Polarization-mediated electromagnetic and transport properties of multiferroic MnSe2/Al2S3 van der Waals heterostructures

Two-dimensional (2D) multiferroic van der Waals (vdW) heterostructures, combining ferroelectricity and ferromagnetism, offer unprecedented opportunities for next-generation spintronic and memory devices. However, achieving strong magnetoelectric coupling and room-temperature stability remains a significant challenge. Here, we investigate the polarization-mediated electromagnetic and transport properties of the MnSe₂/Al₂S₃ vdW heterostructure using first-principles density functional theory calculations. Our results demonstrate robust perpendicular magnetic anisotropy and electrically tunable interfacial charge transfer, enabling reversible switching between Schottky-barrier-limited and metallic conduction regimes. Remarkably, the ferroelectric polarization reversal in Al₂S₃ induces a substantial tunneling electroresistance (TER) effect, with a ratio reaching 3.18 × 10³ %, highlighting its potential for non-volatile memory applications. Furthermore, the system exhibits enhanced thermal stability, with Curie temperatures of ∼203 K and ∼153 K under up polarized and down polarized states, surpassing those of many 2D ferromagnetic materials. These findings establish the MnSe₂/Al₂S₃ heterostructure as a promising platform for multifunctional spintronic devices, providing critical insights into the design of high-performance, energy-efficient nanoelectronics through interfacial magnetoelectric coupling.