{"title":"Electron-beam-induced tunable reduction of graphene oxide on cellulose-based filter paper for flexible electromagnetic interference shielding","authors":"Jagdeep Singh , Santosh K. Tiwari , Soumik Bhowmik , Karan Singh Hada , A.S. Dhaliwal","doi":"10.1016/j.cap.2025.05.004","DOIUrl":"10.1016/j.cap.2025.05.004","url":null,"abstract":"<div><div>This study reports the electrochemical exfoliation synthesis of graphene oxide (GO) and the fabrication of free-standing GO films via vacuum filtration on cellulose filter paper (CFP). The films were subjected to electron beam irradiation at 10 keV for varying durations to achieve controlled reduction to reduced graphene oxide (rGO). Comprehensive characterization revealed significant changes in optical, thermal, chemical, morphological, mechanical, and dielectric properties, confirming successful reduction. The resulting rGO/CFP composite was used as electromagnetic interference (EMI) shielding in the 4–14 GHz range. Notably, the film was irradiated for 90 min, exhibiting a shielding effectiveness of 60.8 dB at 10 GHz with a thickness of 0.32 mm. This enhancement is attributed to improved conductivity, polarization relaxation, and dielectric losses caused by hopping carriers and lattice defects. E-beam irradiation presents a chemical-free, efficient method for producing flexible, high-performance rGO/CFP films for EMI shielding.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"75 ","pages":"Pages 50-62"},"PeriodicalIF":2.4,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143947282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Exploring structural, optical, and magnetic analysis of dilute Co incorporated CdS thick films for spintronics","authors":"Aeshah Alasmari , Salma Alshehri , Abdulaziz Almalki , Fahad Algarni , Hosam M. Gomaa , F.M. Aldosari , Atef Ismail","doi":"10.1016/j.cap.2025.04.009","DOIUrl":"10.1016/j.cap.2025.04.009","url":null,"abstract":"<div><div>This study involves the preparation using a solid-state reaction method of six thin films of Cd<sub>1-x</sub>Co<sub>x</sub>S by varying the concentrations of cobalt and cadmium, where x = 0.0, 0.02, 0.04, 0.06, 0.08, and 0.1 At. %. The process included mixing Co<sub>2</sub>S<sub>3</sub> and CdS powders in stoichiometric ratios, followed by mechanical ball milling, compacting into discs, and analyzing the films' properties. X-ray diffraction (XRD) confirmed the films' crystalline structure and energy-dispersive X-ray spectroscopy (EDX) verified the elemental composition, indicating the successful incorporation of Co into the CdS matrix. X-ray photoelectron spectroscopy (XPS) further detailed the chemical states within the films, showing that Co substitution influenced optical properties. The films' optical transmittance decreased with higher Co content, while reflectance and absorption increased, attributed to Co's impact on the electronic structure. The study also demonstrated a decrease in crystallite size and an increase in lattice strain with rising Co concentration, suggesting a reduction in crystallinity. Optical analyses revealed a decrease in the energy band gap and an increase in refractive index as Co content increased. The refractive index was modeled using the Cauchy equation, and the study noted a corresponding rise in static refractive index and dielectric constant, implying enhanced electromagnetic energy storage capability. Additionally, the magnetic properties showed room-temperature ferromagnetism (RT-FM) across all films, with significant values for saturation magnetization, coercivity, and retentivity.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"75 ","pages":"Pages 40-49"},"PeriodicalIF":2.4,"publicationDate":"2025-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143931571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Thickness dependence of surface Rashba spin-momentum coupling","authors":"Byeonghyeon Choi, Jeonghun Sohn, Hyun-Woo Lee","doi":"10.1016/j.cap.2025.04.006","DOIUrl":"10.1016/j.cap.2025.04.006","url":null,"abstract":"<div><div>Here we present findings indicating that Rashba spin-momentum coupling (RSMC), traditionally believed to be confined within the Fermi wavelength from the surface, displays a thickness dependence in metallic thin films. Specifically, we observed that in Au films thinner than a critical thickness of 4 nm, and in Pt films thinner than 5 nm, quantum interference occurs between the top and bottom surface states, strongly impacting the surface spin polarization. The spin polarization gradually increases with the film thickness until it reaches these critical thresholds, beyond which it saturates. Our findings serve as examples illustrating that the characteristic length of RSMC far exceeds the Fermi wavelength, while the characteristic length has been regarded as the Fermi wavelength in spin-orbit torque measurements.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"75 ","pages":"Pages 28-32"},"PeriodicalIF":2.4,"publicationDate":"2025-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143921605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"TRANSFERLESS soft-lithography for the fabrication of peristaltic micropump with dome-shape membrane","authors":"Ayub Subandi , Muhamad Ramdzan Buyong , Azrul Azlan Hamzah , Rhonira Latif , Burhanuddin Yeop Majlis , Roer Eka Pawinanto , Budi Mulyanti , Jumril Yunas","doi":"10.1016/j.cap.2025.04.008","DOIUrl":"10.1016/j.cap.2025.04.008","url":null,"abstract":"<div><div>This paper reports a new technique for fabricating a polydimethylsiloxane (PDMS)-based peristaltic electromagnetic (EM) micropump with a dome-shaped membrane structure. The membrane was intended to allow a high rate of fluid sample transport. A new and effective soft-lithography process without the transfer of mold structures is introduced, which is used for forming dome-shaped membranes, microfluidic channels, and pump chambers. This technique includes four main steps, membrane fabrication, pattern of the first and second PDMS mold, removal of the photoresist inside the channel and finally attachment of the EM coils. The coating properties and surface quality were analyzed using scanning electron microscopy (SEM). The results showed that the membrane and channels was formed properly without any leakage. The fabricated actuator was functionally tested to determine the performances of the micropump. Polymer-based microfluidic pump systems have potential applications in precisely injection of microfluidic samples in artificial kidney and smart insulin drug delivery system.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"75 ","pages":"Pages 15-20"},"PeriodicalIF":2.4,"publicationDate":"2025-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143908273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jin Park , Sang Ho Lee , In Man Kang , Young Jun Yoon
{"title":"Fabrication of AlGaN/GaN HEMT using TMAH pre-treatment and analysis of electrical characteristics by proton irradiation","authors":"Jin Park , Sang Ho Lee , In Man Kang , Young Jun Yoon","doi":"10.1016/j.cap.2025.04.010","DOIUrl":"10.1016/j.cap.2025.04.010","url":null,"abstract":"<div><div>In this study, we analyzed the effects of proton irradiation and surface pre-treatment on gallium nitride (GaN)-based high electron mobility transistors (HEMTs) and evaluated their reliability against proton irradiation. The variation in DC performance of the AlGaN/GaN HEMT was analyzed by irradiating a proton energy of 15 MeV at proton fluence of 5 × 10<sup>13</sup> cm<sup>−2</sup>. During the pre-treatment process, the active region and mesa isolation region (Sample 1) and mesa isolation region (Sample 2) were treated with trimethylammonium (TMAH) solution, respectively. And the variation in transfer characteristics of before and after proton irradiation were compared. In terms of transfer characteristics of before and after proton irradiation, the drain current decreased after proton irradiation due to increase the sheet resistance and contact resistance. Also, acceptor-like and donor-like vacancies were generated on the AlGaN/GaN surface due to proton irradiation, inducing the displacement damage effect. In particular, the variation in on current (I<sub>on</sub>) increased by 7.26 percentage point (%p) when TMAH treatment in the Sample 2 compared to when TMAH treatment in the Sample 1 after proton irradiation. The damage caused by dry etching and plasma-enhanced chemical vapor deposition (PECVD) plasma enhanced the proton irradiation effect because the AlGaN/GaN surface was not completely treated by the TMAH solution due to SiN deposition. These results demonstrate that the radiation hardness of GaN-based HEMTs is affected by the AlGaN/GaN surface quality and pre-treatment using TMAH solution is necessary to increase the resistance to proton irradiation.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"75 ","pages":"Pages 33-39"},"PeriodicalIF":2.4,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143928136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shishir Shukla , Pankaj Kumar Tripathi , Ayushi Rastogi , E. Shakerzadeh , V. Singh , V.K. Mishra , T. Yadav , M. Tiwari , A.K. Misra
{"title":"Exploring the photoluminescence behavior of antiferroelectric liquid crystals through graphene oxide dispersion","authors":"Shishir Shukla , Pankaj Kumar Tripathi , Ayushi Rastogi , E. Shakerzadeh , V. Singh , V.K. Mishra , T. Yadav , M. Tiwari , A.K. Misra","doi":"10.1016/j.cap.2025.05.001","DOIUrl":"10.1016/j.cap.2025.05.001","url":null,"abstract":"<div><div>The photoluminescence properties of antiferroelectric liquid crystal (AFLC) dispersed with graphene oxide (GO) were studied. AFLC-based composites were prepared by dispersing various weight concentrations (0.1 % and 0.3 % wt./wt.) of GO into AFLC. UV absorbance studies were performed using spectrum, time scan, and overlay modes. The decrease in UV absorbance was observed in all of these modes. Red shifts in absorbance bands were observed for both pure AFLC sample and GO/AFLC composite. The UV absorbance maxima for AFLC dispersed with GO shifted from 317.27 nm to 324.57 nm. This shift was attributed to the varying concentrations of GO in the AFLC medium. A significant improvement in the luminescence intensity of AFLC dispersed with GO nanoparticles mixtures was observed. The luminescence intensity increased from 0.3 (pure AFLC) to 1.0 (0.3 % wt./wt.). Furthermore, the luminescence intensity of the AFLC mixture was observed to increase with the concentration of GO for the fixed weight of the AFLC sample.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"75 ","pages":"Pages 21-27"},"PeriodicalIF":2.4,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143921604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Dae Hyun Choi , Duksun Han , Sungyoung Shim , Se Youn Moon
{"title":"Methane steam reforming for eco-friendly H2 production using atmospheric-pressure microwave steam plasma","authors":"Dae Hyun Choi , Duksun Han , Sungyoung Shim , Se Youn Moon","doi":"10.1016/j.cap.2025.04.005","DOIUrl":"10.1016/j.cap.2025.04.005","url":null,"abstract":"<div><div>Hydrogen (H<sub>2</sub>) is gaining attention as a clean fuel and a key future energy resource for the future, with expanding applications in power generation, clean transportation, and chemical synthesis. To meet the growing demand for hydrogen, recently, various production methods have been developed. In this work, steam plasma reforming and its combination with catalytic reforming were developed and considered to address limitations of conventional techniques, such as high energy consumption and significant CO<sub>2</sub> emissions. Under various conditions, steam plasma reforming demonstrated rapid reaction kinetics and low CO<sub>2</sub> emissions, whereas catalytic reforming resulted in higher CO<sub>2</sub> emissions. In addition, the combination of steam plasma and catalytic reforming enhanced CH<sub>4</sub> conversion and H<sub>2</sub> yield but resulted in increased CO<sub>2</sub> emissions. Notably, the performance of CH<sub>4</sub> reforming in steam plasma was primarily influenced by steam-to-carbon (S/C) ratio. Optimal performance, balancing CH<sub>4</sub> conversion, H<sub>2</sub> yield, and minimal CO<sub>2</sub> production, was achieved at an S/C ratio of 4.7 with 6 kW of power. These results highlight steam plasma reforming as a promising approach for clean H<sub>2</sub> production, particularly for applications requiring reduced CO<sub>2</sub> emissions, such as turquoise hydrogen and syngas generation.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"75 ","pages":"Pages 8-14"},"PeriodicalIF":2.4,"publicationDate":"2025-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143895664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chayuan Zeng , liwen Fan , Sen Zhang , Jiasheng Wang , Tianqi Cheng , Wanqian Wang , Fei Xie , Wei Luo , Gang Peng
{"title":"A facile planar memristor based on CsBi4Te6 with asymmetric metal contacts","authors":"Chayuan Zeng , liwen Fan , Sen Zhang , Jiasheng Wang , Tianqi Cheng , Wanqian Wang , Fei Xie , Wei Luo , Gang Peng","doi":"10.1016/j.cap.2025.04.003","DOIUrl":"10.1016/j.cap.2025.04.003","url":null,"abstract":"<div><div>A facile planar memristor was fabricated by choosing CsBi<sub>4</sub>Te<sub>6</sub> (CBT) contacted with handmade asymmetric electrodes for the first time. Utilizing simple methods such as dispensing silver (Ag) paste and pressing indium (In) significantly streamline the electrode fabrication process. The planar memristor displays stable bipolar resistive switching (RS) capabilities over 100 cycles. the resistance ratio (<em>R</em><sub>OFF</sub>/<em>R</em><sub>ON</sub>) surpasses 10<sup>3</sup>, and its retention time at ambient temperature exceeds 10<sup>4</sup> s. Comparative experiments reveal that the memristor behavior stems from the interface between CBT and Ag, with the possibility of a thin functional layer forming at the contact interface. Furthermore, characterizations at lower temperatures confirm the occurrence of carrier tunneling at the interface, which offers a fresh perspective and insight into the memristor.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"74 ","pages":"Pages 61-66"},"PeriodicalIF":2.4,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143851764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Progress of terahertz nonlinearities on graphene plasmonic structures","authors":"Jeong Woo Han","doi":"10.1016/j.cap.2025.03.012","DOIUrl":"10.1016/j.cap.2025.03.012","url":null,"abstract":"<div><div>As graphene is patterned into micron-sized periodic structures, i.e., plasmonic structures, the carriers in graphene can be induced by the collective oscillation in response to incident terahertz (THz) light, known as localized plasmon. Utilizing this phenomenon, light-matter interactions can be significantly enhanced at the plasmon frequency and therefore the strongest light-matter frequency can be tailored in the THz frequency range by manipulating ω<sub>p</sub>. Consequently, various types of THz nonlinearities have been reported on graphene plasmonic structures. In this review, we discuss the progress of research on the THz nonlinearities emerging in graphene plasmonic structures. Firstly, we introduce THz nonlinearities reported in the graphene sheet. In the later part, we discuss the recently reported two types of THz nonlinearities, i.e., thermal and plasmonic nonlinearities, emerging on the graphene plasmonic structure and its application.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"74 ","pages":"Pages 44-53"},"PeriodicalIF":2.4,"publicationDate":"2025-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143823694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jaljalalul Abedin Jony , Hasnain Yousuf , Muhammad Quddamah Khokhar , Muhammad Aleem Zahid , Polgampola Chamani Madara , Rafi Ur Rahman , Alamgeer , Mengmeng Chu , Simpy Sanyal , Fucheng Wang , Youngkuk Kim , Kyesoo Kim , Suresh Kumar Dhungel , Sangheon Park , Junsin Yi
{"title":"Nafion edge passivation and nitrogen annealing treatment to improve solar cell reliability under light and elevated temperature induced degradation (LeTID) investigation","authors":"Jaljalalul Abedin Jony , Hasnain Yousuf , Muhammad Quddamah Khokhar , Muhammad Aleem Zahid , Polgampola Chamani Madara , Rafi Ur Rahman , Alamgeer , Mengmeng Chu , Simpy Sanyal , Fucheng Wang , Youngkuk Kim , Kyesoo Kim , Suresh Kumar Dhungel , Sangheon Park , Junsin Yi","doi":"10.1016/j.cap.2025.04.002","DOIUrl":"10.1016/j.cap.2025.04.002","url":null,"abstract":"<div><div>This research examines the effectiveness of nitrogen annealing and Nafion treatment in mitigating Light and Elevated Temperature Induced Degradation (LeTID) in Passivated Emitter and Rear Contact (PERC) solar cells, employing a 30-kW photovoltaic (PV) system for evaluation. As a photosensitive device, solar cells are susceptible to damage from laser irradiation, leading to reduced photoelectric conversion efficiency, structural damage, and functional loss. To minimize this loss, nitrogen annealing and Nafion treatments were applied, followed by the analysis of LeTID effects on untreated, Nafion-treated, and combined nitrogen-annealed and Nafion-treated PERC cells. Untreated cells showed an 8 % fall in open-circuit voltage (V<sub>oc</sub>) and a 7 % fill factor (FF) loss. The combined treatment (Combination of Nitrogen & Nafion Treatment) improved stability, reducing losses to 6 % in V<sub>oc</sub> and 5 % in FF. The Nafion treatment yielded the best results, limiting deterioration to 4 % in V<sub>oc</sub> and 3 % in FF. PVsyst simulations, incorporating real-world data, confirmed enhanced stability and efficiency, aiding in optimizing PV system design and maintenance.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"75 ","pages":"Pages 1-7"},"PeriodicalIF":2.4,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143873331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}