Current Applied Physics最新文献_第10页

Two-level system loss characterization of NbTi superconducting resonators on Si/SiO2 substrates Si/SiO2衬底NbTi超导谐振器的双能级系统损耗特性

IF 3.1 4区物理与天体物理

Current Applied Physics Pub Date : 2025-12-01 Epub Date: 2025-10-18 DOI: 10.1016/j.cap.2025.10.010

Bongkeon Kim, Yong-Joo Doh

引用次数: 0

Self-cleaning properties of sol-gel spin-coated In2O3 thin films with varying molarity 不同摩尔浓度的溶胶-凝胶自旋涂覆In2O3薄膜的自清洁性能

IF 3.1 4区物理与天体物理

Current Applied Physics Pub Date : 2025-12-01 Epub Date: 2025-08-26 DOI: 10.1016/j.cap.2025.08.011

Lanusubo Walling , P. Chinnamuthu , J.P. Borah , A. Elayaperumal , Salam Jimkeli Singh

{"title":"Self-cleaning properties of sol-gel spin-coated In2O3 thin films with varying molarity","authors":"Lanusubo Walling , P. Chinnamuthu , J.P. Borah , A. Elayaperumal , Salam Jimkeli Singh","doi":"10.1016/j.cap.2025.08.011","DOIUrl":"10.1016/j.cap.2025.08.011","url":null,"abstract":"<div><div>Indium oxide (In<sub>2</sub>O<sub>3</sub>) thin films were synthesized using the sol-gel spin-coating method with precursor concentrations of 0.15 M, 0.25 M, and 0.55 M, tailored for self-cleaning applications. The UV–Vis absorption spectra showed a strong absorption edge around 300 nm, with absorption intensity increasing from 0.15 M to 0.25 M and then slightly decreasing at 0.55 M. This indicates that 0.25 M film offers better light absorption. Wettability analysis revealed a decrease in water contact angle with increasing molarity: 60.2°, 41.6°and 27.1° for 0.15 M, 0.25 M and 0.55 M, respectively. Upon UV illumination, the contact angle further decreased to 42.2°, 31.3°and 23.1° confirming photo-induced hydrophilicity. This trend suggests that higher molarity films promote better water spreading, which is beneficial for self-cleaning applications. These characteristics establish In<sub>2</sub>O<sub>3</sub> thin films as promising materials for water-based self-cleaning applications, demonstrating their potential in environmental remediation and surface maintenance technologies.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 17-25"},"PeriodicalIF":3.1,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144911718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Polarization-mediated electromagnetic and transport properties of multiferroic MnSe2/Al2S3 van der Waals heterostructures 多铁MnSe2/Al2S3范德华异质结构极化介导的电磁和输运性质

IF 3.1 4区物理与天体物理

Current Applied Physics Pub Date : 2025-12-01 Epub Date: 2025-09-24 DOI: 10.1016/j.cap.2025.09.022

Liyan Li , Daifeng Zou , Weiyao Jia , Shuhong Xie

{"title":"Polarization-mediated electromagnetic and transport properties of multiferroic MnSe2/Al2S3 van der Waals heterostructures","authors":"Liyan Li , Daifeng Zou , Weiyao Jia , Shuhong Xie","doi":"10.1016/j.cap.2025.09.022","DOIUrl":"10.1016/j.cap.2025.09.022","url":null,"abstract":"<div><div>Two-dimensional (2D) multiferroic van der Waals (vdW) heterostructures, combining ferroelectricity and ferromagnetism, offer unprecedented opportunities for next-generation spintronic and memory devices. However, achieving strong magnetoelectric coupling and room-temperature stability remains a significant challenge. Here, we investigate the polarization-mediated electromagnetic and transport properties of the MnSe<sub>2</sub>/Al<sub>2</sub>S<sub>3</sub> vdW heterostructure using first-principles density functional theory calculations. Our results demonstrate robust perpendicular magnetic anisotropy and electrically tunable interfacial charge transfer, enabling reversible switching between Schottky-barrier-limited and metallic conduction regimes. Remarkably, the ferroelectric polarization reversal in Al<sub>2</sub>S<sub>3</sub> induces a substantial tunneling electroresistance (TER) effect, with a ratio reaching 3.18 × 10<sup>3</sup> %, highlighting its potential for non-volatile memory applications. Furthermore, the system exhibits enhanced thermal stability, with Curie temperatures of ∼203 K and ∼153 K under up polarized and down polarized states, surpassing those of many 2D ferromagnetic materials. These findings establish the MnSe<sub>2</sub>/Al<sub>2</sub>S<sub>3</sub> heterostructure as a promising platform for multifunctional spintronic devices, providing critical insights into the design of high-performance, energy-efficient nanoelectronics through interfacial magnetoelectric coupling.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 234-241"},"PeriodicalIF":3.1,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145154826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Flexible screen-printed graphene oxide-based biosensor for sweat sodium detection 用于汗液钠检测的柔性丝网印刷氧化石墨烯生物传感器

IF 3.1 4区物理与天体物理

Current Applied Physics Pub Date : 2025-12-01 Epub Date: 2025-09-15 DOI: 10.1016/j.cap.2025.09.010

L. Marini , P. Chithra Lekha , Roop L. Mahajan , T. Devasena

{"title":"Flexible screen-printed graphene oxide-based biosensor for sweat sodium detection","authors":"L. Marini , P. Chithra Lekha , Roop L. Mahajan , T. Devasena","doi":"10.1016/j.cap.2025.09.010","DOIUrl":"10.1016/j.cap.2025.09.010","url":null,"abstract":"<div><div>Sweat contains valuable biomarkers indicative of physiological health conditions such as electrolyte imbalance, stress, and disease, enabling continuous, non-invasive monitoring through miniaturized wearable electrochemical biosensors. Here, a flexible, cost-effective electrochemical sweat Na<sup>+</sup> ion sensor is fabricated using a screen-printing method on a flexible polyethylene terephthalate (PET) substrate. The sensor incorporates a low-cost Ion-Selective Layer (ISL) and graphene oxide (GO) enhancing sensitivity and electrochemical performance across a broad range of Na<sup>+</sup> ions. The sensor exhibits a high sensitivity of 1.213 mA/mM.cm<sup>2</sup>, low limit detection of 14.49 mM, and good stability. Real-time sweat analysis demonstrated Na<sup>+</sup> ion levels of 19 mM in the morning and 23 mM in the evening aligning with the analytical range of Na<sup>+</sup> ion concentration in sweat. This work addresses challenges in precision and individual variability in Na<sup>+</sup> ion concentration highlighting the potential of scalable, affordable sensors in wearables technology for personalized health monitoring.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 145-150"},"PeriodicalIF":3.1,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145105179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-performance PVDF-HFP/ZnO/SrFe12O19 nanogenerators with enhanced dielectric, ferroelectric, and magnetoelectric coupling for powering low-power electronics 高性能PVDF-HFP/ZnO/SrFe12O19纳米发电机具有增强的介电、铁电和磁电耦合，可为低功耗电子设备供电

IF 3.1 4区物理与天体物理

Current Applied Physics Pub Date : 2025-12-01 Epub Date: 2025-08-23 DOI: 10.1016/j.cap.2025.08.010

Sobi K. Chacko , Raneesh Balakrishnan , B.S. Athira , Achu Chandran

{"title":"High-performance PVDF-HFP/ZnO/SrFe12O19 nanogenerators with enhanced dielectric, ferroelectric, and magnetoelectric coupling for powering low-power electronics","authors":"Sobi K. Chacko , Raneesh Balakrishnan , B.S. Athira , Achu Chandran","doi":"10.1016/j.cap.2025.08.010","DOIUrl":"10.1016/j.cap.2025.08.010","url":null,"abstract":"<div><div>The rapid expansion of wearable and portable electronics necessitates the development of sustainable, self-powered energy solutions. Herein, we report a high-performance, lead-free piezoelectric nanogenerator (PENG) based on electrospun fiber mats of a ternary composite comprising poly (vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) embedded with ZnO and SrFe<sub>12</sub>O<sub>19</sub> (SFO) nanoparticles. The synergistic interaction between the electroactive polymer matrix and multifunctional fillers significantly enhanced the β-phase content, resulting in superior dielectric and ferroelectric behaviour. Furthermore, the incorporation of magnetic SFO nanoparticles induced magnetoelectric coupling, with the optimised composite exhibiting a magnetoelectric coupling coefficient of 25 mV/cm·Oe. The resulting PENG delivered a fourfold enhancement in open-circuit voltage (20 V<sub>pp</sub>) compared to pristine PVDF-HFP (5 V<sub>pp</sub>), under low mechanical excitation. The device efficiently powered low-energy electronics and charged capacitors through simple biomechanical motions, highlighting its promise for next-generation energy harvesting in flexible and wearable electronics.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 26-36"},"PeriodicalIF":3.1,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144920080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tuning growth parameter for the controlled synthesis of 2D WS2 二维WS2可控合成的生长参数调整

IF 3.1 4区物理与天体物理

Current Applied Physics Pub Date : 2025-12-01 Epub Date: 2025-09-22 DOI: 10.1016/j.cap.2025.09.018

Nishtha Sagta, Ajay Kumar Mishra

{"title":"Tuning growth parameter for the controlled synthesis of 2D WS2","authors":"Nishtha Sagta, Ajay Kumar Mishra","doi":"10.1016/j.cap.2025.09.018","DOIUrl":"10.1016/j.cap.2025.09.018","url":null,"abstract":"<div><div>The atmospheric pressure chemical vapor deposition (APCVD) synthesis of high-quality 2D WS<sub>2</sub> (tungsten disulfide) critically depends on the precise timing of sulfur vapor introduction. This study investigates the role of sulfur-rich environment and growth time on the surface morphology of 2D WS<sub>2</sub> films on the silicon substrate. Three different varying sets of parameters, designated as SP<sub>1</sub>, SP<sub>2</sub>, and SP<sub>3</sub>, were examined to optimize the time of sulfur vapor introduction. This process enabled the formation of large mono- and bi-layer triangular islands, with flake sizes ranging from ∼70 to 164 μm, as well as long few-layer structures. The atomically thin WS<sub>2</sub> exhibited strong photoluminescence (PL) at ∼1.93 eV, with a ∼70-fold enhancement and a full-width at half maximum (FWHM) of ∼12 nm. The optimized SP<sub>3</sub> parameters were applied using the sapphire substrate, and the results were consistent. Thus, this study highlights the crucial role of sulfur vapor synchronization in WS<sub>2</sub> synthesis, enabling control over their morphology, growth and size.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 182-193"},"PeriodicalIF":3.1,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145154828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Advanced AlN/SiO2/AlN multilayer coatings for protecting gold-like decorative surfaces: Improved hardness and color stability 先进的AlN/SiO2/AlN多层涂层，用于保护金色装饰表面：提高硬度和颜色稳定性

IF 3.1 4区物理与天体物理

Current Applied Physics Pub Date : 2025-12-01 Epub Date: 2025-08-19 DOI: 10.1016/j.cap.2025.08.009

Sitanan Raengroeng , Nattharika Theekhasuk , Aparporn Sakulkalavek , Rachsak Sakdanuphab , Nuttakrit Somdock

{"title":"Advanced AlN/SiO2/AlN multilayer coatings for protecting gold-like decorative surfaces: Improved hardness and color stability","authors":"Sitanan Raengroeng , Nattharika Theekhasuk , Aparporn Sakulkalavek , Rachsak Sakdanuphab , Nuttakrit Somdock","doi":"10.1016/j.cap.2025.08.009","DOIUrl":"10.1016/j.cap.2025.08.009","url":null,"abstract":"<div><div>This study explores the development of multilayer AlN/SiO<sub>2</sub>/AlN thin film coatings to enhance tarnish resistance, surface hardness, and color stability of gold-coated silver substrates for decorative use. Gold films were deposited via electroplating, followed by multilayer coatings using reactive magnetron sputtering. The SiO<sub>2</sub> thickness was systematically varied while maintaining fixed AlN layers. Optical evaluations using CIE Lab parameters confirmed that the specimen with a 110-min SiO<sub>2</sub> layer exhibited acceptable color difference (ΔE < 5). X-ray photoelectron spectroscopy (XPS) revealed stable Al–N and Si–O bonds with minimal oxidation. Nanoindentation tests showed a significant hardness increase, reaching 7.02 ± 0.62 GPa. After 240 days of ambient exposure, multilayer-coated samples showed no visible discoloration or sulfur-induced degradation, unlike uncoated and electrochemically coated samples. These results confirm that AlN/SiO<sub>2</sub>/AlN multilayers effectively improve the durability and aesthetic stability of gold-like surfaces, offering a promising solution for long-term decorative applications.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 1-8"},"PeriodicalIF":3.1,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144865342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Extremely low core-loss and enhanced permeability stability in hot press sintered FeSi soft magnetic composites by TiO2 and Fe nanopowders air gap filling 采用TiO2和Fe纳米粉末气隙填充热压烧结FeSi软磁复合材料，降低了磁芯损耗，提高了磁导率稳定性

IF 3.1 4区物理与天体物理

Current Applied Physics Pub Date : 2025-12-01 Epub Date: 2025-09-26 DOI: 10.1016/j.cap.2025.09.024

Muhammad Arif , Donghun Han , Won Chan Shin , Seunghun Cha , Young-Kwang Kim , Sang Woo Kim , Bo Wha Lee , Muhammad Awais , Dongwhi Choi , Jong-Soo Rhyee

{"title":"Extremely low core-loss and enhanced permeability stability in hot press sintered FeSi soft magnetic composites by TiO2 and Fe nanopowders air gap filling","authors":"Muhammad Arif , Donghun Han , Won Chan Shin , Seunghun Cha , Young-Kwang Kim , Sang Woo Kim , Bo Wha Lee , Muhammad Awais , Dongwhi Choi , Jong-Soo Rhyee","doi":"10.1016/j.cap.2025.09.024","DOIUrl":"10.1016/j.cap.2025.09.024","url":null,"abstract":"<div><div>Soft magnetic materials are essential components in applications of motors, generators, transformers, and many electronic devices. Here we present the improved soft magnetic properties in Fe-6.5 wt%Si/(TiO<sub>2</sub>:Fe)(nano powder; NP) soft magnetic composite (SMC) cores with varying concentrations of Fe nanopowders (0–4 wt%) synthesized by hot-press sintering. Increasing Fe nanopowder concentration significantly increases the density and electrical resistivity by filling the airgap and grain boundary scattering of carriers, respectively. Furthermore, adding Fe nanopowders leads to remarkably low coercivity (<15 Oe) and high saturation magnetization (189.5 emu/g). Notably, the FeSi/(TiO<sub>2</sub>:Fe)(NP) SMCs exhibited excellent soft magnetic characteristics, including high permeability with good frequency stability ranging from 0 to 1 MHz and ultra-low eddy current loss (8.16 kW/m<sup>3</sup> decreased by 83.47 %) at the 2 wt% doping concentration of Fe nanopowder. The composite with 3 wt% Fe nanopowder showed a significant decrease in hysteresis loss <em>P</em><sub>h</sub> with a minimum value of around 0.677 kW/m<sup>3</sup>. Therefore, the appropriate incorporation of Fe nanopowders, combined with the hot-press sintering technique, effectively reduces core loss, particularly eddy current loss, indicating that the Fe NP composites with FeSi matrix are highly promising for high-power and high-frequency electronic applications.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 242-249"},"PeriodicalIF":3.1,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145226939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Proton doping of graphene FETs enabled by ionic modulation from polysilazane dielectrics 质子掺杂石墨烯fet的离子调制从聚硅氮烷电介质

IF 3.1 4区物理与天体物理

Current Applied Physics Pub Date : 2025-12-01 Epub Date: 2025-10-16 DOI: 10.1016/j.cap.2025.10.006

Kyungmin Park, Garam Bae

{"title":"Proton doping of graphene FETs enabled by ionic modulation from polysilazane dielectrics","authors":"Kyungmin Park, Garam Bae","doi":"10.1016/j.cap.2025.10.006","DOIUrl":"10.1016/j.cap.2025.10.006","url":null,"abstract":"<div><div>Graphene field-effect transistors offer great potential for next-generation electronics due to graphene's high carrier mobility and atomic-scale thickness. However, stable device operation requires precise control of the dielectric interface, which impacts carrier transport and doping. In this study, we use solution-processed polysilazane (PSZ)-derived dielectrics as both gate insulators and active ionic environments for modulating graphene's electronic properties. The PSZ films, processed under humid conditions, generate hydroxyl-rich surfaces that serve as proton reservoirs. Electrical characterization and in-situ Raman spectroscopy show that gate bias induces proton doping of graphene, manifesting as hysteresis, Dirac point shifts, and D-band enhancement arising from phonon activation and interfacial Coulombic perturbations. The device also exhibits characteristic doping and relaxation times, revealing proton migration dynamics. Our findings suggest that PSZ dielectrics provide both gate insulation and dynamic electrochemical modulation of the graphene channel, offering a new strategy for dielectric interface engineering in 2D electronic devices.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 346-353"},"PeriodicalIF":3.1,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145358200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Precise analysis of electrical properties in MoS2 devices via H-TFSI ion reactions 通过H-TFSI离子反应精确分析MoS2器件的电学特性

IF 3.1 4区物理与天体物理

Current Applied Physics Pub Date : 2025-12-01 Epub Date: 2025-09-03 DOI: 10.1016/j.cap.2025.08.004

Hyunjin Ji

{"title":"Precise analysis of electrical properties in MoS2 devices via H-TFSI ion reactions","authors":"Hyunjin Ji","doi":"10.1016/j.cap.2025.08.004","DOIUrl":"10.1016/j.cap.2025.08.004","url":null,"abstract":"<div><div>The effectiveness of bistriflimide (H-TFSI) treatment and its reaction mechanisms for improving device performance in MoS<sub>2</sub> devices are investigated. The H-TFSI solution contains both H cations and TFSI anions, which interact with MoS<sub>2</sub> device. In monolayer MoS<sub>2</sub> FETs, H-TFSI reaction residues are adsorbed on the channel surface as p-doping agents and scattering centers, leading to performance degradation. In multilayer MoS<sub>2</sub> FETs, the centroid of the channel charge is located near the gate oxide, allowing the impact of H<sup>+</sup> ion reactions on device performance to be examined without the influence of surface-adsorbed H-TFSI residues. Electrical hysteresis analysis and low-frequency noise modeling were performed on two types of multilayer MoS<sub>2</sub> devices with the same structure, which exhibited contrasting outcomes―performance enhancement and degradation―following H-TFSI treatment. Additionally, comprehensive analysis, including the electrical property changes after H<sup>+</sup> insertion promotion and acetone rinsing, provides insights into the correlation between device performance variations and the underlying mechanisms.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"80 ","pages":"Pages 99-107"},"PeriodicalIF":3.1,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145043930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0