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2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials最新文献

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Analysis of Integrated Starter-Generator Operation in the Starter Mode on a Mathematical Model 用数学模型分析起动机-发电机在起动模式下的综合运行
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292936
A. N. Reshetnikov
{"title":"Analysis of Integrated Starter-Generator Operation in the Starter Mode on a Mathematical Model","authors":"A. N. Reshetnikov","doi":"10.1109/SIBEDM.2007.4292936","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292936","url":null,"abstract":"New consumer requirements to modern cars have resulted in developing an integrated starter-generator. This multifunctional and multiconnected system is of great interest for commercial application. The integration of the internal combustion engine, the starter and the generator into a single power unit allows one to implement qualitatively a new concept of a car power unit with a substantial improvement of its ecological parameters. The results of this integrated starter-generator modelling in the starter mode in all ranges of speeds and initial conditions are given in this paper. The realization of the proposed control system is described on a mathematical model. The control algorithm has been verified by using the \"Matlab-Simulink\" software.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125857453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Optimization of the Control System of Parallel Connected Stabilized Constant-Voltage Power Supplies 并联稳压电源控制系统的优化
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292939
N. I. Borodin, A.I. Mitryashkina
{"title":"Optimization of the Control System of Parallel Connected Stabilized Constant-Voltage Power Supplies","authors":"N. I. Borodin, A.I. Mitryashkina","doi":"10.1109/SIBEDM.2007.4292939","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292939","url":null,"abstract":"A synthesis technique of the control system of parallel connected stabilized constant-voltage power supplies which have common load is proposed. The main idea is synthesis of additional current feedback loops, these loops are based on the own converter current and the current of other converter. This technique provides increase of common load voltage stability and maximum distribution equability of load current among power supplies. The following cases of applying this technique are reviewed: two, three and four parallel connected converters. All the possible control system structures are considered for each of these cases.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128768486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Technique of Define Limiting Parameters of Ultrasonic Electronic Generators 超声电子发生器极限参数的确定技术
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292982
V. Khmelev, R. Barsukov, S. N. Tsyganok, A. Shalunov
{"title":"Technique of Define Limiting Parameters of Ultrasonic Electronic Generators","authors":"V. Khmelev, R. Barsukov, S. N. Tsyganok, A. Shalunov","doi":"10.1109/SIBEDM.2007.4292982","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292982","url":null,"abstract":"In this article the model cavitation medium, submitted in single cavitation bubble is considered. The mathematical device connecting acoustic properties of cavitation environments with their initial properties, is submitted by parameters of a primary sound field. On the basis of the developed mathematical device the design procedure of define parameters of ultrasonic generators is offered.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126684163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Identification of Shallow Acceptors in Epitaxial GaN:Si 外延GaN:Si中浅层受体的鉴定
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292908
N. S. Korzhavina, T. Shamirzaev, C.S. Zhuravlev, V. Mansurov, A.U. Nikitin, A. Toropov
{"title":"Identification of Shallow Acceptors in Epitaxial GaN:Si","authors":"N. S. Korzhavina, T. Shamirzaev, C.S. Zhuravlev, V. Mansurov, A.U. Nikitin, A. Toropov","doi":"10.1109/SIBEDM.2007.4292908","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292908","url":null,"abstract":"Shallow acceptors in doping epitaxial layers GaN:Si has been studied. A doping concentration was specified by temperature of Si-dopant source (TSi). The chemical nature of the acceptors has been determinated by photoluminescence (PL) method. It is shown that a dominant acceptors in GaN:Si are background impurity Mg at TSi <1350degC and Si on N state at TSi =1400degC.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114697772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical and Optical Characteristics of ZnO:Er Films on Silicon Substrates 硅衬底上ZnO:Er薄膜的电学和光学特性
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292909
V. Malyutina-Bronskaya, V. Zalesski, T. R. Leonova, A. Mudryi
{"title":"Electrical and Optical Characteristics of ZnO:Er Films on Silicon Substrates","authors":"V. Malyutina-Bronskaya, V. Zalesski, T. R. Leonova, A. Mudryi","doi":"10.1109/SIBEDM.2007.4292909","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292909","url":null,"abstract":"Here we present results of the investigations of current-voltage characteristics, capacity-voltage characteristics and room temperature photoluminescence of ZnO:Er films on silicon, which were obtained by a reactive ion-plasma sputtering. It is shown, that the influence of annealing of ZnO:Er films on visual luminescence takes place.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127081495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Field Injection in Pb0.76Sn0.24 Te: in Films with Superimposed Magnetic Field 叠加磁场薄膜中Pb0.76Sn0.24 Te:的场注入
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292895
A. Klimov, V. Shumsky, V. S. Epov
{"title":"Field Injection in Pb0.76Sn0.24 Te: in Films with Superimposed Magnetic Field","authors":"A. Klimov, V. Shumsky, V. S. Epov","doi":"10.1109/SIBEDM.2007.4292895","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292895","url":null,"abstract":"In the present study, low-temperature electronic transport in Pb1-xSnxTe:In films with prevailing contact injection of charge carriers was examined. Data concerning the influence of magnetic field on the injection currents, and also on the transient currents observed following turn-on and turn-off of the field are reported. Possible mechanisms of observed phenomena are discussed.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127370434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electric Characteristics of Three Resonators Tunable Quasipolinomial Bandstop Filter on Lumped Elements 集总元件上三腔可调谐拟多项式带阻滤波器的电特性
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292953
E. Grigorjev, N. Ounrou
{"title":"Electric Characteristics of Three Resonators Tunable Quasipolinomial Bandstop Filter on Lumped Elements","authors":"E. Grigorjev, N. Ounrou","doi":"10.1109/SIBEDM.2007.4292953","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292953","url":null,"abstract":"In work the method of designing three resonators quasi-polynomial band-stop filter (QBSF) on lumped elements and its electric characteristics is submitted.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131535175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Case Development of a Heat Flux Sensor 热通量传感器的壳体研制
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292928
R. V. Lobach, O. V. Lobach, R. P. Dikareva
{"title":"The Case Development of a Heat Flux Sensor","authors":"R. V. Lobach, O. V. Lobach, R. P. Dikareva","doi":"10.1109/SIBEDM.2007.4292928","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292928","url":null,"abstract":"The thermal phenomena influence course of the majority of physical processes, therefore the control of thermal parameters represents huge practical interest, and rapid development of modern techniques demands from all metrological means, including from thermal measurement devices, more and more high accuracy and reliability. In turn development of such directions as the micromechanics and the micro system technology opens new opportunities before developers of measuring devices. On the basis of semiconductor materials, using the given technologies, it is possible to create the tiny heat flux sensors possessing high sensitivity and the low cost price. On faculty of semiconductor devices and microelectronics the silicon chip of a heat flux sensor has been developed, and also together with the Novosibirsk test set of sensitive elements (chips) has been produced.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114741043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High Power Ultrasonic Oscillatory Systems 高功率超声振荡系统
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292990
V. Khmelev, S. V. Levin, S. N. Tsyganok, A. Lebedev
{"title":"High Power Ultrasonic Oscillatory Systems","authors":"V. Khmelev, S. V. Levin, S. N. Tsyganok, A. Lebedev","doi":"10.1109/SIBEDM.2007.4292990","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292990","url":null,"abstract":"In paper the reasons limiting raise of productivity ultrasonic processes by increase of energy supplied into liquid technological medium of acoustic vibrations in a regime of developed cavitation are analysed. It is shown, that the solution of a problem is creation of special ultrasonic oscillatory systems with the increased surface radiation of multiresonant working tools. Creation of practical designs and research of their functionalities has allowed to confirm an opportunity of essential increase in power of ultrasonic technological apparatuses.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"211 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124741503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Research of an Opportunity of Use Thermistors Firms Honeywell in Multipurpose Devices for Reflexotherapy and Electroacupuncture Diagnostics 热敏电阻公司霍尼韦尔在反射疗法和电针诊断的多用途设备中的应用机会的研究
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292944
A. Kuzmin, I.M. Panfiljonok
{"title":"Research of an Opportunity of Use Thermistors Firms Honeywell in Multipurpose Devices for Reflexotherapy and Electroacupuncture Diagnostics","authors":"A. Kuzmin, I.M. Panfiljonok","doi":"10.1109/SIBEDM.2007.4292944","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292944","url":null,"abstract":"Opportunities of use thermoresistants in multipurpose devices for reflexotherapy and diagnostics are investigated. By authors it is developed BPP with use thermoresistants 701-102BAB-B00 firms Honeywell, supposing an arrangement of the several units providing certain kinds of physiotherapeutic influence for multipurpose reflexotherapy of the device, or several gauges for the diagnostic device. Researches of the developed block have shown applicability of this decision and conformity to shown requirements.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"281 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122941003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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