{"title":"Analysis of Integrated Starter-Generator Operation in the Starter Mode on a Mathematical Model","authors":"A. N. Reshetnikov","doi":"10.1109/SIBEDM.2007.4292936","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292936","url":null,"abstract":"New consumer requirements to modern cars have resulted in developing an integrated starter-generator. This multifunctional and multiconnected system is of great interest for commercial application. The integration of the internal combustion engine, the starter and the generator into a single power unit allows one to implement qualitatively a new concept of a car power unit with a substantial improvement of its ecological parameters. The results of this integrated starter-generator modelling in the starter mode in all ranges of speeds and initial conditions are given in this paper. The realization of the proposed control system is described on a mathematical model. The control algorithm has been verified by using the \"Matlab-Simulink\" software.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125857453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Optimization of the Control System of Parallel Connected Stabilized Constant-Voltage Power Supplies","authors":"N. I. Borodin, A.I. Mitryashkina","doi":"10.1109/SIBEDM.2007.4292939","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292939","url":null,"abstract":"A synthesis technique of the control system of parallel connected stabilized constant-voltage power supplies which have common load is proposed. The main idea is synthesis of additional current feedback loops, these loops are based on the own converter current and the current of other converter. This technique provides increase of common load voltage stability and maximum distribution equability of load current among power supplies. The following cases of applying this technique are reviewed: two, three and four parallel connected converters. All the possible control system structures are considered for each of these cases.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128768486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Khmelev, R. Barsukov, S. N. Tsyganok, A. Shalunov
{"title":"Technique of Define Limiting Parameters of Ultrasonic Electronic Generators","authors":"V. Khmelev, R. Barsukov, S. N. Tsyganok, A. Shalunov","doi":"10.1109/SIBEDM.2007.4292982","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292982","url":null,"abstract":"In this article the model cavitation medium, submitted in single cavitation bubble is considered. The mathematical device connecting acoustic properties of cavitation environments with their initial properties, is submitted by parameters of a primary sound field. On the basis of the developed mathematical device the design procedure of define parameters of ultrasonic generators is offered.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126684163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. S. Korzhavina, T. Shamirzaev, C.S. Zhuravlev, V. Mansurov, A.U. Nikitin, A. Toropov
{"title":"Identification of Shallow Acceptors in Epitaxial GaN:Si","authors":"N. S. Korzhavina, T. Shamirzaev, C.S. Zhuravlev, V. Mansurov, A.U. Nikitin, A. Toropov","doi":"10.1109/SIBEDM.2007.4292908","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292908","url":null,"abstract":"Shallow acceptors in doping epitaxial layers GaN:Si has been studied. A doping concentration was specified by temperature of Si-dopant source (TSi). The chemical nature of the acceptors has been determinated by photoluminescence (PL) method. It is shown that a dominant acceptors in GaN:Si are background impurity Mg at TSi <1350degC and Si on N state at TSi =1400degC.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114697772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Malyutina-Bronskaya, V. Zalesski, T. R. Leonova, A. Mudryi
{"title":"Electrical and Optical Characteristics of ZnO:Er Films on Silicon Substrates","authors":"V. Malyutina-Bronskaya, V. Zalesski, T. R. Leonova, A. Mudryi","doi":"10.1109/SIBEDM.2007.4292909","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292909","url":null,"abstract":"Here we present results of the investigations of current-voltage characteristics, capacity-voltage characteristics and room temperature photoluminescence of ZnO:Er films on silicon, which were obtained by a reactive ion-plasma sputtering. It is shown, that the influence of annealing of ZnO:Er films on visual luminescence takes place.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127081495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Field Injection in Pb0.76Sn0.24 Te: in Films with Superimposed Magnetic Field","authors":"A. Klimov, V. Shumsky, V. S. Epov","doi":"10.1109/SIBEDM.2007.4292895","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292895","url":null,"abstract":"In the present study, low-temperature electronic transport in Pb1-xSnxTe:In films with prevailing contact injection of charge carriers was examined. Data concerning the influence of magnetic field on the injection currents, and also on the transient currents observed following turn-on and turn-off of the field are reported. Possible mechanisms of observed phenomena are discussed.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127370434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electric Characteristics of Three Resonators Tunable Quasipolinomial Bandstop Filter on Lumped Elements","authors":"E. Grigorjev, N. Ounrou","doi":"10.1109/SIBEDM.2007.4292953","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292953","url":null,"abstract":"In work the method of designing three resonators quasi-polynomial band-stop filter (QBSF) on lumped elements and its electric characteristics is submitted.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131535175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. S. Cherkaev, E. A. Makarov, Y.I. Vorontsov, S. Kalinin
{"title":"Combined Method for Two-Dimensional Modeling of MOS-transistors Parameters","authors":"A. S. Cherkaev, E. A. Makarov, Y.I. Vorontsov, S. Kalinin","doi":"10.1109/SIBEDM.2007.4292923","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292923","url":null,"abstract":"New combined method for calibrating the parameters of 2D technological and electrophysical models of \"software package for two-dimensional process and device simulation - MicroTec-3.02\" was suggested in this paper. This calibrating is realized on basis of high-accuracy 1D doping profiles in the channel and source-drain areas of MOS-transistors which were calculated by \"FACT\" software package, as well as volt-ampere characteristics of researched devices, that were really measured.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133741687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The Case Development of a Heat Flux Sensor","authors":"R. V. Lobach, O. V. Lobach, R. P. Dikareva","doi":"10.1109/SIBEDM.2007.4292928","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292928","url":null,"abstract":"The thermal phenomena influence course of the majority of physical processes, therefore the control of thermal parameters represents huge practical interest, and rapid development of modern techniques demands from all metrological means, including from thermal measurement devices, more and more high accuracy and reliability. In turn development of such directions as the micromechanics and the micro system technology opens new opportunities before developers of measuring devices. On the basis of semiconductor materials, using the given technologies, it is possible to create the tiny heat flux sensors possessing high sensitivity and the low cost price. On faculty of semiconductor devices and microelectronics the silicon chip of a heat flux sensor has been developed, and also together with the Novosibirsk test set of sensitive elements (chips) has been produced.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114741043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Dmitriev, Y. G. Galitsyn, V. Mansurov, S.P. Moshenko, A. Toropov
{"title":"Nucleation in Homoepitaxy on ß-(2×4)(001) GaAs","authors":"D. Dmitriev, Y. G. Galitsyn, V. Mansurov, S.P. Moshenko, A. Toropov","doi":"10.1109/SIBEDM.2007.4292905","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292905","url":null,"abstract":"The analysis of experimental results on kinetics of the initial stage of growth on a surface beta-(2times4) (001)GaAs shows, that the process of growth starts from the adsorption of gallium atoms in a trenches of initial structure, i.e. phase transition beta-(2times4) - > alpha-(2x4)- nonrelaxed proceed, and then 2D-nucleus arise and epitaxial growth of a new layers of gallium arsenide continued.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122138425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}