Strain-induced anisotropic effects on the electronic properties and dipole moment differences of Janus WSeTe

Strain engineering in Janus transition metal dichalcogenides (TMDCs) is a powerful approach for tuning electronic, optical, and mechanical properties. Using first-principles calculations, we explore the anisotropic effects of uniaxial and biaxial strains on the Janus TMDCs. Our results reveal that biaxial strain induces symmetric modifications, leading to uniform changes in the lattice constants and electronic band structures. However, uniaxial strain introduces anisotropy, with the structural and electronic responses depending on the strain direction. Under small uniaxial strain (8%), results in minimal differences between the zigzag and armchair directions, a higher strain (12%) leads to remarkable anisotropic effects. In this regime, the band structure and density of states (DOS) exhibit distinct variations along the two principal crystallographic directions, highlighting the directional dependence of strain-induced modifications. These findings provide insights into strain-induced anisotropy in Janus TMDCs and offer guidance for their application in nanoelectronic and optoelectronic devices.