Current Applied Physics最新文献

Photolithographically fabricated FR4-Based miniaturized implantable antenna with geometric tuning for biomedical telemetry in the MICS band 光刻制备基于fr4的微型化几何调谐植入式天线，用于MICS波段的生物医学遥测

IF 3.1 4区物理与天体物理

Current Applied Physics Pub Date : 2025-10-18 DOI: 10.1016/j.cap.2025.10.007

Min-Wen Wang , Wen-Quan Yan , Chun-Chieh Tseng , Jui-Han Lu , Ching-Chien Huang

{"title":"Photolithographically fabricated FR4-Based miniaturized implantable antenna with geometric tuning for biomedical telemetry in the MICS band","authors":"Min-Wen Wang , Wen-Quan Yan , Chun-Chieh Tseng , Jui-Han Lu , Ching-Chien Huang","doi":"10.1016/j.cap.2025.10.007","DOIUrl":"10.1016/j.cap.2025.10.007","url":null,"abstract":"<div><div>This work reports the design, fabrication, and validation of a miniaturized circular monopole antenna for implantable biomedical telemetry in the MICS band. The antenna is built on a single-layer FR4 substrate and encapsulated with a PDMS biocompatible coating, enabling low-cost and scalable fabrication using standard photolithography. Key parameters such as conductor spacing, trace width, shorting element placement, and ground plane geometry were optimized to achieve compact size and stable impedance. Full-wave simulations predicted resonance at 406 MHz with a return loss of −34.23 dB, radiation efficiency of −29.59 dB, and gain of −27.91 dBi. Measurements in tissue-mimicking phantoms and porcine skin confirmed a return loss of −24.82 dB and gain of −27.94 dBi, closely matching simulations. Specific absorption rate analysis verified compliance with IEEE C95.1–1999 safety limits at 193 mW input. The proposed design integrates material choice, geometric refinement, and planar fabrication, providing a reproducible platform for next-generation implantable systems.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 367-375"},"PeriodicalIF":3.1,"publicationDate":"2025-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145358294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Two-level system loss characterization of NbTi superconducting resonators on Si/SiO2 substrates Si/SiO2衬底NbTi超导谐振器的双能级系统损耗特性

IF 3.1 4区物理与天体物理

Current Applied Physics Pub Date : 2025-10-18 DOI: 10.1016/j.cap.2025.10.010

Bongkeon Kim, Yong-Joo Doh

引用次数: 0

Landau-Devonshire theory-based phase diagram of the bismuth ferrite and barium titanate solid solution 铁酸铋和钛酸钡固溶体的Landau-Devonshire相图

IF 3.1 4区物理与天体物理

Current Applied Physics Pub Date : 2025-10-16 DOI: 10.1016/j.cap.2025.10.009

Hae In Choi , Myang Hwan Lee , Won-Jeong Kim , Tae Kwon Song

{"title":"Landau-Devonshire theory-based phase diagram of the bismuth ferrite and barium titanate solid solution","authors":"Hae In Choi , Myang Hwan Lee , Won-Jeong Kim , Tae Kwon Song","doi":"10.1016/j.cap.2025.10.009","DOIUrl":"10.1016/j.cap.2025.10.009","url":null,"abstract":"<div><div>The development of high-performance, lead-free piezoelectric ceramics is essential for modern sensor and actuator applications. Bismuth ferrite-based solid solutions, like (1-<em>x</em>)BiFeO<sub>3</sub>-<em>x</em>BaTiO<sub>3</sub> (BF-BT), are promising due to their high Curie temperature and high piezoelectric performance, but ambiguities persist regarding their phase transitions and the exact location of the morphotropic phase boundary (MPB), where piezoelectric properties are maximized. This study resolves these issues by applying Landau-Devonshire theory to construct a comprehensive phase diagram for the BF-BT system. By calculating the free energy density landscape, our theoretical model accurately reproduces the material's composition-dependent properties. The resulting phase diagram agrees well with experimental observations, predicting a coexistence of rhombohedral and tetragonal phases near <em>x</em> = 0.33. And our calculations identify the MPB at a composition of <em>x</em> = 0.375, consistent with the experimentally reported range. These findings highlight the link between phase structure and piezoelectric performance.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 362-366"},"PeriodicalIF":3.1,"publicationDate":"2025-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145358202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Proton doping of graphene FETs enabled by ionic modulation from polysilazane dielectrics 质子掺杂石墨烯fet的离子调制从聚硅氮烷电介质

IF 3.1 4区物理与天体物理

Current Applied Physics Pub Date : 2025-10-16 DOI: 10.1016/j.cap.2025.10.006

Kyungmin Park, Garam Bae

{"title":"Proton doping of graphene FETs enabled by ionic modulation from polysilazane dielectrics","authors":"Kyungmin Park, Garam Bae","doi":"10.1016/j.cap.2025.10.006","DOIUrl":"10.1016/j.cap.2025.10.006","url":null,"abstract":"<div><div>Graphene field-effect transistors offer great potential for next-generation electronics due to graphene's high carrier mobility and atomic-scale thickness. However, stable device operation requires precise control of the dielectric interface, which impacts carrier transport and doping. In this study, we use solution-processed polysilazane (PSZ)-derived dielectrics as both gate insulators and active ionic environments for modulating graphene's electronic properties. The PSZ films, processed under humid conditions, generate hydroxyl-rich surfaces that serve as proton reservoirs. Electrical characterization and in-situ Raman spectroscopy show that gate bias induces proton doping of graphene, manifesting as hysteresis, Dirac point shifts, and D-band enhancement arising from phonon activation and interfacial Coulombic perturbations. The device also exhibits characteristic doping and relaxation times, revealing proton migration dynamics. Our findings suggest that PSZ dielectrics provide both gate insulation and dynamic electrochemical modulation of the graphene channel, offering a new strategy for dielectric interface engineering in 2D electronic devices.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 346-353"},"PeriodicalIF":3.1,"publicationDate":"2025-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145358200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Localized and delocalized electron states in TiO2 revealed using resonant inelastic soft X-ray scattering 用共振非弹性软x射线散射揭示了TiO2的局域和离域电子态

IF 3.1 4区物理与天体物理

Current Applied Physics Pub Date : 2025-10-13 DOI: 10.1016/j.cap.2025.10.005

Layla Mravac , Yi-De Chuang , Ji Hyeon Choi , Ji Won Han , Tae Joo Park , Kyung Won Park , Jae Hyuck Jang , Cheng-Tai Kuo , Deok-Yong Cho

{"title":"Localized and delocalized electron states in TiO2 revealed using resonant inelastic soft X-ray scattering","authors":"Layla Mravac , Yi-De Chuang , Ji Hyeon Choi , Ji Won Han , Tae Joo Park , Kyung Won Park , Jae Hyuck Jang , Cheng-Tai Kuo , Deok-Yong Cho","doi":"10.1016/j.cap.2025.10.005","DOIUrl":"10.1016/j.cap.2025.10.005","url":null,"abstract":"<div><div>Excess carriers in defective TiO<sub>2</sub> play a key role in determining the functionality of numerous applications including photocatalysts, memristors, etc. The electronic structures of the excess electron states derived from inherent oxygen deficiencies in a TiO<sub>2</sub> crystal and a TiO<sub>2</sub> thin film are investigated by using resonant inelastic soft X-ray scattering. The results show that there exist two separable states associated with these excess electrons, that is, either local (bound) or delocalized (band-like) <em>d</em> electrons, and that their abundance differs significantly depending on the sample type. In the case of thin film, delocalized electron states (<em>d</em>-fluorescence) dominate over the localized defect states (<em>dd</em> excitation) showing a strong resonance effect at Ti<sup>3+</sup>’s excitation energy, whereas in the case of crystal, both localized and delocalized electron states weakly contribute to the defect states. Most plausibly, this discrepancy originates mainly from the distinct crystal structure of a rutile (crystal) and an anatase (thin film), implying that understanding the crystal structure dependence of intrinsic defects in TiO<sub>2</sub> polymorphs is crucial for engineering TiO<sub>2</sub>'s electronic transport properties.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 327-332"},"PeriodicalIF":3.1,"publicationDate":"2025-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145332807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A nanowatt oscillator powered only by 68 MeV proton irradiation of a crystalline silicon photodiode pair 晶体硅光电二极管对仅由68兆电子伏特质子辐照供电的纳瓦振荡器

IF 3.1 4区物理与天体物理

Current Applied Physics Pub Date : 2025-10-08 DOI: 10.1016/j.cap.2025.10.004

Heinz-Christoph Neitzert , Arpana Singh , Alina Hanna Dittwald , Georgios Kourkafas

引用次数: 0

Scalable assembly of algorithmic DNA lattices using combined 3-input logic rules 使用组合3输入逻辑规则的可伸缩的算法DNA格组装

IF 3.1 4区物理与天体物理

Current Applied Physics Pub Date : 2025-10-06 DOI: 10.1016/j.cap.2025.10.002

Thi Bich Ngoc Nguyen , Thi Hong Nhung Vu , Anshula Tandon, Sungjin Lee, Yeonju Nam, Sung Ha Park

{"title":"Scalable assembly of algorithmic DNA lattices using combined 3-input logic rules","authors":"Thi Bich Ngoc Nguyen , Thi Hong Nhung Vu , Anshula Tandon, Sungjin Lee, Yeonju Nam, Sung Ha Park","doi":"10.1016/j.cap.2025.10.002","DOIUrl":"10.1016/j.cap.2025.10.002","url":null,"abstract":"<div><div>DNA-based algorithmic self-assembly provides a versatile platform for parallel computation and nanoscale pattern generation. Logic gates constructed from DNA rule tiles enable programmable lattices capable of performing complex mathematical operations. Here, we present a combinatorial method for generating diverse algorithmic patterns using 3-input 1-output logic rules. By combining complementary rule sets (e.g., {R017, R238}) and non-complementary sets (e.g., {R019, R238}), we designed specific rule and operator tiles that reduce the number of unique tiles required while expanding the range of implementable logic functions. The resulting DNA lattices were experimentally validated using atomic force microscopy, and observed patterns closely matched theoretical predictions, demonstrating high fidelity and reliability. This approach improves scalability and efficiency compared with conventional single-rule assemblies and provides a practical route toward constructing complex computational architectures at the nanoscale, with potential applications in molecular computing, programmable nanomaterials, and DNA-based information processing.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 333-340"},"PeriodicalIF":3.1,"publicationDate":"2025-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145332808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Correlation between optical thermometry and Judd–Ofelt parameters in Er3+-doped perovskite oxides Er3+掺杂钙钛矿氧化物中光学测温与Judd-Ofelt参数的相关性

IF 3.1 4区物理与天体物理

Current Applied Physics Pub Date : 2025-10-02 DOI: 10.1016/j.cap.2025.09.025

C.Y. Lee, J.H. Han, Y.S. Lee

引用次数: 0

Experimental and computational insights into optimizing polymer solar cell operational parameters 优化聚合物太阳能电池操作参数的实验和计算见解

IF 3.1 4区物理与天体物理

Current Applied Physics Pub Date : 2025-10-02 DOI: 10.1016/j.cap.2025.10.003

Ibrar Ahmad , Syeeda Nida Alim , Khizar Hayat , Abdullah Shah , Sabir Shah , Said Karim Shah

{"title":"Experimental and computational insights into optimizing polymer solar cell operational parameters","authors":"Ibrar Ahmad , Syeeda Nida Alim , Khizar Hayat , Abdullah Shah , Sabir Shah , Said Karim Shah","doi":"10.1016/j.cap.2025.10.003","DOIUrl":"10.1016/j.cap.2025.10.003","url":null,"abstract":"<div><div>This study explores the impact of active layer (AL) thickness, annealing temperatures(ATs), and interfacial materials on the performance of polymer solar cells (PSCs) based on P3HT: PCBM. AL thickness was tuned by varying spin speeds (1000–5000 rpm), with devices D1K and D4K achieving PCEs of 2.37 % and 2.17 % after thermal annealing at 130 °C. Increasing the AT to 180 °C further enhanced device efficiency. The influence of interfacial layers LiF and Ca on PSC performance and thermal stability was also investigated. Ca/Al-based devices outperformed others at lower temperatures but degraded at higher temperatures, while LiF/Al-based devices showed reduced PCE beyond ∼110 °C. To complement experiments, simulations using drift-diffusion, exciton-diffusion, and transfer-matrix models(TMM) were performed. These provided insights into photon distribution, absorption, and carrier generation, supporting the experimental outcomes. The study offers a comprehensive understanding of the interplay between device architecture and thermal treatment in optimizing PSC performance.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 291-299"},"PeriodicalIF":3.1,"publicationDate":"2025-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145262496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bilayer graphene metasurface with dynamically reconfigurable terahertz perfect absorption 具有动态可重构太赫兹完美吸收的双层石墨烯超表面

IF 3.1 4区物理与天体物理

Current Applied Physics Pub Date : 2025-10-02 DOI: 10.1016/j.cap.2025.10.001

Zhiyong Chen , Mengsi Liu , Shubo Cheng , Junqiao Wang , Yougen Yi , Boxun Li , Chaojun Tang , Fan Gao

引用次数: 0