Se Eun Kim , Ju Young Sung , Yewon Yun, Byeongjun Jeon, Sang Mo Moon, Han Bin Lee, Chae Hyun Lee, Hae Jun Jung, Jae-Ung Lee, Sang Woon Lee
{"title":"Atomic layer deposition of high-k and metal thin films for high-performance DRAM capacitors: A brief review","authors":"Se Eun Kim , Ju Young Sung , Yewon Yun, Byeongjun Jeon, Sang Mo Moon, Han Bin Lee, Chae Hyun Lee, Hae Jun Jung, Jae-Ung Lee, Sang Woon Lee","doi":"10.1016/j.cap.2024.05.011","DOIUrl":"https://doi.org/10.1016/j.cap.2024.05.011","url":null,"abstract":"<div><p>Dynamic random-access memories (DRAMs) are used as core memories in current computing methods based on the Von Neumann architecture. The DRAM demand continuously increases because of the increased amount of data and need for artificial intelligence computing. DRAM consists of one transistor and one capacitor. Data are stored in the capacitor representing “0” and “1”. DRAM capacitors are composed of metal–insulator–metal thin films. In this review, we summarize experimental methods for development of high-<em>k</em> insulators and metal thin films for DRAM capacitors using the atomic layer deposition (ALD) process. Future research directions for the development of high-<em>k</em> and metal thin films and their ALD processes are addressed for next-generation DRAMs.</p></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140918502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Heavy elemental compound addition enhancing thermoelectric performance of Chromium Silicide synthesized by Spark plasma sintering","authors":"Manju Yadav , Naval Kishor Upadhyay , Kishor Kumar Johari , Radhey Shyam , Sanjay R. Dhakate , Bhasker Gahtori , Saravanan Muthiah","doi":"10.1016/j.cap.2024.05.009","DOIUrl":"https://doi.org/10.1016/j.cap.2024.05.009","url":null,"abstract":"<div><p>Silicide-based materials drive great potential in developing mid-temperature range thermoelectric generators (TEGs) applications. However, realizing the efficient and stable silicide materials is still a constraint for its real potential device applications. Chromium silicide will likely become p-type thermoelectric materials in this direction for thermoelectric power generation applications. However, high thermal conductivity values impede the figure-of-merit (<em>zT</em>). The present work adopts the chromium silicide, adding different weight percentages of well-known ZrCoSbSn compounds employing the compaction spark plasma sintering (SPS) technique. By adopting these combinations, the thermal conductivity is significantly reduced by enhanced scattering of heat-carrying phonons by multiple interfaces. Also, the maximum power factor value of ≃ 2.1 × 10<sup>−3</sup> W/mK<sup>2</sup> is achieved by employing a CrSi<sub>2</sub> -ZrCoSbSn compound addition. The enhanced figure-of-merit value (<em>zT</em>) ≃ 0.26 is realized in the temperature at 623 K for the CrSi<sub>2</sub>-5wt% ZrCoSbSn compound material.</p></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140950174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mamoon Ur Rashid , Sobia Ali Khan , Faisal Ghafoor , Jong-Seong Bae , Yun Chang Park , Muhammad Sheeraz , Zeeshan Tahir , Chinh Tam Le , Yong Soo Kim
{"title":"Role of Ti interfacial layer in the stability of TiO2 based transparent synaptic device","authors":"Mamoon Ur Rashid , Sobia Ali Khan , Faisal Ghafoor , Jong-Seong Bae , Yun Chang Park , Muhammad Sheeraz , Zeeshan Tahir , Chinh Tam Le , Yong Soo Kim","doi":"10.1016/j.cap.2024.05.005","DOIUrl":"https://doi.org/10.1016/j.cap.2024.05.005","url":null,"abstract":"<div><p>Interface engineering plays a pivotal role in manipulating the electrical transport and conduction mechanism of a synaptic device. In this work, the impact of Ti as an interfacial layer is systematically investigated by inserting ∼5 nm thin film at both interfaces of a functional layer (TiO<sub>2</sub>). Interestingly, it was observed that Ti layers significantly regulate the migration of oxygen ions/vacancies at the interfaces yielding an improved stability from 10 to 200 cycles, sustained over a longer period ∼8 × 10<sup>3</sup> s. Forming free and gradual transition in conductance on positive bias region under a controlled compliance current ∼0.3–17 mA demonstrates the multilevel switching highlighting the typical synaptic behavior of memristor. The ohmic conduction and space charge-limited current mechanism was found across the various resistive states signifies the trapping/de-trapping. Besides, other key parameters of synaptic device such as paired pulse facilitation, depression, and short-term memory together with the excellent transmittance in the visible spectral range makes our device adequate for innovative transparent neuromorphic applications.</p></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140947643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Waqas Shoukat , Muhammad Zahir Iqbal , Asma Khizar , Imran Murtaza , Shahid Alam , Rashid Ali , Saikh Mohammad Wabaidur , Mian Muhammad Faisal
{"title":"Investigating the influence of copper benzene-1,2-dicarboxylate (Cu-BDC) and benzene-1,3,5-tricarboxylate ligands (Cu-BTC) on the electrochemical capacity of hybrid supercapacitors","authors":"Waqas Shoukat , Muhammad Zahir Iqbal , Asma Khizar , Imran Murtaza , Shahid Alam , Rashid Ali , Saikh Mohammad Wabaidur , Mian Muhammad Faisal","doi":"10.1016/j.cap.2024.05.002","DOIUrl":"10.1016/j.cap.2024.05.002","url":null,"abstract":"<div><p>The elevated energy demand and crises have rooted the urge to develop advanced electrode materials that can overcome the energy dilemma present all over the globe. Metal-organic frameworks (MOFs) have emerged as promising electrode materials in recent times due to their better electrochemical properties. Herein the metal ligand synergy produced in MOFs is observed for the same metal center (Cu) with different ligands i.e., benzene-1,3,5-tricarboxylate (1,3,5-BTC) and benzene-1,2-dicarboxylate (1,2-BDC). The hybrid device of the best performing MOF (Cu-1,3,5-BTC//AC) reveals the energy and power density of 88.32 Wh kg<sup>−1</sup> and 680 W kg<sup>−1</sup>, respectively. Even at the highest current density of 15 A/g, the device retained the E<sub>s</sub> of 21.25 Wh kg<sup>−1</sup> and P<sub>s</sub> of 12,750 W kg<sup>−1</sup>. Furthermore, the semi-empirical approach was utilized for the evaluation of capacitive and diffusive contributions.</p></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141029219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tianyu Yu , Yunlei Jiang , Suxia Liang , Zhiguo Zhao , Sheng Zou , Jie Su , Renjie Hua , Cang Liang , Wangfan Chen , Mi Zhang , Wenjun Zhang , Lei Shi , Yuan Dong
{"title":"Effect of sputtering pressure on the properties of large area IWO thin films deposited by direct current magnetron sputtering","authors":"Tianyu Yu , Yunlei Jiang , Suxia Liang , Zhiguo Zhao , Sheng Zou , Jie Su , Renjie Hua , Cang Liang , Wangfan Chen , Mi Zhang , Wenjun Zhang , Lei Shi , Yuan Dong","doi":"10.1016/j.cap.2024.05.006","DOIUrl":"https://doi.org/10.1016/j.cap.2024.05.006","url":null,"abstract":"<div><p>Tungsten doped indium oxide (In<sub>2</sub>O<sub>3</sub>: W, IWO) thin films have been attracting increasing attention due to their excellent optoelectronic properties. Here, a series of IWO thin films were prepared using direct current (DC) magnetron sputtering method, by varying the sputtering pressure. Analysis revealed that the IWO films prepared under sputtering pressure of 0.4 Pa exhibited excellent optoelectronic performance, with low square resistance, resistivity, high carrier concentration and mobility. The resulting semi-transparent perovskite solar cells (ST-PSCs), with IWO fabricated under 0.4 Pa, yield a PCE of 15.71 % for the large area modules of 100 cm<sup>2</sup> (active area 64.8 cm<sup>2</sup>).</p></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140918503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Anza Farooq , Fatimah Mohammed A. Alzahrani , Norah Alomayrah , Alina Manzoor , Z.A. Alrowaili , M.S. Al-Buriahi , Imran Shakir , Mamoona Anwar , Muhammad Farooq Warsi
{"title":"Solar light driven enhanced photocatalytic efficiency of Graphene based composite of co-doped Bismuth Ferrite (Ba0.5 Bi0.5 Nd0.5 Fe1.5 O3/Gr0.375) for Crystal Violet and Paracetamol","authors":"Anza Farooq , Fatimah Mohammed A. Alzahrani , Norah Alomayrah , Alina Manzoor , Z.A. Alrowaili , M.S. Al-Buriahi , Imran Shakir , Mamoona Anwar , Muhammad Farooq Warsi","doi":"10.1016/j.cap.2024.05.004","DOIUrl":"https://doi.org/10.1016/j.cap.2024.05.004","url":null,"abstract":"<div><p>Different dyes and drugs used in industries when released without any treatment in water bodies cause water pollution. There is a need of synthesizing cost-effective and efficient photocatalyst for their degradation. Herein, Ba and Nd co-doped bismuth ferrite BFO (Ba<sub>0.5</sub> Bi<sub>0.5</sub> Nd<sub>0.5</sub> Fe<sub>1.5</sub> O<sub>3</sub>) and BFO@G (Ba<sub>0.5</sub> Bi<sub>0.5</sub> Nd<sub>0.5</sub> Fe<sub>1.5</sub> O<sub>3</sub>/Gr<sub>0.375</sub>) were successfully fabricated. X-ray Diffraction and Fourier Transform Infrared Spectroscopy were performed to confirm the synthesis of samples. Electrochemical measurements were carried out to further evaluate the characteristics of fabricated catalysts and R<sub>ct</sub> values of 3.90 Ω and 2.06 Ω were observed for BFO and BFO@G. BFO@G showed 72.72 % degradation of CV and 80.26 % of PC. The composite material showed enhanced performance due to the integration of graphene which provide additional conductive pathways and reduces the rate of electron-hole pair recombination. This research contributes valuable insights into the development of efficient photocatalytic materials for environmental applications<strong>.</strong></p></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140894833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lujia Cong , Huimin Zhao , Yurui Han , Shan Zhang , Chunyue Gao , Ziwen Cheng , Jiben Yang , Hongbin Wang
{"title":"Transparent, low dark current, fast response ultraviolet and short-wavelength blue photons photodetector based on Graphene/SrTiO3 single crystal","authors":"Lujia Cong , Huimin Zhao , Yurui Han , Shan Zhang , Chunyue Gao , Ziwen Cheng , Jiben Yang , Hongbin Wang","doi":"10.1016/j.cap.2024.05.001","DOIUrl":"https://doi.org/10.1016/j.cap.2024.05.001","url":null,"abstract":"<div><p>Ultraviolet light and short-wavelength blue photons (UV-SWB) can cause damage to the human body under excessive exposure. Strontium titanate (SrTiO<sub>3</sub>), which is a crucial perovskite oxide with a direct energy band gap of ∼3.2 eV, has great potential for UV-SWB photodetection. In this work, UV-SWB photodetector with high transparency based on Graphene/SrTiO<sub>3</sub> heterojunction was fabricated by graphene transfer method. The Graphene/SrTiO<sub>3</sub> photodetector exhibits an ultra-low dark current of 6 pA at a 30 V bias. The response spectrum of the Graphene/SrTiO<sub>3</sub> photodetector was 220–410 nm, covering the UV-SWB band. Under 385 nm light irradiation, the photodetector exhibits a response of 3.4 mA/W, a detectivity of 1.5 × 10<sup>10</sup> Jones, a response time of 186 ms, and a light-to-dark current ratio of 10<sup>3</sup> magnitude at a 30 V bias. In addition, the transmittance of the photodetector in the visible light band reaches 80 %, which has excellent visualization performance. The excellent performance of Graphene/SrTiO<sub>3</sub> photodetector is attributed to the high crystal quality of SrTiO<sub>3</sub> wafer and the van der Waals interface constructed by Graphene/SrTiO<sub>3</sub> reduces the bulk defect density and interfacial state density, which could be beneficial the separation and transport of photogenerated carriers in the active layer and heterojunction. This study has important reference value for the design and manufacture of UV-SWB photodetectors.</p></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140894778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Rapid YFeO3 gas sensor for detecting formaldehyde working at room temperature","authors":"Aerzigu. Xukeer , Jin Li","doi":"10.1016/j.cap.2024.05.003","DOIUrl":"https://doi.org/10.1016/j.cap.2024.05.003","url":null,"abstract":"<div><p>The YFeO<sub>3</sub> (12 h, 24 h, 48 h and 72 h) microcrystals were prepared by hydrothermal process. Structural characterization using X-ray diffraction confirms the orthorhombic perovskite of the synthesized materials. YFeO<sub>3</sub> based gas sensor has good selectivity to formaldehyde. The response value of YFeO<sub>3</sub> (72 h) sensor is up to 318 for 100 ppm formaldehyde at room temperature. Furthermore, YFeO<sub>3</sub> has an ultra-fast response-recovery time of about 6.3 s/0.9 s and exhibits excellent cycle repeatability and stability. This trait can play significant practical role in kind of sensors with real-time detectability. Further SEM and XPS analysis suggest that enhanced sensing property can be related to the uniform hierarchical structure and high oxygen vacancies. Our research indicates that adjusting the experimental approach can alter the structural and sensing properties of the sample.</p></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140880171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"First-principles study of the thickness-dependent shift current in γ-GeSe thin layers","authors":"Ikpyeong Park, Jeongwoo Kim","doi":"10.1016/j.cap.2024.04.010","DOIUrl":"https://doi.org/10.1016/j.cap.2024.04.010","url":null,"abstract":"<div><p>We investigate the stable structure and optoelectronic properties of thin γ-GeSe layers through first-principles calculations. We examine three stacking configurations (A-A, A-B, and A-C) of adjacent quadruple layers (QLs), revealing the structural stability of A-C stacking. Due to broken inversion symmetry in atomically thin γ-GeSe layers, shift currents are generated, which are very sensitive to their stacking order and thickness. Despite similar optical absorption trends in A-B and A-C stackings, their shift current responses differ significantly. The shift current is notably decreased at odd-number stackings for all cases, attributed to opposite generated flows between the top and bottom surfaces. The analysis of orbital contributions reveals the charge shift's origin in γ-GeSe. We also explore mechanical modifications, such as sliding and strain, demonstrating the tunability of the shift current spectrum in γ-GeSe. This research enhances our understanding of the optoelectronic response in atomically thin materials, providing valuable insights for future applications.</p></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140818743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Fabrication perspective of Fe3O4-based cross-cell memristive device for synaptic applications","authors":"Vivek Pratap Singh , Chandra Prakash Singh , Harsh Ranjan , Gaurav Kumar , Jyoti Jaiswal , Saurabh Kumar Pandey","doi":"10.1016/j.cap.2024.04.008","DOIUrl":"https://doi.org/10.1016/j.cap.2024.04.008","url":null,"abstract":"<div><p>Neurotransmitter release in chemical synapses plays a pivotal role in a wide range of essential brain functions, including neural activity (potentiation/depression), learning, cognition, emotion, perception, and consciousness. In this study, we have presented the fabricated cross-cell memristive device that exhibits an analog resistive switching (ARS) device, with Silver (Ag) as active and Platinum (Pt) as inert metal electrodes. The energy bandgap, crystal structure, surface morphology, elemental composition, and electronic properties of the deposited metal-oxide thin film were examined by using UV–Vis spectroscopy, Glancing Angle X-ray diffraction (GAXRD), Field Emission Scanning Electron Microscopy (FESEM), Energy Dispersive X-ray (EDX), and Raman spectroscopy, respectively. The electrical characteristics of the fabricated resistive switching (RS) device have been studied by the Keithley 4200A SCS parameter analyzer by low triangular DC sweep voltage (-2V/+2V) at room temperature (RT). Furthermore, we have evaluated the outstanding performance of the fabricated cross-cell RS device at a read voltage of 0.1V, and we have also discussed its remarkable linearity. This work will aid researchers in realizing the synaptic behavior of cross-cell devices for neuromorphic computing applications.</p></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2024-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140813271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}