Chayuan Zeng , liwen Fan , Sen Zhang , Jiasheng Wang , Tianqi Cheng , Wanqian Wang , Fei Xie , Wei Luo , Gang Peng
{"title":"A facile planar memristor based on CsBi4Te6 with asymmetric metal contacts","authors":"Chayuan Zeng , liwen Fan , Sen Zhang , Jiasheng Wang , Tianqi Cheng , Wanqian Wang , Fei Xie , Wei Luo , Gang Peng","doi":"10.1016/j.cap.2025.04.003","DOIUrl":null,"url":null,"abstract":"<div><div>A facile planar memristor was fabricated by choosing CsBi<sub>4</sub>Te<sub>6</sub> (CBT) contacted with handmade asymmetric electrodes for the first time. Utilizing simple methods such as dispensing silver (Ag) paste and pressing indium (In) significantly streamline the electrode fabrication process. The planar memristor displays stable bipolar resistive switching (RS) capabilities over 100 cycles. the resistance ratio (<em>R</em><sub>OFF</sub>/<em>R</em><sub>ON</sub>) surpasses 10<sup>3</sup>, and its retention time at ambient temperature exceeds 10<sup>4</sup> s. Comparative experiments reveal that the memristor behavior stems from the interface between CBT and Ag, with the possibility of a thin functional layer forming at the contact interface. Furthermore, characterizations at lower temperatures confirm the occurrence of carrier tunneling at the interface, which offers a fresh perspective and insight into the memristor.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"74 ","pages":"Pages 61-66"},"PeriodicalIF":2.4000,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Current Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1567173925000793","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
A facile planar memristor was fabricated by choosing CsBi4Te6 (CBT) contacted with handmade asymmetric electrodes for the first time. Utilizing simple methods such as dispensing silver (Ag) paste and pressing indium (In) significantly streamline the electrode fabrication process. The planar memristor displays stable bipolar resistive switching (RS) capabilities over 100 cycles. the resistance ratio (ROFF/RON) surpasses 103, and its retention time at ambient temperature exceeds 104 s. Comparative experiments reveal that the memristor behavior stems from the interface between CBT and Ag, with the possibility of a thin functional layer forming at the contact interface. Furthermore, characterizations at lower temperatures confirm the occurrence of carrier tunneling at the interface, which offers a fresh perspective and insight into the memristor.
期刊介绍:
Current Applied Physics (Curr. Appl. Phys.) is a monthly published international journal covering all the fields of applied science investigating the physics of the advanced materials for future applications.
Other areas covered: Experimental and theoretical aspects of advanced materials and devices dealing with synthesis or structural chemistry, physical and electronic properties, photonics, engineering applications, and uniquely pertinent measurement or analytical techniques.
Current Applied Physics, published since 2001, covers physics, chemistry and materials science, including bio-materials, with their engineering aspects. It is a truly interdisciplinary journal opening a forum for scientists of all related fields, a unique point of the journal discriminating it from other worldwide and/or Pacific Rim applied physics journals.
Regular research papers, letters and review articles with contents meeting the scope of the journal will be considered for publication after peer review.
The Journal is owned by the Korean Physical Society.