{"title":"Nanostructured bismuth oxide for enhanced diagnostic X-ray shielding: A comparative study","authors":"Mahdieh Ghasemi-Nejad , Leila Gholamzadeh , Ruhollah Adeli , Seyed Pezhman Shirmardi","doi":"10.1016/j.cap.2026.01.015","DOIUrl":"10.1016/j.cap.2026.01.015","url":null,"abstract":"<div><div>The development of flexible, lead-free nanocomposites has attracted considerable attention for radiation-shielding applications. In this study, polyvinyl chloride (PVC) nanocomposites containing 50 wt% Bi<sub>2</sub>O<sub>3</sub> nanostructures with distinct morphologies—spherical nanoparticles, nanowires, and nanoplates—were fabricated to investigate the morphology-dependent X-ray attenuation behavior. Attenuation measurements were carried out at 50, 110, and 150 kV using a standard setup. The results revealed a pronounced influence of particle morphology on both the mass attenuation coefficient (μ/ρ) and shielding efficiency. The composite incorporating spherical Bi<sub>2</sub>O<sub>3</sub> nanoparticles exhibited the best overall performance, with a μ/ρ value of 2.39 cm<sup>2</sup>/g, an attenuation of 96.23 %, and a 0.25 mm Pb equivalence, achieved using 0.25 cm of the nanospherical composite layer at 150 kV. This superior performance, maintained across all tested energies, is attributed to enhanced packing density and reduced interparticle voids in the spherical structures. These findings demonstrate that PVC–Bi<sub>2</sub>O<sub>3</sub> nanocomposites containing spherical nanoparticles offer strong potential as flexible, non-toxic, and efficient alternatives to conventional lead-based shielding materials.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"85 ","pages":"Pages 42-48"},"PeriodicalIF":3.1,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146075628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Current Applied PhysicsPub Date : 2026-04-01Epub Date: 2026-01-16DOI: 10.1016/j.cap.2026.01.008
Tae Hoon Kim, Cheol Jun Kim, Min Kyung Ku, Taehee Noh, Minu Kang, Hyeon Su Seong, Seung Jin Kang, Bo Soo Kang
{"title":"Electrical cycling induced evolution of internal resistance and interfacial capacitance distributions in PZT thin-film capacitors","authors":"Tae Hoon Kim, Cheol Jun Kim, Min Kyung Ku, Taehee Noh, Minu Kang, Hyeon Su Seong, Seung Jin Kang, Bo Soo Kang","doi":"10.1016/j.cap.2026.01.008","DOIUrl":"10.1016/j.cap.2026.01.008","url":null,"abstract":"<div><div>Ferroelectrics have attracted academic and industrial interest owing to their functional properties. However, their reliability is often degraded by fatigue under repeated electrical cycling. In this study, we investigate the evolution of defect-related internal resistance and interfacial capacitance in PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> (PZT) thin-film capacitors by combining first-order reversal curve (FORC) analysis with a switching-current circuit model. The proposed framework provides distributions of internal resistance and interfacial capacitance and tracks their evolution during electrical cycling. The FORC results reveal a gradual reduction in the overall switching density accompanied by a narrowing of the coercive-voltage distribution and a shift of the internal-bias distribution toward zero, indicating a selective suppression of switching events under extreme local conditions. In addition, the average internal resistance exhibits a clear correlation with leakage current, while the interfacial capacitance decreases monotonically with cycling, which is interpreted as an increase in the effective oxide thickness. This purely electrical analysis provides quantitative insight into fatigue-induced inhomogeneous degradation in PZT thin-film capacitors and can be extended to other ferroelectric material systems.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"85 ","pages":"Pages 1-7"},"PeriodicalIF":3.1,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145996245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Current Applied PhysicsPub Date : 2026-04-01Epub Date: 2026-01-19DOI: 10.1016/j.cap.2026.01.009
Md Minhaj Ali , Nitish Ghosh , P. Dey
{"title":"Temperature dependent magneto-optical response in hybrid inorganic-organic p-Si (100)/La0.7Sr0.3MnO3/ CuPc/Au heterostructure: An interface driven phenomenon","authors":"Md Minhaj Ali , Nitish Ghosh , P. Dey","doi":"10.1016/j.cap.2026.01.009","DOIUrl":"10.1016/j.cap.2026.01.009","url":null,"abstract":"<div><div>We have investigated bias-dependent spintronic and optospintronic properties in a Si(100)/La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub>(LSMO)/CuPc/Au heterostructure under 600 nm red light(L), magnetic fields(H), and temperatures from 300 to 50 K. The specific aim was to understand the role of external perturbation in influencing charge and spin conduction at the inorganic-organic interface. Intriguingly, an asymmetric I-<em>V</em> with a rectification ratio of 6100 % at 300 K, which reduces to 63 % at 50 K, is observed. Spin-dependent conduction of “spin-polarised electrons” across the magnetic LSMO/CuPc interface dominates the positive bias resistance temperature(R-T) curve. A bias-dependent conduction mechanism, as well as bias-dependent magnetoresistance (MR) of −80 % and −20 % at 300 K, were observed under positive and negative bias, respectively. MR readings dropped significantly with 5.43 mW/cm<sup>2</sup> light under both positive and negative biases. These findings reveal the potential of hybrid LSMO/CuPc heterostructures for bias-tunable spintronic and optospintronic applications.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"85 ","pages":"Pages 31-41"},"PeriodicalIF":3.1,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146036638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Current Applied PhysicsPub Date : 2026-04-01Epub Date: 2026-01-19DOI: 10.1016/j.cap.2026.01.011
Seungho Yu , Ki Chul Kim
{"title":"High-throughput screening of metal‒organic frameworks for the selective capture of sulfur hexafluoride from air","authors":"Seungho Yu , Ki Chul Kim","doi":"10.1016/j.cap.2026.01.011","DOIUrl":"10.1016/j.cap.2026.01.011","url":null,"abstract":"<div><div>Owing to the high global warming potential of sulfur hexafluoride (SF<sub>6</sub>), its selective capture from air is critical to mitigating its environmental impact. In this study, a high-throughput screening of the 2019 computation-ready metal–organic framework (MOF) database, known as the CoRE MOF database, which comprises over 14,000 MOFs, is conducted to identify promising candidates for the selective capture of SF<sub>6</sub>. A cascade-type screening approach narrows the dataset to 542 MOFs and categorized them into subsets with and without open metal sites, namely, OMS-RD and NOMS-RD, respectively. Comprehensive analyses using Henry's constant and Grand Canonical Monte Carlo simulations reveal the optimal structural and chemical features of MOFs with high-performance parameters, such as pore size, void fraction, and surface area. The functionalization of top-performing MOFs achieves considerable performance enhancements, particularly among the NOMS-RD candidates, with fluorine and thiol groups playing a core role in the selectivity improvement. This study provides a systematic approach for the rational design and subsequent synthesis of MOFs with efficient greenhouse gas capture ability.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"85 ","pages":"Pages 13-23"},"PeriodicalIF":3.1,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146036639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Current Applied PhysicsPub Date : 2026-04-01Epub Date: 2026-01-23DOI: 10.1016/j.cap.2026.01.019
Yuseong Yang, Min Soo Moon, Jin Young Park, Dongil Kim, Geonu Park, Ji Yoon Hwang, Junkyoung Kim, Gang Hee Han, Seung Ryong Park
{"title":"Raman spectroscopic studies of strong interaction between CVD grown Te chain and 1T′-MoTe2 substrate","authors":"Yuseong Yang, Min Soo Moon, Jin Young Park, Dongil Kim, Geonu Park, Ji Yoon Hwang, Junkyoung Kim, Gang Hee Han, Seung Ryong Park","doi":"10.1016/j.cap.2026.01.019","DOIUrl":"10.1016/j.cap.2026.01.019","url":null,"abstract":"<div><div>Tellurium (Te) crystals possess a one-dimensional chain structure and have attracted considerable attention due to their intrinsic chirality. Recently, it has been reported that large-scale Te thin films can be grown on quasi-one-dimensional 1T′-MoTe<sub>2</sub> substrates by chemical vapor deposition. In these samples, we observe that while most Te flakes grow along a common in-plane direction, a subset adopts a different orientation within the same 1T′-MoTe<sub>2</sub> grain. Here, we perform a comparative study of these two types of Te flakes. The polarization-angle-dependent reflection measurements reveal a pronounced difference in optical anisotropy between the two orientations. To elucidate the origin of this behavior, we further conduct polarization-angle-dependent Raman spectroscopy. The results clearly show orientation-dependent changes in the symmetry of specific phonon modes, reflecting strong interactions between the Te chains and the underlying 1T′-MoTe<sub>2</sub> substrate.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"85 ","pages":"Pages 49-55"},"PeriodicalIF":3.1,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146075630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Current Applied PhysicsPub Date : 2026-04-01Epub Date: 2026-01-20DOI: 10.1016/j.cap.2026.01.007
Xiao Zhang, Liang Guo, Tao Peng, Bingcheng Luo
{"title":"Self-powered neuromorphic photoresponses of ferroelectric AlScN/Si heterostructures","authors":"Xiao Zhang, Liang Guo, Tao Peng, Bingcheng Luo","doi":"10.1016/j.cap.2026.01.007","DOIUrl":"10.1016/j.cap.2026.01.007","url":null,"abstract":"<div><div>Aluminum scandium nitride (AlScN) thin films have emerged as promising materials for developing energy-efficient devices, uniquely combining wide-bandgap semiconducting and ferroelectric properties. Here, we report a self-powered and switchable photoresponse in ferroelectric AlScN/Si heterostructures, driven by the synergy between the depolarization field and the built-in electric field. Crucially, the upward polarization state yields a persistent photoresponse, enabling the emulation of critical biological functions, such as short-term and long-term synaptic plasticity. This work demonstrates an alternative route for engineering neuromorphic photoresponse via ferroelectric polarization, potentially enabling applications in energy-efficient intelligent optoelectronic systems.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"85 ","pages":"Pages 8-12"},"PeriodicalIF":3.1,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146036640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Current Applied PhysicsPub Date : 2026-04-01Epub Date: 2026-01-21DOI: 10.1016/j.cap.2026.01.010
Jinmyeong Han, Jisang Hong
{"title":"Potential gap permanent magnet of Heusler type Ni2-xMnxCoFe (x = 0, 0.25)","authors":"Jinmyeong Han, Jisang Hong","doi":"10.1016/j.cap.2026.01.010","DOIUrl":"10.1016/j.cap.2026.01.010","url":null,"abstract":"<div><div>Manufacturing rare-earth free permanent magnets is an intriguing issue in modern advanced technology for several device applications. We investigate the temperature-dependent magnetic properties of all-3d Heusler alloy-based rare-earth free material Ni<sub>2</sub>CoFe and Ni<sub>1.75</sub>Mn<sub>0.25</sub>CoFe. Both systems have ferromagnetic ground states with Curie temperatures of about 975 K for Ni<sub>2</sub>CoFe and 1071 K for Ni<sub>1.75</sub>Mn<sub>0.25</sub>CoFe. We obtain the uniaxial anisotropy constants of 0.57 MJ/m<sup>3</sup> and 0.77 MJ/m<sup>3</sup> for Ni<sub>2</sub>CoFe and Ni<sub>1.75</sub>Mn<sub>0.25</sub>CoFe. The Ni<sub>2</sub>CoFe has coercivity of 0.997 T, whereas the Ni<sub>1.75</sub>Mn<sub>0.25</sub>CoFe shows 1.928 T at zero Kelvin. At room temperature, the coercivity field is decreased to 0.843 T (Ni<sub>2</sub>CoFe) and 1.305 T (Ni<sub>1.75</sub>Mn<sub>0.25</sub>CoFe). Both structures exhibit semi-hard magnetic properties at room temperature. We obtained the maximum energy product of 311 kJ/m<sup>3</sup> in Ni<sub>2</sub>CoFe and 341 kJ/m<sup>3</sup> in Ni<sub>1.75</sub>Mn<sub>0.25</sub>CoFe at room temperature. When increasing the temperature up to 600 K, the Ni<sub>1.75</sub>Mn<sub>0.25</sub>CoFe shows higher maximum energy product (271 kJ/m<sup>3</sup>) than the Ni<sub>2</sub>CoFe (197 kJ/m<sup>3</sup>). Furthermore, the Ni<sub>1.75</sub>Mn<sub>0.25</sub>CoFe are less sensitive to the demagnetization factor than Ni<sub>2</sub>CoFe. Our results may indicate that the Heusler type Ni<sub>1.75</sub>Mn<sub>0.25</sub>CoFe have the potential for rare-earth free gap magnet.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"85 ","pages":"Pages 24-30"},"PeriodicalIF":3.1,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146036721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Current Applied PhysicsPub Date : 2026-04-01Epub Date: 2026-01-23DOI: 10.1016/j.cap.2026.01.013
Farah Fattouh, Samaya El Samad, Mohammed Khalaf, Salem Marhaba
{"title":"Plasmonic properties of spherical platinum nanoparticles","authors":"Farah Fattouh, Samaya El Samad, Mohammed Khalaf, Salem Marhaba","doi":"10.1016/j.cap.2026.01.013","DOIUrl":"10.1016/j.cap.2026.01.013","url":null,"abstract":"<div><div>This paper investigates the optical properties of platinum nanoparticles. The finite element method is used to calculate the optical response of nanoparticles, considering variations in their size, the surrounding medium, and the interparticle distance in dimer nanoparticles. As the size of nanoparticles increases, there is a notable shift in the spectral position of the localized surface plasmon resonance towards longer wavelengths. A noticeable improvement in the LSPR peak is also observed with an increase in the dielectric function of the medium. Moreover, reducing the distance between nanoparticles enhances the localized surface plasmon resonance, which is a result of plasmonic coupling occurring between the adjacent nanoparticles. The extinction, absorption, and scattering optical responses depend on the direction of polarized light. A noticeable increase in the magnitude of the localized surface plasmon resonance, shifting to the near infrared, has been observed in the longitudinal polarization compared to the transverse polarization. We highlight that while gold and silver are characterized by low-loss scattering, platinum's electronic structure facilitates a dominant absorption response and superior hot-carrier generation, bridging the gap between nanophotonics and high-performance catalysis.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"85 ","pages":"Pages 56-68"},"PeriodicalIF":3.1,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146075629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Current Applied PhysicsPub Date : 2026-04-01Epub Date: 2026-01-23DOI: 10.1016/j.cap.2026.01.014
Songyi Han , Jeong-Min Woo , Byungjun Oh , Woosub Byun , Min-Su Park , Dae-Myeong Geum
{"title":"Implementation of enhancement-mode InGaAs/InAlAs HEMTs by hole delta-doping in a buffer-layer: A simulation study","authors":"Songyi Han , Jeong-Min Woo , Byungjun Oh , Woosub Byun , Min-Su Park , Dae-Myeong Geum","doi":"10.1016/j.cap.2026.01.014","DOIUrl":"10.1016/j.cap.2026.01.014","url":null,"abstract":"<div><div>We analyzed the fabrication method and DC characteristics of an InGaAs/InAlAs enhancement-mode (E-mode) high-electron mobility transistor (HEMT) with hole delta(δ)-doping applied to the InAlAs buffer layer through simulation results. At a drain voltage (<em>V</em><sub>D</sub>) = 0.5 V, the threshold voltage (<em>V</em><sub>TH</sub>) was −0.65 V for the device without hole δ-doping in the buffer layer. However, the <em>V</em><sub>TH</sub> increased to a maximum of 0.03 V at <em>V</em><sub>D</sub> = 0.5 V by modifying the ratio of electron δ-doping and applying optimal hole δ-doping to the buffer layer. This was attributed to the hole δ-doping inducing energy band bending in the channel and minimizing impurity scattering. These results confirm that epitaxial engineering enables E-mode HEMT operation, contributing to reduced power consumption and optimizing circuit design for future applications.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"85 ","pages":"Pages 69-74"},"PeriodicalIF":3.1,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146075671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Current Applied PhysicsPub Date : 2026-03-01Epub Date: 2026-01-02DOI: 10.1016/j.cap.2025.12.020
Jaewook Lim , Juhee Jeon , Yunwoo Shin , Jeongyun Oh , Hyojoo Heo , Kyoungah Cho , Sangsig Kim
{"title":"Ternary half adder comprising reconfigurable triple-gated feedback field-effect transistors","authors":"Jaewook Lim , Juhee Jeon , Yunwoo Shin , Jeongyun Oh , Hyojoo Heo , Kyoungah Cho , Sangsig Kim","doi":"10.1016/j.cap.2025.12.020","DOIUrl":"10.1016/j.cap.2025.12.020","url":null,"abstract":"<div><div>Ternary half adders have emerged as representative building blocks for ternary arithmetic operations, which can efficiently process large amounts of data. In this paper, we present a ternary half adder by cascading reconfigurable logic-in-memory (R-LIM) cells that perform both CONS and ANY logic functions in the same cell configuration. Each R-LIM cell is composed of eight triple-gated feedback field-effect transistors (TG FBFETs) reconfigured in <em>n</em>- or <em>p</em>-channel modes. In a R-LIM cell, the CONS and ANY gates operate with low average power consumption of 0.03 and 3.85 nW, respectively, owing to TG FBFETs exhibiting low current levels (∼10<sup>−12</sup> A) at a control gate voltage of 0 V in both the <em>n</em>- and <em>p</em>-channel modes. Furthermore, the ternary half adder retained the logic output during the hold operation for 10 ms under zero-bias conditions. The ternary half adder proposed in this study demonstrates the potential of ternary logic elements in data-intensive applications.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"84 ","pages":"Pages 81-87"},"PeriodicalIF":3.1,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145922448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}