Current Applied Physics最新文献

{"title":"Improvement of optoelectrical properties of silicon heterojunction solar cells by using ITO/SiOx DLARC with NH3 plasma treatment","authors":"Seok Jin Jang ,&nbsp;Muhammad Quddamah Khokhar ,&nbsp;Hasnain Yousuf ,&nbsp;Alamgeer ,&nbsp;Junhan Bae ,&nbsp;Yeojin Jeong ,&nbsp;Yunhui Jang ,&nbsp;Youngkuk Kim ,&nbsp;Sangheon Park ,&nbsp;Woo Kyoung Kim ,&nbsp;Junsin Yi","doi":"10.1016/j.cap.2025.09.001","DOIUrl":"10.1016/j.cap.2025.09.001","url":null,"abstract":"<div><div>Silicon heterojunction (SHJ) solar cells have attracted significant interest due to their high efficiency and low temperature coefficient. Anti-reflective coating (ARC) is used to increase light absorption and short circuit current density (<em>J</em>_<em>sc</em><em>)</em> of SHJ solar cell. Indium Tin Oixde (ITO) is commonly used ARC coating for SHJ solar cell because ITO has high conductivity and low resistance properties. To enhance the characteristics of the ARC, an additional transparent electrode with a lower refractive index than ITO was deposited. This increases the amount of light refracted into the solar cell, allowing for greater light absorption. This study focuses on enhancing the optical and electrical properties and J_sc by improving the ITO layer and ITO/SiO_x double layer ARC on the solar cell. Since SiO_x has low moisture stability and a refractive index is lower than 1.5, it is difficult to use it directly in solar cells. Therefore, NH₃ plasma post-treatment was applied to develop an ARC suitable for solar cell applications. Using RF/DC power sputtering for ITO and plasma enhanced chemical vapor deposition (PECVD) for SiO_x to make Double Layer of Antireflective coating (DLARC) and NH₃ plasma treatment. This structure increased transmittance from 86.73 % to 89.6 % between 300 and 1100 nm spectrum. This resulted in a higher <em>J</em>_<em>sc</em> of 39.85 mA/cm² and a conversion efficiency of 21.8 %. Both simulations and experiments demonstrated that ITO/SiO_x DLARC with NH₃ plasm post treatment structure offers superior anti-reflection properties compared to single-layer ITO coatings.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 72-81"},"PeriodicalIF":3.1,"publicationDate":"2025-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145043928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bipolar resistive switching characteristics of silver doped tin sulphide based ReRAM devices","authors":"Neju Mathew Philip,&nbsp;M.C. Santhosh Kumar","doi":"10.1016/j.cap.2025.08.013","DOIUrl":"10.1016/j.cap.2025.08.013","url":null,"abstract":"<div><div>In the present work, silver doped tin sulphide (SnS:Ag) thin films are deposited using the vacuum thermal evaporation over stainless steel (SS 304) substrates. X-ray diffraction studies and Raman analysis confirmed the formation of orthorhombic SnS without any impurity phases. FE-SEM analysis revealed a coral reef-like morphology for the deposited SnS:Ag thin films. EDS studies revealed tin-rich SnS:Ag thin films. The resistive memory switching characteristics of the fabricated SS/SnS:Ag/Ag ReRAM device is analysed and the On/Off ratio of the device is obtained as 40.7. The SS/SnS:Ag/Ag device has good endurance over 100 cycles and retention over 10⁴ s. The creation and dissolution of conductive filaments of silver and sulphur ions through the tin vacancies is the possible conduction mechanism behind the memory switching property of the fabricated SS/SnS:Ag/Ag memory device.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 37-42"},"PeriodicalIF":3.1,"publicationDate":"2025-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144921988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Arecanut organic residue-enhanced polymer films: An efficient catalyst for amidation reactions","authors":"Jasmine Jose ,&nbsp;Binish C J ,&nbsp;Jobish Johns ,&nbsp;Sony J. Chundattu ,&nbsp;Vijayasankar A V","doi":"10.1016/j.cap.2025.08.012","DOIUrl":"10.1016/j.cap.2025.08.012","url":null,"abstract":"<div><div>This research introduces an innovative approach to repurpose agricultural by-products as catalysts in chemical synthesis, addressing waste disposal challenges. Composite films were developed using arecanut organic residue, an underexploited by-product, blended with polyvinyl alcohol (PVA) and chitosan. The films were synthesized through solvent casting and thermal curing, with experimental parameters systematically optimized. Physicochemical characterization confirmed successful integration of components and revealed structural properties. The catalytic efficiency of the films was evaluated in amide synthesis, a key reaction in pharmaceuticals. A blend of 1.5 g PVA, 0.3 g chitosan, and 1 mL arecanut residue achieved a 95 % yield in ester-amine reactions, attributed to synergistic interactions between the polymer matrix and reactive sites. The films exhibited excellent reusability, maintaining catalytic efficiency over three cycles. This study highlights the potential of arecanut residue-based composites as sustainable, efficient catalysts for industrially relevant transformations.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 43-50"},"PeriodicalIF":3.1,"publicationDate":"2025-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144996555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Self-cleaning properties of sol-gel spin-coated In2O3 thin films with varying molarity","authors":"Lanusubo Walling ,&nbsp;P. Chinnamuthu ,&nbsp;J.P. Borah ,&nbsp;A. Elayaperumal ,&nbsp;Salam Jimkeli Singh","doi":"10.1016/j.cap.2025.08.011","DOIUrl":"10.1016/j.cap.2025.08.011","url":null,"abstract":"<div><div>Indium oxide (In₂O₃) thin films were synthesized using the sol-gel spin-coating method with precursor concentrations of 0.15 M, 0.25 M, and 0.55 M, tailored for self-cleaning applications. The UV–Vis absorption spectra showed a strong absorption edge around 300 nm, with absorption intensity increasing from 0.15 M to 0.25 M and then slightly decreasing at 0.55 M. This indicates that 0.25 M film offers better light absorption. Wettability analysis revealed a decrease in water contact angle with increasing molarity: 60.2°, 41.6°and 27.1° for 0.15 M, 0.25 M and 0.55 M, respectively. Upon UV illumination, the contact angle further decreased to 42.2°, 31.3°and 23.1° confirming photo-induced hydrophilicity. This trend suggests that higher molarity films promote better water spreading, which is beneficial for self-cleaning applications. These characteristics establish In₂O₃ thin films as promising materials for water-based self-cleaning applications, demonstrating their potential in environmental remediation and surface maintenance technologies.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 17-25"},"PeriodicalIF":3.1,"publicationDate":"2025-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144911718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-performance PVDF-HFP/ZnO/SrFe12O19 nanogenerators with enhanced dielectric, ferroelectric, and magnetoelectric coupling for powering low-power electronics","authors":"Sobi K. Chacko ,&nbsp;Raneesh Balakrishnan ,&nbsp;B.S. Athira ,&nbsp;Achu Chandran","doi":"10.1016/j.cap.2025.08.010","DOIUrl":"10.1016/j.cap.2025.08.010","url":null,"abstract":"<div><div>The rapid expansion of wearable and portable electronics necessitates the development of sustainable, self-powered energy solutions. Herein, we report a high-performance, lead-free piezoelectric nanogenerator (PENG) based on electrospun fiber mats of a ternary composite comprising poly (vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) embedded with ZnO and SrFe₁₂O₁₉ (SFO) nanoparticles. The synergistic interaction between the electroactive polymer matrix and multifunctional fillers significantly enhanced the β-phase content, resulting in superior dielectric and ferroelectric behaviour. Furthermore, the incorporation of magnetic SFO nanoparticles induced magnetoelectric coupling, with the optimised composite exhibiting a magnetoelectric coupling coefficient of 25 mV/cm·Oe. The resulting PENG delivered a fourfold enhancement in open-circuit voltage (20 V_pp) compared to pristine PVDF-HFP (5 V_pp), under low mechanical excitation. The device efficiently powered low-energy electronics and charged capacitors through simple biomechanical motions, highlighting its promise for next-generation energy harvesting in flexible and wearable electronics.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 26-36"},"PeriodicalIF":3.1,"publicationDate":"2025-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144920080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A novel 2T0C DRAM architecture using feedback field-effect transistors for reliability improvement","authors":"Dahee Jin ,&nbsp;So Won Son ,&nbsp;Woojoo Lee ,&nbsp;Seongjae Cho ,&nbsp;Il Hwan Cho","doi":"10.1016/j.cap.2025.08.006","DOIUrl":"10.1016/j.cap.2025.08.006","url":null,"abstract":"<div><div>Scaling challenges of conventional one-transistor one-capacitor (1T1C) dynamic random-access memory (DRAM), such as increased refresh power consumption and the manufacturing complexities of high-aspect-ratio capacitors, have highlighted the need for alternative memory architectures. This work introduces a novel two-transistor (2T) DRAM architecture employing a feedback field-effect transistor (FBFET) as the read transistor in the memory cell. By eliminating the need for a charge-storage capacitor, the 2T structure effectively addresses scalability limitations. The positive feedback mechanism instrinsically expected in a FBFET enables a high ON/OFF current ratio, rapid switching, and stable read operations without requiring additional voltage sources. Through a series of Sentaurus technology computer-aided design (TCAD) simulations, the proposed 2T DRAM cell demonstrated significant improvements in retention time, storage node voltage stability, and read current accuracy compared with previous 2T DRAM cells composed of only metal-oxide-semiconductor field-effect transistors (MOSFETs). The influence of critical parameters including write bitline voltage (V_WBL) and channel length (L_CH) have been systematically analyzed. The results show that a shorter channel length enhances the positive feedback, while longer one degrades retention time due to elevation of energy barrier. Furthermore, the impact of the read transistor's gate oxide thickness has also been evaluated. Thicker oxide layers weaken gate control over the channel, leading to faster voltage decay at the storage node (SN) and reduced read current. The proposed 2T DRAM cell design achieves superior data retention, reduced refresh dependency, and enhanced energy efficiency, overcoming the limitations of conventional DRAM cell. These findings underscore the potential of the FBFET-embedded 2T DRAM cell for the next-generation memory applications in the data storage and hardware-oriented artificial intelligence (AI) chips.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 9-16"},"PeriodicalIF":3.1,"publicationDate":"2025-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144891936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advanced AlN/SiO2/AlN multilayer coatings for protecting gold-like decorative surfaces: Improved hardness and color stability","authors":"Sitanan Raengroeng ,&nbsp;Nattharika Theekhasuk ,&nbsp;Aparporn Sakulkalavek ,&nbsp;Rachsak Sakdanuphab ,&nbsp;Nuttakrit Somdock","doi":"10.1016/j.cap.2025.08.009","DOIUrl":"10.1016/j.cap.2025.08.009","url":null,"abstract":"<div><div>This study explores the development of multilayer AlN/SiO₂/AlN thin film coatings to enhance tarnish resistance, surface hardness, and color stability of gold-coated silver substrates for decorative use. Gold films were deposited via electroplating, followed by multilayer coatings using reactive magnetron sputtering. The SiO₂ thickness was systematically varied while maintaining fixed AlN layers. Optical evaluations using CIE Lab parameters confirmed that the specimen with a 110-min SiO₂ layer exhibited acceptable color difference (ΔE &lt; 5). X-ray photoelectron spectroscopy (XPS) revealed stable Al–N and Si–O bonds with minimal oxidation. Nanoindentation tests showed a significant hardness increase, reaching 7.02 ± 0.62 GPa. After 240 days of ambient exposure, multilayer-coated samples showed no visible discoloration or sulfur-induced degradation, unlike uncoated and electrochemically coated samples. These results confirm that AlN/SiO₂/AlN multilayers effectively improve the durability and aesthetic stability of gold-like surfaces, offering a promising solution for long-term decorative applications.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 1-8"},"PeriodicalIF":3.1,"publicationDate":"2025-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144865342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of lithium fluoride buffer layer on contact interface engineering in a–IGZO TFTs","authors":"Donghyun Kim ,&nbsp;Hyunsoo Park ,&nbsp;Moonsoo Kim ,&nbsp;Dongbhin Kim ,&nbsp;Kyeong-Bae Lee ,&nbsp;Jong-Hyuk Choi ,&nbsp;Byoungdeog Choi","doi":"10.1016/j.cap.2025.08.007","DOIUrl":"10.1016/j.cap.2025.08.007","url":null,"abstract":"<div><div>This study investigates the impact of the lithium fluoride (LiF) buffer layer on the electrical properties and reliability of amorphous indium gallium zinc oxide (a–IGZO) thin-film transistors. Ultraviolet photoelectron and ultraviolet–visible spectroscopy analyzed changes in the effective work function and Schottky barrier height. Electrical measurements show that the 1 nm LiF layer reduces contact resistance and improves carrier injection, while thicker layers (&gt;2 nm) degrade performance by reducing tunneling probability. Reliability tests, including negative bias stress (NBS), positive bias stress (PBS), negative bias illumination stress (NBIS), and positive bias temperature stress (PBTS), demonstrated improved threshold voltage stability due to fluorine passivation of oxygen vacancies, attributed to fluorine from the LiF layer during thermal processing. X-ray photoelectron spectroscopy confirmed this chemical modification. The 1 nm LiF layer reduced contact resistance by over 30 %, increased mobility to 12.28 cm²/V·s, and significantly suppressed NBIS-induced threshold voltage shifts from −9.4 V to −2 V.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"79 ","pages":"Pages 96-103"},"PeriodicalIF":3.1,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144861262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Budget-friendly nanofabrication: Porous structures from high voltage DC and chemical etching","authors":"S.E. García ,&nbsp;M.A. Salguero Salas ,&nbsp;D.M. Arciniegas Jaimes ,&nbsp;M.I. Broens ,&nbsp;S.M. Molina ,&nbsp;E.A. Romero ,&nbsp;O.E. Linarez Pérez ,&nbsp;V.C. Fuertes ,&nbsp;N. Bajales","doi":"10.1016/j.cap.2025.08.008","DOIUrl":"10.1016/j.cap.2025.08.008","url":null,"abstract":"<div><div>Anodic materials provide a versatile platform for nanotechnological developments due to their customizable properties. Our work presents a cost-effective, user-friendly approach for fabricating high-quality anodic materials through hard anodization (HA), which is one of the most widely used techniques for efficiently fabricating anodic aluminum oxide (AAO) platforms in short times by applying high voltage. We developed a configurable power supply with a simple topology that can reach up to 190 V, which management was achieved by a basic processor board. In addition, we implemented a monitoring system for acquiring process anodization parameters. This approach significantly reduces the cost barrier associated with traditional methods, like induction-based power supplies. To demonstrate the effectiveness of our strategic experimental setup, we have successfully fabricated AAO templates to be used as substrates for surface-enhanced Raman spectroscopy (SERS). Thus, our low-cost modular friendly experimental setup offers a promising avenue for creating well-defined nanostructures with broad applications in nanotechnology.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"79 ","pages":"Pages 104-111"},"PeriodicalIF":3.1,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144866548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multifunctional terahertz device optimized based on particle swarm optimization algorithm","authors":"Qianli Song ,&nbsp;Yongjia Yang ,&nbsp;Zao Yi ,&nbsp;Hao Chen ,&nbsp;Zigang Zhou ,&nbsp;Hua Yang ,&nbsp;Junqiao Wang ,&nbsp;Boxun Li ,&nbsp;Chaojun Tang ,&nbsp;Fan Gao","doi":"10.1016/j.cap.2025.08.005","DOIUrl":"10.1016/j.cap.2025.08.005","url":null,"abstract":"<div><div>In order to expand the application scenarios of terahertz(THz) devices, we have designed a THz multifunctional device consisting of an electrically tunable graphene metamaterial in the top layer, silicon dioxide in the middle layer, and vanadium dioxide (VO₂), a phase change material, in the bottom layer. Particle Swarm Optimization (PSO) is used to optimize the structure of the multifunctional device. After several iterations, the ideal values of structural parameters were determined as <em>h</em>_<em>1</em> = 6.35 μm, <em>w</em> = 3.93 μm, <em>R</em> = 5.00 μm and <em>L</em> = 21.97 μm. The device is a graphene-dielectric-metal structure when vanadium dioxide is in the metallic state, and the absorbing layer is a graphene layer at this time. The simulation results show that the devices achieves 99.94 % and 99.98 % complete absorption at 3.805 THz and 4.15 THz, with Q values of 37.04 and 36.09, respectively, and is highly sensitive to the environmental refractive index, with a sensing sensitivity as high as 1210 GHz/RIU. When vanadium dioxide is in the insulating state, the device realizes the plasmon-induced transparency effect and has excellent slow light performance, and the group delay is 30.71 ps. In a word, the design of this paper will provide more ideas for the research of new devices such as terahertz detectors, terahertz astronomical observation equipment and THz spectrometers.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"79 ","pages":"Pages 88-95"},"PeriodicalIF":3.1,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144852765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}