Current Applied Physics最新文献

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Realization of diode structures on paper: An example of papertronics 在纸上实现二极管结构:纸上电子学的一个实例
IF 2.4 4区 物理与天体物理
Current Applied Physics Pub Date : 2024-10-05 DOI: 10.1016/j.cap.2024.10.001
{"title":"Realization of diode structures on paper: An example of papertronics","authors":"","doi":"10.1016/j.cap.2024.10.001","DOIUrl":"10.1016/j.cap.2024.10.001","url":null,"abstract":"<div><div>A possibility of fabricating paper/Ag/CdTe/Au Schottky and paper/Ag/CdTe/CdS/In p-n junction diode structures has been demonstrated here. Ag (∼5 μm), CdTe (∼50 μm), CdS (∼45 μm), Au and In dots (∼5 μm) were deposited on the cellulose using appropriate stainless-steel masks to obtain the requisite diode structures. The band gaps of the CdTe and CdS layers were ∼1.55 eV and ∼1.45 eV, respectively. Current-voltage (I-V) characteristics of the paper/Ag/CdTe/Au Schottky and paper/Ag/CdTe/CdS/In p-n junction diodes were recorded at room temperature. Ideality factor (<em>n</em>), series resistance (<em>R</em><sub><em>S</em></sub>) and barrier height (φ<sub>b</sub>) of the respective diodes were computed. The barrier height (φ<sub>b</sub>) and ideality factor (<em>n</em>) computed from current-voltage characteristics were found to be 0.74 eV and 1.8, respectively at room temperature. Series resistance and φ<sub>b</sub> computed by using Cheung-Cheung method were ∼177 Ω and ∼0.45 eV, respectively. They are comparable to the resistance derived from a modified Norde method. The fabricated diodes were reproducible and stable for a few months. These diode structures were tested in an open environment at room temperature and showed no noticeable ageing effect.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142427494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Accurate and efficient electronic structure calculations of semiconductor heterostructures using GGA-1/2 formalism 利用 GGA-1/2 形式对半导体异质结构进行精确高效的电子结构计算
IF 2.4 4区 物理与天体物理
Current Applied Physics Pub Date : 2024-10-05 DOI: 10.1016/j.cap.2024.10.003
{"title":"Accurate and efficient electronic structure calculations of semiconductor heterostructures using GGA-1/2 formalism","authors":"","doi":"10.1016/j.cap.2024.10.003","DOIUrl":"10.1016/j.cap.2024.10.003","url":null,"abstract":"<div><div>We have demonstrated that the electronic structures of interfaces between semiconductors, dislocations in solids, and real-size quantum dots—which are challenging to simulate due to the large number of atoms involved—can be calculated in a cost-effective and accurate manner through the implementation of the GGA-1/2 formalism with a pseudo-atomic orbital (PAO) basis. The band offsets, particularly those of the valence bands, of four interfaces (InAs/AlSb, ZnSe/ZnS, GaN/SiO<sub>2</sub>, and anatase/rutile) and the light absorption spectrum of a ZnSe/ZnS core/shell quantum dot with a diameter of 4.9 nm and the redshift due to the shell were accurately reproduced. The combination of the PAO basis and half-occupation method represents a highly realistic approach to studying the electronic structure of semiconductor heterostructures, as it allows for the relaxation of constraints in the size of the structural model while accurately predicting band edge positions.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142427492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
First-principles study on lanthanide dopants in BaTiO3 关于 BaTiO3 中镧系元素掺杂物的第一性原理研究
IF 2.4 4区 物理与天体物理
Current Applied Physics Pub Date : 2024-10-05 DOI: 10.1016/j.cap.2024.10.002
{"title":"First-principles study on lanthanide dopants in BaTiO3","authors":"","doi":"10.1016/j.cap.2024.10.002","DOIUrl":"10.1016/j.cap.2024.10.002","url":null,"abstract":"<div><div>Using first-principles calculation based on density-functional theory and density-functional perturbation theory, the microscopic structure and dielectric properties of Lanthanide (Ln) doped BaTiO<sub>3</sub> are investigated. The doped Ln atoms exhibit significant displacement from Ba sites for charge compensation, forming off-centered configurations. This displacement is more pronounced for elements with smaller ionic radii. The change in ionic dielectric constant is strongly correlated with Ln displacement and Ln ion radius. As Ln displacement (ionic radius) increases (decreases), Ln-doped BaTiO<sub>3</sub> has a higher ionic dielectric constant. However, regardless of the Ln species, the added Ln reduces the ionic dielectric constant compared to pristine BaTiO<sub>3</sub>.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142432076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Magnetocaloric effect of LiErP4O12 single crystal exhibiting competing ferromagnetic and anti-ferromagnetic interactions 表现出竞争性铁磁和反铁磁相互作用的 LiErP4O12 单晶的磁ocaloric 效应
IF 2.4 4区 物理与天体物理
Current Applied Physics Pub Date : 2024-10-04 DOI: 10.1016/j.cap.2024.10.004
{"title":"Magnetocaloric effect of LiErP4O12 single crystal exhibiting competing ferromagnetic and anti-ferromagnetic interactions","authors":"","doi":"10.1016/j.cap.2024.10.004","DOIUrl":"10.1016/j.cap.2024.10.004","url":null,"abstract":"<div><div>In this paper, we discuss the magnetic behavior and magnetocaloric effect of lithium erbium tetraphosphate (LiErP<sub>4</sub>O<sub>12</sub>) single crystal in the temperature range 2–85 K under magnetic fields up to 50 kOe. Detailed investigation of the temperature-dependent magnetization <em>M</em>(<em>T</em>) proves an existence of magnetic ordering below <em>T</em><sub><em>m</em></sub>, which has been estimated as a minimum in the <em>dM</em>/<em>dT vs</em>. <em>T</em> dependence. Above <em>T</em><sub><em>m</em></sub>, LiErP<sub>4</sub>O<sub>12</sub> possesses paramagnetic behavior and its magnetic susceptibility follows the Curie-Weiss law giving a higher value of the effective magnetic moment of Er<sup>3+</sup> compared to the theoretical one. This could be due to the Kramers spin degeneracy and the Stark structure of multiplets. Under an applied field <em>H</em> = 50 kOe, the maximum value of the magnetic-entropy change at 2 K reaches about 15 J/kgK, corresponding to a relative-cooling-power value of ∼343 J/kg. Assessments of the magnetic ordering exponent <em>n</em> and <em>N</em>(<em>T</em>, <em>H</em>) data prove LiErP<sub>4</sub>O<sub>12</sub> exhibiting short-range magnetic order. Due to the absence of magnetic hysteresis and large magnetocaloric response, we believe that LiErP<sub>4</sub>O<sub>12</sub> could be a promising candidate for magnetic-cooling applications in liquefying hydrogen and <sup>3</sup>He isotope.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142427498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced Joule heat release at surface irregularities 表面不规则处焦耳热释放增强
IF 2.4 4区 物理与天体物理
Current Applied Physics Pub Date : 2024-10-02 DOI: 10.1016/j.cap.2024.09.013
{"title":"Enhanced Joule heat release at surface irregularities","authors":"","doi":"10.1016/j.cap.2024.09.013","DOIUrl":"10.1016/j.cap.2024.09.013","url":null,"abstract":"<div><div>The heat release that occurs in a cylindrical conductor carrying an alternating current is analyzed for the cases when the conductor has axisymmetric surface irregularities of one of three types: local bumps, local pits, and sequences of alternating bumps and pits (wavy irregularities). The magnetic field and current density distributions over the conductor cross section have been simulated. The simulation parameters were chosen to match the conditions of experiments on the generation of strong magnetic fields. However, due to the analysis of the initial heating stage, the problem is solved neglecting the temperature dependence of the resistivity of the material. A multiple increase in heat release power in the vicinity of a surface irregularity has been revealed for the three types of irregularities.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142427491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Piezoelectric flexible generator based on Mn-doped ZnO/PVDF composite films for energy harvesting application 基于掺锰 ZnO/PVDF 复合薄膜的压电柔性发电机的能量采集应用
IF 2.4 4区 物理与天体物理
Current Applied Physics Pub Date : 2024-09-27 DOI: 10.1016/j.cap.2024.09.012
{"title":"Piezoelectric flexible generator based on Mn-doped ZnO/PVDF composite films for energy harvesting application","authors":"","doi":"10.1016/j.cap.2024.09.012","DOIUrl":"10.1016/j.cap.2024.09.012","url":null,"abstract":"<div><div>A flexible piezoelectric energy harvesting device was manufactured using Mn-doped ZnO (MnZ)/poly (vinylidene fluoride) (PVDF) composite film of various proportions of MnZ particles (5 wt%, 10 wt%, 20 wt% and 30 wt%) within the PVDF matrix. The phase formation, crystallinity and morphological characteristics of the fabricated composite films were analysed with the help of Fourier transform infrared (FTIR), X-ray diffraction (XRD), and Scanning Electron Microscopy (SEM). The piezoelectric performance of the constructed piezoelectric generator (PEG) device was measured by applying force on its surface which produced a significantly high open-circuit voltage of 344V and power density of 4.53 mW/cm<sup>2</sup>. Besides, these lead-free composite devices demonstrated remarkable sensitivity for human body motion detection in punching, finger bending, and wrist bending. Furthermore, practical usage of the fabricated PEG device was shown by powering devices like wristwatches, digital thermometers and glowing 20 light-emitting diodes (LEDs) of different colours.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142358583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spatially-resolved spectroscopic investigation of the inhomogeneous magnetic field effects on a low-pressure capacitively-coupled nitrogen plasma 非均相磁场对低压电容耦合氮等离子体影响的空间分辨光谱研究
IF 2.4 4区 物理与天体物理
Current Applied Physics Pub Date : 2024-09-27 DOI: 10.1016/j.cap.2024.09.010
{"title":"Spatially-resolved spectroscopic investigation of the inhomogeneous magnetic field effects on a low-pressure capacitively-coupled nitrogen plasma","authors":"","doi":"10.1016/j.cap.2024.09.010","DOIUrl":"10.1016/j.cap.2024.09.010","url":null,"abstract":"<div><div>Although magnetized plasmas have been frequently used to enhance the process rate or improve the film quality via the control of ion flux as well as energy and plasma density in semiconductor processes, the inhomogeneous magnetic field—which leads to plasma non-uniformity—remains as a problem to be solved. To address this problem, it is essential to conduct a comprehensive assessment of the magnetic effect throughout the entire discharge. Therefore, in the present study, we investigated the magnetic field effects (B &lt; 100 G) on a capacitively-coupled nitrogen plasma based on spectroscopic analyses. The spatially-resolved emission spectra were measured along the radial direction at various vertical positions under the pressures of 10 mTorr and 250 mTorr both with and without magnetic field. By analyzing emission spectra such as N<sub>2</sub> FPS, N<sub>2</sub> SPS, N<sub>2</sub><sup>+</sup> FNS, and N I, we were able to obtain the radial distributions of reactive species density, vibrational temperature, and excitation temperature. In low-pressure plasma, with the application of a magnetic field, maximum increases in vibrational temperature and excitation temperature of 462 K and 491 K, respectively, were observed within the bulk region beneath the magnet. This magnetic effect resulted in a significant increase in reactive species density along the radial direction. It was also found that the local enhancement of ion density by magnetic field was strongly related to the increase in excitation temperature and the density of the N<sub>2</sub><sup>+</sup>(B) state. From this result, it is suggested that introducing an asymmetric magnetic field could modulate the spatial distributions of the physical and chemical properties of the plasma.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142427490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A comprehensive numerical study of bilayer SnSe/SnS absorber based solar cells 基于双层锡/锡吸收器的太阳能电池的综合数值研究
IF 2.4 4区 物理与天体物理
Current Applied Physics Pub Date : 2024-09-26 DOI: 10.1016/j.cap.2024.09.011
{"title":"A comprehensive numerical study of bilayer SnSe/SnS absorber based solar cells","authors":"","doi":"10.1016/j.cap.2024.09.011","DOIUrl":"10.1016/j.cap.2024.09.011","url":null,"abstract":"<div><div>Herein, we present the simulation (using the SCAPS-1D program), of a bilayer absorber solar cell. First, we numerically studied the bilayer model using our experimentally observed parameters and investigated the results. The results from the bilayer absorber (SnSe/SnS) numerical analysis were then compared with a single (SnS and SnSe) absorber modeling. The optimized device with a bilayer absorber exhibited the highest performance, with a photo conversion efficiency (PCE) of 22.35%. In comparison, the single SnS and SnSe absorbers achieved a PCE of 14.79% and 13.69%. Furthermore, we compared this numerical study with our previous study having the same configuration. Although there was a significant difference in performance between the simulated and experimental studies, the outcomes of the fabricated devices exhibited similar trends to the simulations. Finally, we attempted to determine the key parameters responsible for the reduced performance in the experimental study.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142358584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Exploring interfacial stability for Zr-doped sulfide solid electrolyte with first-principle calculation 通过第一原理计算探索掺锆硫化物固体电解质的界面稳定性
IF 2.4 4区 物理与天体物理
Current Applied Physics Pub Date : 2024-09-25 DOI: 10.1016/j.cap.2024.09.009
{"title":"Exploring interfacial stability for Zr-doped sulfide solid electrolyte with first-principle calculation","authors":"","doi":"10.1016/j.cap.2024.09.009","DOIUrl":"10.1016/j.cap.2024.09.009","url":null,"abstract":"<div><div>First-principles calculations are employed to investigate the interfacial properties on the Zr-doped sulfide solid electrolytes. Theoretical calculation results show that the PS<sub>4</sub> tetrahedral structure near the Li/Li<sub>3</sub>PS<sub>4</sub> interface is severely damaged, whereas the Zr-doped sulfide solid electrolyte interface structure has a slight deformation. The Li ions migration energy barrier on the Zr-doped sulfide solid electrolyte interface is relatively lower than that on the Li/Li<sub>3</sub>PS<sub>4</sub>. Moreover, the stress-strain analysis indicates that the Li/Li<sub>3</sub>PS<sub>4</sub> interface structure experiences a maximum strain of only 6 %, while the Zr-doped sulfide solid electrolyte interface structure experiences a maximum strain of 10 %. This may be attributed to the ability of Zr doping to prevent S<sup>2−</sup> diffusion into the lithium metal anode and stabilize the Li ion transport skeleton. Therefore, Zr doping can improve the interface structure stability. This study will provide a useful perspective for designing high performance of solid electrolytes for the application of all-solid-state batteries.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142327949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical characterization of lead-modified bismuth borovanadate glasses 铅改性硼钒酸铋玻璃的电学特性分析
IF 2.4 4区 物理与天体物理
Current Applied Physics Pub Date : 2024-09-24 DOI: 10.1016/j.cap.2024.09.008
{"title":"Electrical characterization of lead-modified bismuth borovanadate glasses","authors":"","doi":"10.1016/j.cap.2024.09.008","DOIUrl":"10.1016/j.cap.2024.09.008","url":null,"abstract":"<div><div>Specifically, the study looks into dielectric characteristics (<span><math><mrow><msup><mi>ε</mi><mo>′</mo></msup><mtext>and</mtext><mspace></mspace><msup><mi>ε</mi><mo>″</mo></msup></mrow></math></span>) and complex modulus formulation and AC conductivity of lead-modified bismuth borovanadate glasses (50-x) V<sub>2</sub>O<sub>5</sub>-40 B<sub>2</sub>O<sub>3</sub>-10 Bi<sub>2</sub>O<sub>3</sub>-xPbO, where x = 5,10, 15, 20 and 25 mol% with sample ID's VPb1, VPb2, VPb3, VPb4 &amp; VPb5 according to different compositions of lead and vanadate. When the PbO content rises, there is a decreasing tendency in both the alternating current conductivity and dielectric constants. In order to fit AC conductivity data, Almond West equation is used to extract parameters, including crossover frequency (<span><math><mrow><msub><mi>ω</mi><mi>H</mi></msub></mrow></math></span>), frequency exponent (s), and direct current conductivity (<span><math><mrow><msub><mi>σ</mi><mrow><mi>d</mi><mi>c</mi></mrow></msub><mo>)</mo></mrow></math></span>. Direct current conduction mechanism in all glass samples except VPb5 [Correlated Barriers Hopping (CBH) conduction at all frequencies] at lower frequencies might potentially be attributed to large-polaron quantum mechanical tunneling (LQMT). Similar to this, at high frequencies, small polaron quantum mechanical tunnelling is followed by VPb2 &amp; VPb3 while LQMT is followed by VPb1 &amp; VPb4. Activation energy of dc conduction (<span><math><mrow><msub><mi>E</mi><mtext>dc</mtext></msub></mrow></math></span>) at higher frequencies (0.373–0.476 eV) for samples having sample ID VPb1 to VPb4 and sample VPb5 at all frequencies with <span><math><mrow><msub><mi>E</mi><mtext>dc</mtext></msub></mrow></math></span> 0.686 eV and modulus activation energy <span><math><mrow><mo>(</mo><msub><mi>E</mi><mi>R</mi></msub><mo>)</mo></mrow></math></span> (0.382–0.534 eV) are found in good agreement. Dielectric studies reveal non-Debye-type behaviour.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142358582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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