN photoluminescence blinking at multiple sample frequencies 多采样频率闪烁单量子阱InGaN/GaN光致发光的时空分辨分析

IF 2.4 4区物理与天体物理

Current Applied Physics Pub Date : 2025-07-14 DOI: 10.1016/j.cap.2025.07.003

Kotaro Oikawa , Mitsuru Funato , Yoichi Kawakami , Ruggero Micheletto

引用次数: 0

Tailoring electrical properties and thermal stability of PNT-PZT ceramics via Mn doping 通过Mn掺杂调整PNT-PZT陶瓷的电学性能和热稳定性

IF 2.4 4区物理与天体物理

Current Applied Physics Pub Date : 2025-07-10 DOI: 10.1016/j.cap.2025.07.005

Yan Mu , Junjun Wang , Bingsen Wang , Yufang Jiao , Jian He , Meng Liu , Che Sun , Shaoyang Yuan , Meijing Ai , Danqing Liu , Fengmin Wu

{"title":"Tailoring electrical properties and thermal stability of PNT-PZT ceramics via Mn doping","authors":"Yan Mu , Junjun Wang , Bingsen Wang , Yufang Jiao , Jian He , Meng Liu , Che Sun , Shaoyang Yuan , Meijing Ai , Danqing Liu , Fengmin Wu","doi":"10.1016/j.cap.2025.07.005","DOIUrl":"10.1016/j.cap.2025.07.005","url":null,"abstract":"<div><div>This study presents a comprehensive investigation of the structural, dielectric, and piezoelectric properties of Mn-doped 0.12PNT-0.88PZT ceramics. X-ray diffraction (XRD) confirms the formation of pure perovskite tetragonal phases in all compositions. The incorporation of Mn exerts a pronounced influence on the functional properties of the ceramics, including dielectric, ferroelectric and piezoelectric properties etc. Notably, the 1.5 mol% Mn-doped 0.12PNT-0.88PZT composition demonstrates enhanced performance, achieving <em>ɛ</em><sub>r</sub> = 2838, <em>P</em><sub>r</sub> = 15.2 μC/cm<sup>2</sup>, <em>d</em><sub>33</sub> = 440 pC/N, while the 2.5 mol% Mn-doped variant achieves an exceptional <em>Q</em><sub>m</sub> of 730. Rayleigh analysis of the dielectric response reveals that the extrinsic contribution, quantified by the Rayleigh parameter (<em>α</em>), peaks at a Mn doping concentration of 1.5 mol%. These findings indicate that as extrinsic effects intensify, domain switching and grain boundary contributions to the electrical properties become increasingly dominant. Furthermore, the 1.5 mol% Mn-doped 0.12PNT-0.88PZT ceramics demonstrate excellent temperature stability in piezoelectric coefficient, electromechanical coupling factor, and mechanical quality factor over a broad temperature range from the room temperature to 120 °C. This work provides critical insights into the role of Mn doping in enhancing the functional properties of PNT-PZT ceramics and highlights its potential for applications requiring stable performance under varying thermal conditions.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"78 ","pages":"Pages 67-72"},"PeriodicalIF":2.4,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144611736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0