Mubashair Imran , Majid Khan , A. Qayyum , K. Ahmad , S. Ahmad , M. Kamran
{"title":"Simulations of parallel electrode glow discharge and comparison with experimental results","authors":"Mubashair Imran , Majid Khan , A. Qayyum , K. Ahmad , S. Ahmad , M. Kamran","doi":"10.1016/j.cap.2025.09.012","DOIUrl":"10.1016/j.cap.2025.09.012","url":null,"abstract":"<div><div>This paper uses COMSOL Multiphysics simulations and experiments to provide insight into the plasma features of a parallel electrode DC glow discharge system. Nitrogen gas has been selected for plasma discharge due to its widespread use in plasma nitriding, which enhances the tribological properties of materials. The study looks at how DC power changes the important plasma parameters, like the electron temperature and the electron number density, while keeping the gas pressure the same. Additionally, the effect of varying gas-filled pressure was analyzed with fixed DC power. Experimental validation is carried out in a cylindrical shaped vacuum chamber with the same geometric configuration and input conditions. The comparison between simulated results and experimental outcomes shows a similar trend, although the magnitudes of simulated results are a little bit higher. This variation may be due to differences between theoretical modeling and actual plasma behavior. Based on these observations, the discharge system has been optimized for precise pressure and power conditions to improve its effectiveness in plasma nitriding applications. The findings contribute to better control and efficiency in plasma-based surface treatment processes.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 134-144"},"PeriodicalIF":3.1,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145105110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
L. Marini , P. Chithra Lekha , Roop L. Mahajan , T. Devasena
{"title":"Flexible screen-printed graphene oxide-based biosensor for sweat sodium detection","authors":"L. Marini , P. Chithra Lekha , Roop L. Mahajan , T. Devasena","doi":"10.1016/j.cap.2025.09.010","DOIUrl":"10.1016/j.cap.2025.09.010","url":null,"abstract":"<div><div>Sweat contains valuable biomarkers indicative of physiological health conditions such as electrolyte imbalance, stress, and disease, enabling continuous, non-invasive monitoring through miniaturized wearable electrochemical biosensors. Here, a flexible, cost-effective electrochemical sweat Na<sup>+</sup> ion sensor is fabricated using a screen-printing method on a flexible polyethylene terephthalate (PET) substrate. The sensor incorporates a low-cost Ion-Selective Layer (ISL) and graphene oxide (GO) enhancing sensitivity and electrochemical performance across a broad range of Na<sup>+</sup> ions. The sensor exhibits a high sensitivity of 1.213 mA/mM.cm<sup>2</sup>, low limit detection of 14.49 mM, and good stability. Real-time sweat analysis demonstrated Na<sup>+</sup> ion levels of 19 mM in the morning and 23 mM in the evening aligning with the analytical range of Na<sup>+</sup> ion concentration in sweat. This work addresses challenges in precision and individual variability in Na<sup>+</sup> ion concentration highlighting the potential of scalable, affordable sensors in wearables technology for personalized health monitoring.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 145-150"},"PeriodicalIF":3.1,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145105179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Islam Gomaa , Raiedhah A. Alsaiari , Mohamed Morsy , Moustafa A. Rizk
{"title":"Autonomous sampling of α-Fe2O3 hollow microspheres with carbon-stabilized defects: calcination-tuned humidity sensor performance","authors":"Islam Gomaa , Raiedhah A. Alsaiari , Mohamed Morsy , Moustafa A. Rizk","doi":"10.1016/j.cap.2025.09.011","DOIUrl":"10.1016/j.cap.2025.09.011","url":null,"abstract":"<div><div>Defect control and surface chemistry remain critical bottlenecks in advancing metal-oxide humidity sensors. We report a scalable mechano-thermal strategy for fabricating carbon-doped α-Fe<sub>2</sub>O<sub>3</sub> hollow microspheres, whose intrinsic voids act as autonomous sampling chambers. Systematic calcination (500–900 °C) enables precise tuning of crystallite size (38.2–87.6 nm), lattice strain (0.10–0.77 %), dislocation density (1.4 × 10<sup>−4</sup>–3.07 × 10<sup>−3</sup> nm<sup>−2</sup>), and carbon content (21 → 14 wt%), thereby modulating carbon–oxygen moieties that govern water adsorption and proton-hopping conduction. Spectroscopic analyses reveal a stable Fe<sup>2+</sup>/Fe<sup>3+</sup> surface ratio and C–Fe–O interactions, generating hydrophilic adsorption sites and activating a dual-regime mechanism: ionic conduction dominates up to 75 % RH, while Grotthuss proton transport prevails at higher humidity. Non-monotonic phase evolution with transient Fe<sub>3</sub>O<sub>4</sub> nucleation at 800 °C highlights the role of dynamic defect activation. The Fe-500 device delivers superior performance, with a sensitivity of 0.75 kΩ/% RH, response time of 40 s, and recovery time of 85 s, surpassing benchmark hematite-based sensors.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 158-168"},"PeriodicalIF":3.1,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145105112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Fabrication and characterisation of high response Cu/ (PVA-CdWO4) / p-Si Schottky diode for Ultraviolet photo detection","authors":"K.U. Aiswarya , K.J. Arun , M.D. Aggarwal","doi":"10.1016/j.cap.2025.09.008","DOIUrl":"10.1016/j.cap.2025.09.008","url":null,"abstract":"<div><div>In the present work, Metal Polymer Semiconductor (M-P-S) structured Schottky Barrier Diode (SBD) with copper metal, (PVA- CdWO<sub>4</sub>) polymer nanocomposite interfacial insulating layer and p-Si as semiconductor forming (Cu/(PVA- CdWO<sub>4</sub>)/p-Si) structure is fabricated and analysed for its photo detection properties. Studies has been done to investigate how the CdWO<sub>4</sub> content influences the morphological, structural, optical and electrical properties of the PVA- CdWO<sub>4</sub> composite films. Diode under illumination shows higher current values compared to dark indicating a high photo-responsive nature of the fabricated diodes. As the power of the illuminating source increases, the ideality factor decreases and barrier height increases. The photodiode parameters like Photo sensitivity, Responsivity, Quantum efficiency and Detectivity also enhances with CdWO<sub>4</sub> concentration and the MPS diode fabricated with 10 wt% of nanoparticles shows better results when illuminated by highest power light source where a responsivity of 101.24 mA/W and detectivity of 16.20 × 10<sup>10</sup> is observed.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 108-121"},"PeriodicalIF":3.1,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145059885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zhen Yang , Bingxu Liu , Zhuangzhi Li , Xi Han , Zilin Ye , Cici Jin
{"title":"Electrical transport and thermopower of reduced Ruddlesden-Popper phase Srn+1TinO3n+1-δ (n = 1, 2, 3, ∞) thin films","authors":"Zhen Yang , Bingxu Liu , Zhuangzhi Li , Xi Han , Zilin Ye , Cici Jin","doi":"10.1016/j.cap.2025.09.009","DOIUrl":"10.1016/j.cap.2025.09.009","url":null,"abstract":"<div><div>High quality Ruddlesden-Popper phase Sr<sub><em>n</em>+1</sub>Ti<sub><em>n</em></sub>O<sub>3<em>n</em>+1</sub> (<em>n</em> = 1, 2, 3, ∞) thin films were epitaxially grown on LaAlO<sub>3</sub> (001) single crystal substrates using pulsed laser deposition and then reduced in a gas mixture of H<sub>2</sub> and Ar at 1473 K. Their conductivities and Seebeck coefficients were investigated by focusing on various transport mechanisms. At low temperatures, the conductivity results show that electron-electron interactions dominate electrical transport. At room temperature, both conductivity and Seebeck coefficient results indicate that conduction follows the small polaron model. At 300 K, the power factors for SrTiO<sub>3-<em>δ</em></sub>, Sr<sub>4</sub>Ti<sub>3</sub>O<sub>10-<em>δ</em></sub> and Sr<sub>3</sub>Ti<sub>2</sub>O<sub>7-<em>δ</em></sub> reduced thin films reach 0.016, 0.017, and 0.006 mW/m⋅K<sup>2</sup>, respectively.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 128-133"},"PeriodicalIF":3.1,"publicationDate":"2025-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145105113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Optical and structural properties of indium oxide prepared by spray pyrolysis as a NO2 and H2S gas sensor","authors":"Haidar K. Dhayef , Nisreen Ahmed Hamzah","doi":"10.1016/j.cap.2025.09.006","DOIUrl":"10.1016/j.cap.2025.09.006","url":null,"abstract":"<div><div>Spray pyrolysis was employed to synthesize indium oxide nanostructures. The material was characterized using energy-dispersive X-ray spectroscopy (EDX), field emission scanning electron microscopy (FESEM), and X-ray diffraction (XRD). Thin films of indium oxide (In<sub>2</sub>O<sub>3</sub>) were produced by spray pyrolysis for gas sensing applications. The films were analyzed by XRD, FESEM, EDX, and UV–Vis spectroscopy. XRD analysis revealed a cubic polycrystalline structure with crystallite sizes ranging from 12 to 17 nm, while FESEM showed grass-like nanostructures with diameters between 40 and 70 nm. UV–Vis spectroscopy indicated an optical band gap of ∼3.27 eV. The gas sensor exhibited very high sensitivity to NO<sub>2</sub> and H<sub>2</sub>S gases, with maximum sensitivities of 69.9 % and 32.25 %, respectively, at 300 °C. The device also demonstrated rapid response and recovery times, making it an ideal candidate for environmental gas detection.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 122-127"},"PeriodicalIF":3.1,"publicationDate":"2025-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145060032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Min Jung Choi , Jung Min Yun , Yu Bin Kim , Seunghwan Kim , Soohyung Park , Seong Jun Kang
{"title":"Enhanced charge balance in QLEDs using oxygen vacancy induced defect states in Nb2O5 interfacial layer","authors":"Min Jung Choi , Jung Min Yun , Yu Bin Kim , Seunghwan Kim , Soohyung Park , Seong Jun Kang","doi":"10.1016/j.cap.2025.09.004","DOIUrl":"10.1016/j.cap.2025.09.004","url":null,"abstract":"<div><div>To enhance the performance of quantum-dot light emitting diodes (QLEDs), we used an Nb<sub>2</sub>O<sub>5</sub> interfacial layer as a buffer layer. The Nb<sub>2</sub>O<sub>5</sub> layer is used as an n-type semiconductor with electron transport properties. In this study, a significant number of defect states resulting from the oxygen vacancies in the Nb<sub>2</sub>O<sub>5</sub> layer were used to create gap states, bringing the valence band maximum (VBM) energy level closer to the Fermi level. This resulted in a lower injection barrier, facilitating efficient hole transport. However, charge imbalance occurs due to electron accumulation in the emission layer, resulting from the mobility difference between electrons and holes. This issue can be resolved by using the Nb<sub>2</sub>O<sub>5</sub> interfacial layer, leading to a current efficiency of 10.1 cd/A, the luminance of 106,194 cd/m<sup>2</sup>, and the EQE of 2.4 %. This represents almost a two-fold performance improvement compared to QLEDs device without the Nb<sub>2</sub>O<sub>5</sub> interfacial layer. These results demonstrate that the ITO/Nb<sub>2</sub>O<sub>5</sub>/V<sub>2</sub>O<sub>5</sub>/TFB/QDs/ZnO/Al structure of the device can enhance the performance of QLEDs by facilitating efficient hole transport through oxygen vacancies.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 64-71"},"PeriodicalIF":3.1,"publicationDate":"2025-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145043927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Jellaj , S. Ouhaibi , L. Zahiri , N. Belouaggadia
{"title":"Phase change materials and building envelope: An innovative solution for energy transition","authors":"S. Jellaj , S. Ouhaibi , L. Zahiri , N. Belouaggadia","doi":"10.1016/j.cap.2025.09.003","DOIUrl":"10.1016/j.cap.2025.09.003","url":null,"abstract":"<div><div>The energy efficiency of buildings is a critical challenge in regions with harsh climates, where heating and cooling demands are steadily increasing. Among the most promising passive strategies, the integration of phase-change materials (PCMs) into building envelopes enables latent heat storage and release, thereby stabilizing indoor temperatures and reducing overall energy consumption. This study employs transient CFD simulations to propose and assess an innovative wall system incorporating two PCM layers arranged in parallel, specifically tailored to the semi-arid climate of Marrakesh. The novelty of this work lies in the simultaneous parametric analysis of three key design factors: PCM type, thickness, and spatial positioning within the wall. Results indicate that the PCM1 (29 °C) + PCM4 (16 °C) configuration delivers the best performance, reducing indoor temperature fluctuations by over 40 % and lowering annual energy demand by up to 24 % compared to a reference wall without PCMs. Temperature contour analyses revealed a more uniform thermal distribution, while viscosity field visualizations provided valuable insights into the progression of melting and solidification cycles. These findings underscore the strategic role of PCMs as an effective passive solution for enhancing energy efficiency and thermal comfort in hot, arid climates. The study establishes a reproducible and climate-responsive framework tailored to North African conditions, paving the way for the broader adoption of PCMs in sustainable building design.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 82-98"},"PeriodicalIF":3.1,"publicationDate":"2025-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145043929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Performance evaluation of flux reversal machines with rare-earth and non-rare earth excitations for micro wind energy","authors":"Manne Bharathi , Obbu Chandra Sekhar , Suresh Lakhimsetty","doi":"10.1016/j.cap.2025.09.002","DOIUrl":"10.1016/j.cap.2025.09.002","url":null,"abstract":"<div><div>Cogging torque in flux-reversal machines (FRM) is relatively high compared with other types of stator active PM machines, due to their unique double salient topology. This research develops a hybrid novel skew with rotor pole pairing (SKCpp) method and analyses it using 2D finite element analysis (FEA), comparing its performance with two distinct excitation topologies, i.e., rare earth (RE-FRM) and ferrite (NRE) flux reversal machines (FRMs). The 3-phase, 6/8 pole FRM is modeled, and electromagnetic performances are compared with RE excited FRM (Machine A) and NRE excited FRM (Machine B), which have similar performance requirements for wind generator applications. These various excited machines are evaluated based on their power generation performance, demonstrating exceptional overload and speed capabilities through 2D FEA. The efficiency of Machine A is somewhat higher than that of Machine B, but cogging torque and torque ripples are at least 40 % higher than those of the former. It is found that the torque density of Machine B is only 54 % of that of Machine A, but by employing this structure, the cost saving is achieved by 47 %, since the machine is 1.8 times heavier. Further, the demagnetization risk analysis is performed up to 150 °C. At higher temperatures, Machine A is prone to deeper demagnetization risk, due to temperature susceptibility, which degrades the power factor and thereby limits the performance of the generator. Unlike Machine A and Machine B, which possess the minimum demagnetization risk, the occurrence is recorded below room temperature. Overall summary, it is found that the NRE excited proposed Machine B is the best alternative to the RE excited proposed Machine A for medium speed wind turbine generator applications.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 51-63"},"PeriodicalIF":3.1,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145019359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Precise analysis of electrical properties in MoS2 devices via H-TFSI ion reactions","authors":"Hyunjin Ji","doi":"10.1016/j.cap.2025.08.004","DOIUrl":"10.1016/j.cap.2025.08.004","url":null,"abstract":"<div><div>The effectiveness of bistriflimide (H-TFSI) treatment and its reaction mechanisms for improving device performance in MoS<sub>2</sub> devices are investigated. The H-TFSI solution contains both H cations and TFSI anions, which interact with MoS<sub>2</sub> device. In monolayer MoS<sub>2</sub> FETs, H-TFSI reaction residues are adsorbed on the channel surface as p-doping agents and scattering centers, leading to performance degradation. In multilayer MoS<sub>2</sub> FETs, the centroid of the channel charge is located near the gate oxide, allowing the impact of H<sup>+</sup> ion reactions on device performance to be examined without the influence of surface-adsorbed H-TFSI residues. Electrical hysteresis analysis and low-frequency noise modeling were performed on two types of multilayer MoS<sub>2</sub> devices with the same structure, which exhibited contrasting outcomes―performance enhancement and degradation―following H-TFSI treatment. Additionally, comprehensive analysis, including the electrical property changes after H<sup>+</sup> insertion promotion and acetone rinsing, provides insights into the correlation between device performance variations and the underlying mechanisms.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 99-107"},"PeriodicalIF":3.1,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145043930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}